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july 2010 doc id 15734 rev 2 1/14 14 STB80N20M5 stp80n20m5 n-channel 200 v, 0.019 ? , 61 a, to-220, d 2 pa k mdmesh? v power mosfet features amongst the best r ds(on) * area high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description the devices are n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STB80N20M5 200 v < 0.023 ? 61 a stp80n20m5 61 a 1 2 3 to-220 d 2 pak 1 3 !-v $ ' 3 table 1. device summary order codes marking package packaging STB80N20M5 80n20m5 d 2 pak tape and reel stp80n20m5 80n20m5 to-220 tube www.st.com
contents STB80N20M5, stp80n20m5 2/14 doc id 15734 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STB80N20M5, stp80n20m5 electrical ratings doc id 15734 rev 2 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 61 a i d drain current (continuous) at t c = 100 c 38 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 244 a p tot total dissipation at t c = 25 c 190 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 20 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 500 mj dv/dt (2) 2. i sd 61 a, di/dt 400 a/s; v peak < v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 d 2 pak r thj-case thermal resistance junction-case max 0.66 c/w r thj-amb thermal resistance junction-ambient max 62.50 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STB80N20M5, stp80n20m5 4/14 doc id 15734 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 30.5 a 0.019 0.023 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 4329 275 39 - pf pf pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v ds = 0 to 160 v, v gs = 0 -709-pf c o(er) (2) 2. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related -280-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.9 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v, i d = 30.5 a, v gs = 10 v (see figure 15 ) - 104 23 53 - nc nc nc
STB80N20M5, stp80n20m5 electrical characteristics doc id 15734 rev 2 5/14 table 6. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c (off) voltage delay time voltage rise time current fall time crossing time v dd = 160 v, i d = 61 a, r g = 4.7 ?, v gs = 10 v (see figure 16 ) (see figure 19 ) - 66 31 131 176 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 61 244 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 61 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 61 a, di/dt = 100 a/s v dd = 60 v (see figure 19 ) - 176 1.4 16 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 61 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 19 ) - 218 2 19 ns c a
electrical characteristics STB80N20M5, stp80n20m5 6/14 doc id 15734 rev 2 2.1 electrical characteristi cs (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse !-v ) $ 6 $3 6 ! 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 '3 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v
STB80N20M5, stp80n20m5 electrical characteristics doc id 15734 rev 2 7/14 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ? * !-v 6 '3th 4 * ? # norm !-v 2 $3on 4 * ? # norm !-v 6 3$ ) 3$ ! 6 4 * ? # 4 * ? # 4 * ? # !-v "6 $33 4 * ? # norm !-v
test circuits STB80N20M5, stp80n20m5 8/14 doc id 15734 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
STB80N20M5, stp80n20m5 package mechanical data doc id 15734 rev 2 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STB80N20M5, stp80n20m5 10/14 doc id 15734 rev 2 d2pak (to-263) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 0.0 3 0.2 3 0.001 0.00 9 b 0.70 0. 93 0.027 0.0 3 7 b 2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.2 3 1. 3 60.04 8 0.05 3 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 d1 7.50 0.2 9 5 e 10 10.40 0. 39 40.40 9 e1 8 .50 0. 33 4 e 2.54 0.1 e1 4. 88 5.2 8 0.1 9 20.20 8 h15 15. 8 50.5 9 00.624 j1 2.4 9 2.6 9 0.0 99 0.106 l2.2 9 2.7 9 0.0 9 0 0.110 l1 1.27 1.40 0.05 0.055 l2 1. 3 0 1.75 0.051 0.06 9 r 0.4 0.016 v2 0 8 0 8 0079457_m
STB80N20M5, stp80n20m5 package mechanical data doc id 15734 rev 2 11/14 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
packaging mechanical data STB80N20M5, stp80n20m5 12/14 doc id 15734 rev 2 5 packaging mechanical data tape and reel shipment d 2 pak footprint dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e1.651. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t0.250. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data
STB80N20M5, stp80n20m5 revision history doc id 15734 rev 2 13/14 6 revision history table 8. document revision history date revision changes 01-jul-2009 1 first release 03-jul-2010 2 document status promoted from preliminary data to datasheet
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