QS8J1 transistors 1/5 1.5v drive pch+pch mosfet QS8J1 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) low on-resistance. 2) low voltage drive. (1.5 v) 3) high power package. z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) QS8J1 tr 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w / total p d c tch c tstg unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) ? 12 10 4.5 18 ? 1 ? 18 1.5 w / element 1.25 150 ? 55 to + 150 limits z thermal resistance parameter c/w / total rth(ch-a) symbol limits unit channel to ambient ? mounted on a ceramic board. 83.3 c/w / element 100 ? (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) each lead has same dimensions tsmt8 (8) (7) (5) (6) (1) (2) (4) (3) abbreviated symbol : j01
QS8J1 transistors 2/5 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ?? 10 av gs = 10v, v ds = 0v v dd ? 6v r l 1.3 ? / r g = 10 ? ? 12 ?? vi d = ? 1ma, v gs = 0v ??? 1 av ds = ? 12v, v gs = 0v ? 0.3 ?? 1.0 v v ds = ? 6v, i d = ? 1ma ? 21 29 i d = ? 4.5a, v gs = ? 4.5v ? 27 38 m ? m ? m ? i d = ? 2.2a, v gs = ? 2.5v ? 49 98 i d = ? 0.9a, v gs = ? 1.5v m ? ? 36 54 i d = ? 2.2a, v gs = ? 1.8v 6.5 ?? sv ds = ? 6v, i d = ? 4.5a ? 2450 ? pf v ds = ? 6v ? 320 290 ? pf v gs = 0v ? 12 ? pf f = 1mhz ? 75 ? ns ? 390 ? ns ? 215 ? ns ? 31 ? ns ? 4.5 ? nc ? 4.0 ? nc v gs = ? 4.5v ?? nc i d = ? 4.5a v dd ? 6 v i d = ? 2.2a v gs = ? 4.5v r l 2.7 ? r g = 10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ? ? pulsed ??? 1.2 v i s = ? 4.5a, v gs = 0v forward voltage parameter symbol min. typ. max. unit conditions
QS8J1 transistors 3/5 z electrical characteristic curves 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 drain-source voltage -v ds [v] drain current -i d [a] v gs =-10v v gs =-4.5 v v gs =-2.5 v v gs =-1.8 v v gs =-1.4 v ta=25 pulsed v gs =-1.3 v v gs =-1.2 v v gs =-1.5 v 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 gate-source voltage :- v gs [v] drain current : -i d [a] v ds = -6v pulsed ta=125 75 25 -25 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance:r ds (on) [m ? ] v gs =-1.5v v gs =-1.8v v gs =-2.5v v gs =-4.5v ta=25 pulsed 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 source-drain voltage : -v sd [v] reverse drain current current :- i dr [a] v gs =0v pulsed ta=125 75 25 -25 0 2 4 6 8 10 0246810 drain-source voltage -v ds [v] drain current -i d [a] v gs =-10v v gs =-1.6v v gs =-1.3v ta=25 pulsed v gs =-1.4v v gs =-1.2v v gs =-1.1v v gs =-1.5v 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance:r ds (on) [m ? ] v gs = -2.5v pulsed ta=125 ta= -25 ta= 75 ta= 25 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance :r ds (on) [m ? ] v gs = -4.5v pulsed ta=125 ta= -25 ta= 75 ta= 25 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance:r ds (on) [m ? ] v gs = -1.8v pulsed ta=125 ta= -25 ta= 75 ta= 25 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance:r ds (on) [m ? ] v gs = -1.5v pulsed ta=125 ta= -25 ta= 75 ta= 25 fig.1 typical output characteristics() fig.2 typical output characteristics() fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current() fig.5 static drain-source on-state resistance vs. drain current() fig.6 static drain-source on-state resistance vs. drain current() fig.7 static drain-source on-state resistance vs. drain current() fig.8 static drain-source on-state resista nce vs. drain current() fig.9 reverse drain current vs. sourse-drain voltage
QS8J1 transistors 4/5 0 20 40 60 80 0246810 gate-surce voltage : -v gs [v] static drain-source on-stat e resistance r ds (on) [m ? ] ta=25 pulsed i d = -4.5a i d = -2.2 a 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20 25 30 35 total gate charge : qg [nc] gate-source voltage : -v gs [v] ta=25 v dd = -6v i d =-4.5a r g =10 ? pulsed 100 1000 10000 0.01 0.1 1 10 100 drain-source voltage : -v ds [v] capacitance : c [pf] ciss coss crss ta=25 f=1mhz v gs =0v 0 0 1 10 100 0.0 0.1 1.0 10.0 forward transfer admittance : |yfs| [s] v gs =-6v pulsed ta= -25 ta= 125 ta= 25 ta= 75 1 10 100 1000 10000 00110 drain current : -i d [a] switching time : t [ns] tr tf td(on) td(off) ta=25 v dd = -6v v gs =-4.5v r g =10 ? pulsed fig.10 static drain-source on-state resista nce vs. gate-source voltage fig.11 forward transfer admittance vs. drain current fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.14 switching characteristics drain current : i d [a]
QS8J1 transistors 5/5 z measurement circuits fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching time waveforms 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd z notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit.
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