tsm 4nb60 600v n-channel power mosfet 1/10 version: b11 to - 220 ito - 220 product summary v ds (v) r ds(on) ( ) i d (a) 600 2.5 @ v gs =10v 2 general description the tsm4nb60 n-channel power mosfet is produced by new advance planar process. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. to - 251 (ipak) to - 252 (dpak) features low r ds(on) 2.2 (typ.) low gate charge typical @ 14.5nc (typ.) low crss typical @ 7.0pf (typ.) 100% avalanche tested ordering information part no. package packing tsm4nb60ch c5g to-251 75pcs / tube tsm4nb60cp rog to-252 2.5kpcs / 13 reel tsm4nb60cz c0 to-220 50pcs / tube tsm4nb60ci c0 ito-220 50pcs / tube note: g denotes for halogen free absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit ipak/dpak ito-220 to-220 drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 4 a tc = 100oc 2.4 a pulsed drain current * i dm 16 a single pulse avalanche energy (note 2) e as 100 mj avalanche current (repetitive) (note 1) i ar 4 a repetitive avalanche energy (note 1) e ar 5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns total power dissipation @ t c = 25 o c p tot 50 25 70 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c note: limited by maximum junction temperature block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
tsm 4nb60 600v n-channel power mosfet 2/10 version: b11 thermal performance parameter symbol limit unit ipak/dpak ito-220 to-220 thermal resistance - junction to case r ? jc 2.5 5 1.78 o c/w thermal resistance - junction to ambient r ? ja 83 62.5 62.5 o c/w electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 600 -- -- v drain-source on-state resistance v gs = 10v, i d = 2a r ds(on) -- 2.2 2.5 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.5 3.5 4.5 v zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transfer conductance v ds = 40v, i d = 2a g fs -- 2.6 -- s dynamic total gate charge v ds = 480v, i d = 4a, v gs = 10v (note 4,5) q g -- 14.5 -- nc gate-source charge q gs -- 3.4 -- gate-drain charge q gd -- 7 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 500 -- pf output capacitance c oss -- 53.2 -- reverse transfer capacitance c rss -- 7 -- switching turn-on delay time v gs = 10v, i d = 4a, v dd = 300v, r g =25 (note 4,5) t d(on) -- 11 -- ns turn-on rise time t r -- 20 -- turn-off delay time t d(off) -- 30 -- turn-off fall time t f -- 19 -- source-drain diode ratings and characteristic source current integral reverse diode in the mosfet i s -- -- 4 a source current (pulse) i sm -- -- 16 a diode forward voltage i s = 4a, v gs = 0v v sd -- -- 1.13 v reverse recovery time v gs = 0v, i s =4a, di f /dt = 100a/us t fr -- 522 -- ns reverse recovery charge q fr -- 1.6 -- uc note 1: repetitive rating: pulse width limited by maximum junction temperature note 2: v dd = 50v, i as =4a, l=8mh, r g =25 , starting t j =25oc note 3: i sd 4a, di/dt 200a/us, v dd bv dss , starting t j =25oc note 4: pulse test: pulse width 300us, duty cycle 2% note 5: essentially independent of operating temperature
tsm 4nb60 600v n-channel power mosfet 3/10 version: b11 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 4nb60 600v n-channel power mosfet 4/10 version: b11 diode reverse recovery time test circuit & waveform
tsm 4nb60 600v n-channel power mosfet 5/10 version: b11 electrical characteristics curve (ta = 25oc, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge
tsm 4nb60 600v n-channel power mosfet 6/10 version: b11 to-220 mechanical drawing marking diagram y = year code m = mon th code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-220 dimension dim millimeters inches min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
tsm 4nb60 600v n-channel power mosfet 7/10 version: b11 ito-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code ito-220 dimension dim millimeters inches min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
tsm 4nb60 600v n-channel power mosfet 8/10 version: b11 to-251 mechanical drawing marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-251 dimension dim millimeters inches min max min max a 2.10 2.50 0.083 0.098 b 0.65 1.05 0.026 0.041 b1 0.58 0.62 0.023 0.024 b2 4.80 5.20 0.189 0.205 b3 0.68 0.72 0.027 0.028 c 0.35 0.65 0.014 0.026 c1 0.40 0.60 0.016 0.024 d 5.30 5.70 0.209 0.224 e 6.30 6.70 0.248 0.264 e 2.30 bsc 0.09 bsc l 7.00 8.00 0.276 0.315 l1 1.40 1.80 0.055 0.071 l2 1.30 1.70 0.051 0.067 l3 0.50 0.90 0.020 0.035
tsm 4nb60 600v n-channel power mosfet 9/10 version: b11 to-252 mechanical drawing marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.30 bsc 0.090 bsc b 10.20 10.80 0.402 0.425 c 5.30 5.70 0.209 0.224 d 6.30 6.70 0.248 0.264 e 2.10 2.50 0.083 0.098 f 0.00 0.20 0.000 0.008 g 4.80 5.20 0.189 0.205 g1 0.40 0.80 0.016 0.031 h 0.40 0.60 0.016 0.024 h1 0.35 0.65 0.014 0.026 j 3.35 3.65 0.132 0.144 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.067
tsm 4nb60 600v n-channel power mosfet 10/10 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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