copyright@semiwell semiconductor co., ltd., all rights reserved. absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 600 800 v i t(rms) r.m.s on-state current t c = 58 c 1.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 9.1/10 a i 2 t i 2 t 0.41 a 2 s p gm peak gate power dissipation 1.0 w p g(av) average gate power dissipation 0.1 w i gm peak gate current 0.5 a v gm peak gate voltage 6.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 0.2 g STN1A60/80 apr, 2003. rev. 3 features repetitive peak off-state voltage : 600/800v r.m.s on-state current ( i t(rms) = 1 a ) high commutation dv/dt general description this device is suitable for low power ac switching applica- tion, phase control application such as fan speed and tem- perature modulation control, lighting control and static switching relay. 3.t2 2.gate 1.t1 symbol to-92 1 3 2 1/6 semiwell semiconductor bi-directional triode thyristor
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c --0.5ma v tm peak on-state voltage i t = 1.5 a, inst. measurement --1.6v i + gt1 i gate trigger current v d = 6 v, r l =10 --5 ma i - gt1 ii --5 i - gt3 iii --5 i + gt3 iv -712 v + gt1 i gate trigger voltage v d = 6 v, r l =10 --1.8 v v - gt1 ii --1.8 v - gt3 iii --1.8 v + gt3 iv --2.0 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 - - v (dv/dt)c critical rate of rise off- state voltage at commutation t j = 125 c, [di/dt]c = - 0 .5 a/ms, v d =2/3 v drm 2.0 - - v/ ? i h holding current - 4.0 - ma r th(j-c) thermal resistance junction to case - - 50 c/w r th(j-a) thermal resistance junction to ambient - - 120 c/w STN1A60/80 2/6
-50 0 50 100 150 0.1 1 10 v gt (t o c) v + gt1 v _ gt1 v + gt3 v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 2 4 6 8 10 12 60hz 50hz surge on-state current [a] time (cycles) 0.00.20.40.60.81.01.2 40 50 60 70 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.3 0.6 0.9 1.2 1.5 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 -1 10 0 10 1 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) 25 i + gt3 i gm (0.5a) 25 i + gt1 i _ gt1 i _ gt3 p g (av) (0.1w) p gm (1w) v gm (6v) gate voltage [v] gate current [ma] 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle STN1A60/80
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) i + gt3 i + gt1 i _ gt1 i _ gt3 junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 r (j-c) r (j-a) transient thermal impedance [ o c/w] time (sec) 4/6 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit a v 10 ? 6v r g a v 10 ? 6v r g a v 10 ? 6v r g test procedure test procedure test procedure a v 10 ? 6v r g test procedure STN1A60/80
dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h2.54 0.100 i2.54 0.100 j 0.33 0.48 0.013 0.019 to-92 package dimension 5/6 STN1A60/80 1. t1 2. gate 3. t2 a b c g e f d h j 1 2 3 i
dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h2.54 0.100 i2.54 0.100 j 0.33 0.48 0.013 0.019 k 4.5 5.5 0.177 0.216 l 7.8 8.2 0.295 0.323 m 1.8 2.2 0.070 0.086 n 1.3 1.7 0.051 0.067 to-92 package dimension, forming 1. t1 2. gate 3. t2 6/6 STN1A60/80 a e g h c b d f i j 1 2 3 k l m n
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