vn05h high side smart power solid state relay january 2002 block diagram type v dss r ds(on )i out v cc vn05h 60 v 0.18 w 12 a 36 v n output current (continuous): 12a @ t c =25 o c n logic level 5v compatible input n thermal shut-down n under voltage shut-down n open drain diagnostic output n very low stand-by power dissipation description the vn05h is a monolithic devices made using sgs-thomson vertical intelligent power technology, intended for driving resistive or inductive loads with one side grounded. built-in thermal shut-down protects the chip from over temperature and short circuit. the input control is 5v logic level compatible. the open drain diagnostic output indicates open circuit (no load) and over temperature status. pentawatt (vertical) pentawatt (horizontal) order codes: pentawatt vertical vn05h pentawatt horizontal vn05h(011y) pentawatt in-line vn05h(012y) pentawatt (in-line) ? 1/10
absolute maximum rating symbol parameter value unit v (br)dss drain-source breakdown voltage 60 v i out output current (cont.) 12 a i r reverse output current -12 a i in input current 10 ma v cc supply voltage (continuous) 40 v v cc supply voltage (pulsed) 60 v -v cc reverse supply voltage -4 v i stat status current 10 ma v esd electrostatic discharge (1.5 k w , 100 pf) 2000 v p tot power dissipation at t c 25 o c 52 w t j junction operating temperature -40 to 150 o c t stg storage temperature -55 to 150 o c esb power mos avalanche energy 350 mj connection diagrams current and voltage conventions vn05h 2/10
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 2.4 62.5 o c/w o c/w electrical characteristics (v cc = 9 to 36 v; -40 t j 125 o c unless otherwise specified) power symbol parameter test conditions min. typ. max. unit v cc supply voltage see note 1 5.5 13 36 v r on on state resistance i out =6a i out =6a t j =25 o c 0.18 0.36 w w i s supply current off state t j 25 o c on state 50 15 m a ma switching symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time of output current i out = 6 a resistive load input rise time < 0.1 m st j =25 o c 15 m s t r rise time of output current i out = 6 a resistive load input rise time < 0.1 m st j =25 o c 30 m s t d(off) turn-off delay time o f output current i out = 6 a resistive load input rise time < 0.1 m st j =25 o c 20 m s t f fall time of output current i out = 6 a resistive load input rise time < 0.1 m st j =25 o c 10 m s (di/dt) on turn-on current slope i out =6a i out =i ov 25 t j 140 o c 0.5 2 a/ m s a/ m s (di/dt) off turn-off current slope i out =6a i out =i ov 25 t j 140 o c 2 4 a/ m s a/ m s v demag inductive load clamp voltage i out = 6 a l = 1 mh -7 -4 -2 v logic input symbol parameter test conditions min. typ. max. unit v il input low level voltage 0.8 v v ih input high level voltage 2(*)v v i(hyst.) input hysteresis voltage 0.5 v i in input current v in =5v 50 m a v icl input clamp voltage i in =10ma i in =-10ma 6 -0.7 v v vn05h 3/10
electrical characteristics (continued) protection and diagnostics symbol parameter test conditions min. typ. max. unit v stat ( ? ) status voltage output low i stat =1.6ma 0.4 v v usd under voltage shut down 5.5 v v scl ( ? )statusclampvoltage i stat =10ma i stat =-10ma 6 -0.7 v v i ov over current r load <10m w 20 a i av average current in short circuit r load <10m w t c =85 o c 1.4 a i ol open load current level 5 180 ma t tsd termal shut-down temperature 140 o c t r reset temperature 125 o c (*) the vih is internally clamped at 6v about. it is possible to connect thispin to an higher voltag e via an external resistor calculated to not exceed 10 ma at the input pin. ( ? ) status determinaion > 100 m s after the switching edge. note 1: above v cc = 36v the output voltage is clamped to 36v. power dissipation increases and the device turns off it junction temperature reaches thermal shutdown temperature. functional description the device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. the output signals are processed by internal logic. to protect the device against short circuit and over-current condition the thermal protection turns the integrated power mos off at a minimum junction temperature of 140 o c. when the temperature returns to about 125 o c the switch is automatically turned on again. to ensur the protection in all v cc conditions and in all the junction temperature range it is necessary to limit the voltage drop across drain and source (pin 3 and 5) at 29 v. the device is able to withstand a load dump according the test pulse 5 at level iii of the iso tr/1 7631. above v cc = 36v the output voltage is clamped to 36v. power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. protecting the device against reverse battery the simplest way to protect the device against a continuous reverse battery voltage (-26v) is to insert a schottky diode between pin 1 (gnd) and ground, as shown in the typical application circuit (fig. 3). the consequences of the voltage drop across this diode are as follows: - if the input is pulled to power gnd, a negative voltage of -v f is seen by the device. (v il ,v ih thresholds and v stat are increased by v f with respect to power gnd). - the undervoltage shutdown level is increased by v f . if there is no need for the control unit to handle external analog signals referred to the power gnd, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal gnd for the whole control board. in this way no shift of v ih ,v il and v stat takes place and no negative voltage appears on the input pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any iso normalized negative pulses that occours in the automotive environment. vn05h 4/10
truth table input output diagnostic normal operation l h l h h h open circuit (no load) l h l h h l over-temperature l h l l h l under-voltage x x l l h h figure 1: waveforms figure 2: over current test circuit vn05h 5/10
figure 3: typical application circuit with a schottky diode for reverse supply protection figure 4: typical application circuit with separate signal ground vn05h 6/10
dim. mm inch min. typ. max. min. typ. max. a 4.30 4.80 0.169 0.189 c 1.17 1.37 0.046 0.054 d 2.40 2.80 0.094 0.110 d1 1.20 1.35 0.047 0.053 e 0.35 0.55 0.014 0.022 f 0.80 1.05 0.031 0.041 g 3.20 3.60 0.126 0.142 g1 6.60 7.00 0.260 0.276 h1 9.30 9.70 0.366 0.382 h2 10.40 0.409 h3 10.05 10.40 0.396 0.409 l 17.50 18.20 0.689 0.716 l1 15.45 16.05 0.608 0.632 l2 21.00 21.80 0.827 0.858 l3 22.10 22.90 0.870 0.901 l5 2.60 3.00 0.102 0.118 l6 15.10 15.80 0.594 0.622 l7 6.00 6.60 0.236 0.260 m 4.15 4.85 0.163 0.191 m1 3.65 4.36 0.143 0.171 r 0.5 0.020 v4 90 o 90 o dia 3.65 3.85 0.144 0.152 p010l3f pentawatt (vertical) mechanical data vn05h 7/10
dim. mm inch min typ max min typ max a 4.30 4.80 0.169 0.189 c 1.17 1.37 0.046 0.054 d 2.40 2.80 0.094 0.110 e 0.35 0.55 0.014 0.021 f 0.80 1.05 0.031 0.041 g 3.20 3.60 0.126 0.142 g1 6.60 7.00 0.260 0.275 h1 9.30 9.70 0.366 0.382 h2 10.40 0.409 h3 10.05 10.40 0.396 0.409 l2 14.60 15.20 0.575 0.598 l3 3.50 4.10 0.137 0.161 l5 2.60 3.00 0.102 0.118 l6 15.10 15.80 0.594 0.622 l7 6.00 6.60 0.236 0.260 v4 90 o 90 o diam. 3.65 3.85 0.144 0.151 po1ol1_e pentawatt (horizontal) mechanical data vn05h 8/10
dim. mm inch min typ max min typ max a 4.30 4.80 0.169 0.189 c 1.17 1.37 0.046 0.054 d 2.40 2.80 0.094 0.110 e 0.35 0.55 0.014 0.021 f 0.80 1.05 0.031 0.041 f2 1.10 1.40 0.043 0.055 f3 1.25 1.55 0.049 0.061 g 3.20 3.60 0.126 0.142 g1 6.60 7.00 0.260 0.275 h1 9.30 9.70 0.366 0.382 h2 10.40 0.409 h3 10.05 10.40 0.396 0.409 l2 23.05 23.80 0.907 0.937 l3 25.30 26.10 0.996 1.027 l4 0.90 2.90 0.035 0.114 l5 2.60 3.00 0.102 0.118 l6 15.10 15.80 0.594 0.622 l7 6.00 6.60 0.236 0.260 v4 90 o 90 o diam. 3.65 3.85 0.144 0.151 p010d pentawatt (in-line) mechanical data vn05h 9/10
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