? 2005 ixys all rights reserved ixtp 2r4n50p ixty 2r4n50p symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gsm transient 40 v v gsm continuous 30 v i d25 t c = 25 c 2.4 a i dm t c = 25 c, pulse width limited by t jm 4.5 a i ar t c = 25 c 2.4 a e ar t c = 25 c8mj e as t c = 25 c 100 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 50 p d t c = 25 c55w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-252 0.8 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 25 a 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 50 na i dss v ds = v dss 1 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , note 1 3.75 polarhv tm power mosfet advance technical information n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixtp 2r4n50p ixty 2r4n50p v dss = 500 v i d25 = 2.4 a r ds(on) 3.75 ds99445(09/05) g = gate d = drain s = source tab = drain to-220 (ixtp) d (tab) g s to-252 aa (ixty) g s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtp 2r4n50p ixty 2r4n50p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 1.0 2.2 s c iss 240 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 31 pf c rss 4pf t d(on) 14 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 20 ns t d(off) r g = 50 (external) 45 ns t f 18 ns q g(on) 6.1 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 1.8 nc q gd 2.9 nc r thjc 2.25 k/w r thch (to-220) 0.25 kw source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 2.4 a i sm repetitive 9.6 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 2.4 a, -di/dt = 100 a/ s 400 ns v r = 100 v; v gs = 0 v note 1: pulse test, t 300 s, duty cycle d 2 % dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 to-252 aa outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline pins: 1 - gate 3 - source 2, 4 - drain
? 2005 ixys all rights reserved ixtp 2r4n50p ixty 2r4n50p fig. 2. extended output characteristics @ 25 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125 o c 0 0.4 0.8 1.2 1.6 2 2.4 0246810121416182022 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 1. output characteristics @ 25 o c 0 0.4 0.8 1.2 1.6 2 2.4 012345678910 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 2.4a i d = 1.2a v gs = 10v fig. 6. drain current vs. case temperature 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 00.511.522.533.544.5 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixtp 2r4n50p ixty 2r4n50p fig. 11. capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 01234567 q g - nanocoulombs v g s - volts v ds = 250v i d = 1.2a i g = 10ma fig. 7. input admittance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 0.5 1 1.5 2 2.5 3 3.5 4 00.511.522.533.54 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 1 2 3 4 5 6 7 0.4 0.5 0.6 0.7 0.8 0.9 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 0.1 1 10 10 100 1000 v d s - volts i d - amperes 10 0 s 1m s dc t j = 150 o c t c = 25 o c r ds(on) limit 10 m s 25 s
? 2005 ixys all rights reserved ixtp 2r4n50p ixty 2r4n50p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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