wsp20d 6 5 rev. c nov.2008 t01-3 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. power power power power schottky schottky schottky schottky rectifier rectifier rectifier rectifier features features features features 2 0 a (1 10a) ,6 5 v v f (max)=0.68v(@tj=125 ) low power loss, high efficiency common cathode structure guard ring for over voltage protection , high reliability maximum junction temperature range(1 75 ) general general general general description description description description dual center tap schottky rectifiers suited for high frequency switch power supply and free wheeling diodes, polarity protection applications . absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol parameter value units v d rm repetitive peak reverse voltage 65 v v d c maximum dc blocking voltage 65 v i f(rms) rms forward c urrent 30 a i f(av) average forward c urrent per diode 10 a per device 20 i fsm surge non repetitive forward current 150 a p a rm repetitive peak avalanche power 5800 w i rrm repetitive peak reverse current 1 a dv/dt critical rate of rise of reverse voltage 10000 v/ns t j, junction temperature 1 75 t stg storage temperature - 40 ~ 150 symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 1.9 /w r qcs thermal resistance, case-to-sink 0. 1 - - /w a1 a1 a1 a1 k k k k a2 a2 a2 a2 to220 to220 to220 to220 www.datasheet.in
wsp20d 6 5 2 /4 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ( ( ( per per per per diode diode diode diode ) ) ) ) note : tp = 380 s, < 2% characteristics symbol test condition min typ . max unit reverse leakage current i r vr = vrrm tj = 25 c - - 30 a tj = 1 25 c - 30 ma forward voltage drop v f if= 10a tj = 25 c - 0.67 0.76 v tj = 1 25 c - 0.63 0.68 if= 20a tj = 25 c - - 0.74 tj = 1 25 c - 0.62 0.7 www.datasheet.in
wsp20d 6 5 3 /4 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. tj tj tj tj fig.3 fig.3 fig.3 fig.3 junction junction junction junction capacitance capacitance capacitance capacitance versus versus versus versus reverse reverse reverse reverse voltage voltage voltage voltage applied applied applied applied (typical (typical (typical (typical values, values, values, values, per per per per diode). diode). diode). diode). fig.2 fig.2 fig.2 fig.2 average average average average current current current current versus versus versus versus ambient ambient ambient ambient temperature temperature temperature temperature ( ( ( ( d d d d =0.5) =0.5) =0.5) =0.5) (per (per (per (per diode) diode) diode) diode) fig.1 fig.1 fig.1 fig.1 forward forward forward forward voltage voltage voltage voltage drop drop drop drop versus versus versus versus forward forward forward forward current current current current (maximum (maximum (maximum (maximum values, values, values, values, per per per per diode). diode). diode). diode). fig.4 fig.4 fig.4 fig.4 reverse reverse reverse reverse leakage leakage leakage leakage current current current current versus versus versus versus reverse reverse reverse reverse voltage voltage voltage voltage applied applied applied applied (typical (typical (typical (typical values, values, values, values, per per per per diode).. diode).. diode).. diode).. www.datasheet.in
wsp20d 6 5 4 /4 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm www.datasheet.in
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