power transistors 277 1: emitter 2: collector 3: base to-126b-a1 package unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sd0946 v cbo 30 v voltage 2sd0946a 60 2sd0946b 100 collector to 2sd0946 v ceo 25 v emitter voltage 2sd0946a 50 2sd0946b 80 emitter to base voltage v ebo 5v peak collector current i cp 1.5 a collector current (t c = 25 c) i c 1a collector power dissipation p c 1.2 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 25 v, i e = 0 100 na emitter cutoff current i ebo v eb = 4 v, i c = 0 100 na collector to base 2sd0946 v cbo i c = 100 a, i e = 0 30 v voltage 2sd0946a 60 2sd0946b 100 collector to emitter 2sd0946 v ceo i c = 1 ma, i b = 0 25 v voltage 2sd0946a 50 2sd0946b 80 emitter to base voltage v ebo i e = 100 a, i c = 0 5 v forward current transfer ratio * h fe v ce = 10 v, i c = 1 a 4 000 40 000 collector to emitter saturation voltage v ce(sat) i c = 1 a, i b = 1 ma 1.8 v base to emitter saturation voltage v be(sat) i c = 1 a, i b = 1 ma 2.2 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 150 mhz note) * : rank classification rank q r s h fe 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 internal connection b e c 8.0 +0.5 ?0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 2sd0946, 2sd0946a, 2sd0946b (2sd946, 2sd946a, 2sd946b) silicon npn epitaxial planar type darlington for low-frequency amplification features ? forward current transfer ratio h fe is designed high, which is appropriate to the driver circuit of motors and printer hammer ? a shunt resistor is omitted from the driver absolute maximum ratings t c = 25 c note.) the part numbers in the parenthesis show conventional part number.
power transistors 278 2sd0946, 2sd0946a, 2sd0946b p c ? t a v ce(sat) ? i c v be(sat) ? i c h fe ? i c c ob ? v cb 0 0 160 40 120 80 140 20 100 60 0.4 1.2 0.8 1.6 without heat sink ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 3 1 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 i c /i b =1000 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 i c /i b =1000 25 ? c 100 ? c t c = 25 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 3 1 0.1 0.03 0.3 100 300 1000 3000 10000 30000 100000 t c =100 ? c 25 ? c 25 ? c v ce =10v collector current i c ( a ) forward current transfer ratio h fe 0 1 24 20 16 12 8 4 3 10 30 100 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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