1 publication date: may 2002 sjj00235aed composite transistors parameter symbol rating unit rating collector to base voltage v cbo 50 v of collector to emitter voltage v ceo 50 v element collector current i c 100 ma total total power dissipation p t 150 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c xp0121m silicon npn epitaxial planar transistor for digital circuits/switching features ? two elements incorporated into one package (emitter-coupled transistors built-in resistor) ? reduction of the mounting area and assembly cost by one half basic part number of element ? unr121m (un121m) 2 elements 1: base (tr1) 4: collector (tr2) 2: emitter 5: collector (tr1) 3: base (tr2) eiaj: sc-88a smini5-g1 package unit: mm internal connection marking symbol: em parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 a, i e = 050 v collector to emittter voltage v ceo i c = 2 ma, i b = 050v collector cutoff current i cbo v cb = 50 v, i e = 0 0.1 a i ceo v ce = 50 v, i b = 0 0.5 emitter cutoff current i ebo v eb = 6 v, i c = 0 0.2 ma dc current gain h fe v ce = 10 v, i c = 5 ma 80 dc current gain ratio * h fe(small/large) v ce = 10 v, i c = 5 ma 0.5 0.99 collector to emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.06 0.25 v high level output voltage v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v low level output voltage v ol v cc = 5 v, v b = 2.5 v, r l = 1 k ? 0.2 v input resistance r 1 ? 30% 2.2 + 30% k ? resistance ratio r 1 / r 2 0.047 gain bandwidth product f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz electrical characteristics t a = 25 c 3 c absolute maximum ratings t a = 25 c 4 tr1 tr2 2 5 1 3 2.1 0.1 0.9 +0.2 ?0.1 0.9 0.1 0 to 0.1 1.25 0.10 1 3 2 0.20 0.05 (0.425) 1.3 0.1 2.0 0.1 54 (0.65) (0.65) 0.2 0.1 0.12 +0.05 ?0.02 5? 10? note) the part number in the parenthesis shows conventional part number. note) * : ratio between one and another device
xp0121m 2 sjj00235aed h fe ? i c c ob ? v cb i o ? v in p t ? t a i c ? v ce v ce(sat) ? i c 0 0 20 60 100 160 140 40 120 80 250 150 50 ambient temperature t a ( c) total power dissipation p t (mw) 100 200 v in ? i o 0 012 210 48 6 140 collector to emitter voltage v ce ( v ) collector current i c ( ma ) 120 100 80 60 40 20 i b = 1.0 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0.1 ma 0.01 0.1 1 1 10 100 i c / i b = 10 0.1 t a = 75 c 25 c ? 25 c collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1 10 100 100 150 50 200 250 300 350 400 1 000 v ce = 10 v 25 c ? 25 c dc current gain h fe collector current i c ( ma ) t a = 75 c 1 0 102030 10 40 5152535 f = 1 mhz t a = 25 c collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) 0 0.5 1 1.5 2 2.5 v o = 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) 1 10 100 1 000 0.1 0.1 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c 1 10
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