caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. document no. pu10125ej02v0ds (2nd edition) date published september 2002 cp(k) printed in japan silicon power mos fet NE552R679A 3.0 v operation silicon rf power ld-mos fet for 460 mhz 0.6 w transmission amplifiers data sheet ? nec compound semiconductor devices 2001, 2002 description the NE552R679A is an n-channel silicon power latera lly diffused mos fet s pecially designed as the transmission power amplifier for 3.0 v frs (family radi o service). dies are manufactured using our newmos2 technology (our wsi gate lateral-diffusion mos fet) and housed in a surface mount package. this device can deliver 28.0 dbm output power with 60% power added efficiency at 460 mhz under the 3.0 v supply voltage. features ? high output power : p out = 28.0 dbm typ. (v ds = 3.0 v, i dset = 300 ma, f = 460 mhz, p in = 15 dbm) high power added efficiency : add = 60% typ. (v ds = 3.0 v, i dset = 300 ma, f = 460 mhz, p in = 15 dbm) high linear gain : g l = 20 db typ. (v ds = 3.0 v, i dset = 300 ma, f = 460 mhz, p in = 5 dbm) surface mount package : 5.7 5.7 1.1 mm max. single supply : v ds = 2.8 to 6.0 v applications family radio service : 3.0 v handsets ordering information part number package marking supplying form NE552R679A-t1 79a au 12 mm wide embossed taping gate pin face the perforation side of the tape qty 1 kpcs/reel NE552R679A-t1a 12 mm wide embossed taping gate pin face the perforation side of the tape qty 5 kpcs/reel remark to order evaluation samples, c ontact your nearby sales office. part number for sample order: NE552R679A the mark ! shows major revised points.
data sheet pu10125ej02v0ds 2 NE552R679A absolute maximum ratings (t a = +25 c) parameter symbol ratings unit drain to source voltage v ds 15.0 v gate to source voltage v gs 5.0 v drain current i ds 350 ma drain current (pulse test) i ds note 600 ma total power dissipation p tot 10 w channel temperature t ch 125 ? note duty cycle 50%, t on recommended operating conditions parameter symbol test conditions min. typ. max. unit drain to source voltage v ds 2.8 3.0 6.0 v gate to source voltage v gs 02.03.0v drain current i ds ? electrical characteristics (t a = +25 c, unless otherwise specified, using nec standard test fixture) parameter symbol test conditions min. typ. max. unit gate to source leak current i gss v gs = 5.0 v ?? ?? ?? ? ? ? ? ? ? note1 55 60 ? note2 g l ? ? note 1. dc performance is 100% testing. rf performance is testing several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples. 2. p in = 5 dbm
data sheet pu10125ej02v0ds 3 NE552R679A typical characteristics (t a = +25 c) p out i ds d ? ? ? ? ? ? ? ? ? ? ? ? ? ? remark the graphs indicate nominal characteristics.
data sheet pu10125ej02v0ds 4 NE552R679A s-parameters test conditions: v ds = 3.0 v, i dset = 300 ma, t a = +25c) frequency s11 s21 s12 s22 mag note msg note k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db db ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? note when k < ? ? ? ? large signal impedance (v ds = 3.0 v, i ds = 300 ma, f = 460 mhz) f (mhz) z in ( ? ? note 460 7.47 +j18.24 4.82 +j5.04 note z ol is the conjugate of optimum load impedance at gi ven voltage, idling current, input power and frequency. s 21 s 12 (k ? ? ? ? ?? ? ?? ? ?? ??? ?
data sheet pu10125ej02v0ds 5 NE552R679A evaluation board for 460 mhz v gs v ds c1 c7 c8 c3 c4 c9 r1 c5 c6 l1 c6 c7 c8 c9 c2 unit : mm 30.0 48.0 symbol value comment c1 9.1 pf c2 12 pf c3 20 pf c4 3.3 pf c5 13 pf c6 22 pf c7 1 000 pf c8 0.33 f c9 3.3 f - 16v r1 1 000 ? l1 22 nh circuit board t = 0.4 mm, r = 4.5 r4775
data sheet pu10125ej02v0ds 6 NE552R679A package dimensions 79a (unit: mm) 0.90.2 0.20.1 (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain au 0x001 79a package recommended p.c.b. layout (unit: mm) 1.7 4.0 0.5 1.0 5.9 1.2 gate source drain 0.5 6.1 0.5 through hole: 0.2 33 stop up the hole with a rosin or something to avoid solder flow.
data sheet pu10125ej02v0ds 7 NE552R679A recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recomm ended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 vps peak temperature (package surface temperature) : 215 c or below time at temperature of 200 c or higher : 25 to 40 seconds preheating time at 120 to 150 c : 30 to 60 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below vp215 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (pin temperature) : 350 c or below soldering time (per pin of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350-p3 caution do not use different soldering methods together (except for partial heating).
data sheet pu10125ej02v0ds 8 NE552R679A m8e 00. 4 - 0110 the information in this document is current as of september, 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the po ssibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety m easures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": com puters, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipm ent (not specifically designed for life support) "specific": a ircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
nec compound semiconductor devices hong kong limited hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-528-0301 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-528-0302 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-01 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0209 nec compound semiconductor devices, ltd. 5th sales group, sales division tel: +81-3-3798-6372 fax: +81-3-3798-6783 e-mail: salesinfo@csd-nec.com business issue nec compound semiconductor devices, ltd. http://www.csd-nec.com/ sales engineering group, sales division e-mail: techinfo@csd-nec.com fax: +81-44-435-1918 technical issue NE552R679A
|
