2N6385SMD05 v ceo collector ? emitter voltage v cex collector ? emitter voltage v cbo collector ? base voltage v ebo emitter ? base voltage i c continuous collector current i cm peak collector current i b base current - continuous p tot total dissipation at t case = 25c derate above 25c t stg , t j operating and storage junction temperature range(2) 80v 80v 80v 5v 10a 15a 0.25a 100w 0.571w/c ?65 to +200c mechanical data dimensions in mm (inches) 2 1 3 2.41 (0.095) (0.030) min. 3.05 (0.120) 5.72 (.225) 0.127 (0.005) (0.296) 10.16 (0.400) 0.76 (0.030) min. 3.175 (0.125) max. 0.50 (0.020) max. 7.54 0.76 2.41 (0.095) 0.127 (0.005) (0.286) 7.26 16 plcs 0.50(0.020) 0.127 (0.005) silicon power npn darlington transistor features ? high gain darlington performance absolute maximum ratings (t case = 25c unless otherwise stated) applications ? audio amplifiers ? hammer drivers ? shunt and series regulators semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6387 issue 1 smd05 (to-276aa) pad 1 ? base pad 2 ? collector pad 3 ? emitter
2N6385SMD05 electrical characteristics (t case = 25c unless otherwise stated) i c = 200ma i b = 0 v ce = 80v i b = 0 v ce = v ceo(br) v be(off) = 1.5v t c = 150c v eb = 5v i c = 0 r eb =100 i c = 200ma v be(off) = 1.5v i c = 200ma v ce = 3v i c = 5a v ce = 3v i c = 10a i c = 5a i b = 0.01a i c = 10a i b = 0.1a v ce = 3v i c = 5a v ce = 3v i c = 10a i f = 10a v cb =10v i e = 0 f test = 1.0mh z v ce = 5v i c = 1.0a f = 1.0kh z v ce = 5v i c = 1.0a f = 1.0kh z l =12mh r be = 100 v be(off) = 1.5v i c = 4.5a collector ? emitter breakdown voltage collector cut?off current collector cut?off current emitter cut?off current collector?emitter breakdown voltage * collector?emitter breakdown voltage * dc current gain collector ? emitter saturation voltage base ? emitter on voltage diode forward voltage output capacitance *magnitude of common emitter small signal short-circuit common emitter small signal short-circuit forward energy with base-reverse biased 80 1.0 0.3 3.0 10 80 80 1000 20000 100 2.0 3.0 2.8 4.5 4.0 200 20 1000 120 v ma ma ma v ? v v v pf ? ? mj v ceo(br)* i ceo i cev i ebo v cer(br) v cev(br) h fe v ce(sat) v be(on) v f c ob lh fe l h fe e s/b off characteristics dynamic characteristics on characteristics second breakdown parameter test conditions min. typ. max. unit * pulse test t p = 300 s , duty cycle 2% semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6387 issue 1
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