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  2006 apr281 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power ampli?ersh1517; SH1517P features requires very few external components high output power fixed gain good ripple rejection mute/standby switch ac and dc short-circuit safe to ground and v p thermally protected reverse polarity safe capability to handle high energy on outputs (v p =0v) no switch-on/switch-off plop electrostatic discharge protection. general description the sh1517 is an integrated class-b dual output amplifier in a plastic single in-line medium power package with fin (sil9mpf) and a plastic heat-dissipating dual in-line package (hdip18). the device is primarily developed for multi-media applications. quick reference data ordering information symbol parameter conditions min. typ. max. unit v p supply voltage 6.0 14.4 18.0 v i orm repetitive peak output current -- 2.5 a i q(tot) total quiescent current - 40 80 ma i sb standby current - 0.1 100 m a i sw switch-on current -- 40 m a | z i | input impedance 50 -- k w p o output power r l =4 w ; thd = 0.5% - 5 - w r l =4 w ; thd = 10% - 6 - w svrr supply voltage ripple rejection f i = 100 hz to 10 khz 48 -- db a cs channel separation 40 -- db g v closed loop voltage gain 19 20 21 db v no(rms) noise output voltage (rms value) - 50 -m v t c crystal temperature -- 150 c type number package name description version sh1517sil9mpf plastic single in-line medium power package with ?n; 9leadssot110-1 SH1517Phdip18 plastic heat-dissipating dual in-line package; 18leadssot398-1 www.datasheet.in
2006 apr282 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P block diagram fig.1 block diagram. handbook, full pagewidth mute/stand-by switch input mlc351 output 1 15 k w 15 k w x 1 va stand-by switch v p mute switch stand-by reference voltage 18 k w 18 k w 2 k w 60 k w mute switch c m power stage 4 8 mute switch va va c m 2 k w 60 k w power stage 6 275 sgnd signal ground pgnd output 2 non-inverting input 1 non-inverting input 2 9 supply voltage ripple rejection output 3 1 sh1517 mute reference voltage input reference voltage v p power ground (substrate) www.datasheet.in
2006 apr283 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P pinning symbol pin description - inv1 1 non-inverting input 1 sgnd 2 signal ground svrr 3 supply voltage ripple rejection output out1 4 output 1 pgnd 5 power ground out2 6 output 2 v p 7 supply voltage m/ss 8 mute/standby switch input - inv2 9 non-inverting input 2 fig.2 pin configuration for sot110-1. n dbook, halfpage mlc352 1 2 3 4 5 6 7 8 9 p v out2 sgnd inv1 inv2 sh1517 out1 m/ss svrr pgnd fig.3 pin configuration for sot398-1. pins 10 to 18 should be connected to gnd or floating. n dbook, halfpage mlc353 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 p v out2 sgnd inv1 inv2 SH1517P out1 m/ss svrr pgnd functional description the sh1517 contains two identical amplifiers with differential input stages. the gain of each amplifier is fixed at 20 db. a special feature of the device is the mute/standby switch which has the following features: low standby current (<100 m a) low mute/standby switching current (low cost supply switch) mute condition. www.datasheet.in
2006 apr28 4 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P limiting values in accordance with the absolute maximum rating system (iec 134). thermal resistance symbol parameter conditions min. max. unit v p supply voltage - 18 v v p(sc) ac and dc short-circuit safe voltage - 18 v v p(r) reverse polarity - 6v erg o energy handling capability at outputs v p =0v - 200 mj i osm non-repetitive peak output current - 4a i orm repetitive peak output current - 2.5 a p tot total power dissipation see fig.4 - 15 w t stg storage temperature - 55 +150 c t amb operating ambient temperature - 40 +85 c t c crystal temperature - 150 c symbol type number parameter value unit r th j-c sh151 thermal resistance from junction to case8k/w r th j-p sh1517 thermal resistance from junction to pins15k/w r th j-a sh1517; SH1517P thermal resistance from junction to ambient50k/w fig.4 power derating curve. (1) r th j-c = 8 k/w. (2) r th j-p = 15 k/w. handbook, halfpage 25 0 50 150 12 0 mlc354 100 t ( c) o amb p (w) 18 6 (1) (2) www.datasheet.in
2006 apr285 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P dc characteristics v p = 14.4 v; t amb =25 c; measured in fig.6; unless otherwise specited. note 1. the circuit is dc adjusted at v p = 6 to 18 v and ac operating at v p = 8.5 to 18 v. symbol parameter conditions min. typ. max. unit supply v p supply voltage note 1 6.0 14.4 18.0 v i q(tot) total quiescent current - 40 80 ma v o dc output voltage - 6.95 - v mute/standby switch v 8 switch-on voltage level see fig.5 8.5 -- v mute condition v o output signal in mute position v i(max) =1v; f i =20hzto15khz -- 2mv standby condition i sb dc current in standby condition -- 100 m a v sw switch-on current - 12 40 m a www.datasheet.in
2006 apr286 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P ac characteristics v p = 14.4 v; r l =4 w ; f = 1 khz; t amb =25 c; measured in fig.6; unless otherwise specited. notes 1. output power is measured directly at the output pins of the ic. 2. frequency response externally fixed. 3. ripple rejection measured at the output with a source impedance of 0 w , maximum ripple amplitude of 2 v (p-p) and a frequency between 100 hz and 10 khz. 4. noise voltage measured in a bandwidth of 20 hz to 20 khz. 5. noise output voltage independent of r s (v i = 0 v). symbol parameter conditions min. typ. max. unit p o output power thd = 0.5%; note 1 4 5 - w thd = 10%; note 1 5.5 6.0 - w thd total harmonic distortion p o =1w - 0.1 - % f lr low frequency roll-off at - 3 db; note 2 - 45 - hz f hr high frequency roll-off at - 1db 20 -- khz g v closed loop voltage gain 19 20 21 db svrr supply voltage ripple rejection note 3 on 48 -- db mute 48 -- db standby 80 -- db | z i | input impedance 50 60 75 k w v no noise output voltage on r s =0 w ; note 4 - 50 -m v on r s =10 w ; note 4 - 70 100 m v mute note 5 - 50 -m v a cs channel separation r s =10 w 40 -- db |d g v | channel unbalance - 0.1 1 db www.datasheet.in
2006 apr28 7 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P fig.5 standby, mute and on conditions. handbook, halfpage 8.5 0 mlc355 v 18 6.4 3.3 2 11 (v) on (i = 40 ma) p mute (i = 40 ma) p standby (i 100 m a) p application information fig.6 application circuit diagram. handbook, full pagewidth mlc356 100 nf p v sh1517 87 standby switch 220 nf input 1 1000 m f 1000 m f input reference voltage 2 5 signal ground power ground 1 9 220 nf input 2 4 6 3 2200 m f internal 1/2 v p 100 m f 60 k w 60 k w 20 db 20 db www.datasheet.in
2006 apr288 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power ampli?ersh1517; SH1517P package outlines unit a a max. 2 a 3 b 1 d 1 b 2 bcd (1) e (1) z max. (1) elpp 1 q 1 q 2 q references outline version european projection issue date iec jedec eiaj mm 18.5 17.8 3.7 8.7 8.0 a 4 15.8 15.4 1.40 1.14 0.67 0.50 1.40 1.14 0.48 0.38 21.8 21.4 21.4 20.7 6.48 6.20 3.4 3.2 2.54 1.0 5.9 5.7 4.4 4.2 3.9 3.4 15.1 14.9 q 1.75 1.55 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 2.75 2.50 sot110-1 92-11-17 95-02-25 0 5 10 mm scale 0.25 w d e a a c a 2 3 a 4 q 1 q 2 l q w m b b 1 b 2 d 1 p q 1 z e 19 p seating plane pin 1 index sil9mpf: plastic single in-line medium power package with fin; 9 leads sot110-1 www.datasheet.in
2006 apr289 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P unit a max. 12 b 1 (1) (1) (1) b 2 cd e e m z h l references outline version european projection issue date iec jedec eiaj mm dimensions (inch dimensions are derived from the original mm dimensions) sot398-1 94-04-13 95-01-25 a min. a max. b max. w m e e 1 1.40 1.14 0.67 0.50 0.47 0.38 21.85 21.35 6.5 6.2 3.9 3.1 0.25 2.54 7.62 8.32 8.02 8.7 7.7 1.0 4.7 0.51 3.7 inches 0.06 0.04 0.03 0.02 0.02 0.01 1.05 0.75 0.04 0.03 0.87 0.84 0.26 0.24 0.15 0.12 0.01 0.10 0.30 0.33 0.32 0.34 0.30 0.04 0.19 0.02 0.15 m h c (e ) 1 m e w m b 1 b 2 e a a 1 a 2 l seating plane z d e 18 1 10 9 b pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. hdip18: plastic heat-dissipating dual in-line package; 18 leads sot398-1 www.datasheet.in
2006 apr28 10 sthsitech semiconductors co.,limited www.sth-semico.com 2 6 w stereo power amplitersh1517; SH1517P soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (order code 9398 652 90011). soldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. repairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective specitcation this data sheet contains target or goal specitcations for product development. preliminary specitcation this data sheet contains preliminary data; supplementary data may be published later. product specitcation this data sheet contains tnal product specitcations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specitcation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specitcation. www.datasheet.in


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