skm50gb063d ? by semikron rev. 2 ? 22.04.2010 1 semitrans ? 2 gb superfast npt-igbt modules skm50gb063d target data features ? npt = non punch-through igbt technology ? high short circuit capability, self limiting to 6 x ic ? pos. temp.-coeff. of vcesat ? isolated copper baseplate typical applications* ? switched mode power supplies ?ups ? three phase inverters for servo / ac motor speed control absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 600 v i c t j = 150 c t c =25c 70 a t c =75c 51 a i cnom 50 a i crm i crm = 2xi cnom 100 a v ges -20 ... 20 v t psc v cc = 300 v v ge 20 v v ces 600 v t j = 125 c 10 s t j -55 ... 150 c inverse diode i f t c =25c 75 a t c =80c 45 a i fnom 50 a i frm i frm = 2xi fnom 100 a i fsm t p = 10 ms, sin 180, t j =25c a t j -40 ... 150 c module i t(rms) t terminal <80c 200 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =50a v ge =15v chiplevel t j =25c 2.1 2.5 v t j = 125 c 2.4 2.8 v v ce0 t j =25c 1.05 1.3 v t j = 125 c 11.2v r ce v ge =15v t j =25c 21.0 24.0 m ? t j = 125 c 28.0 32.0 m ? v ge(th) v ge =v ce , i c = 1 ma 4.5 5.5 6.5 v i ces v ge =0v v ce =600v t j =25c 0.1 0.3 ma ma c ies v ce =25v v ge =0v f=1mhz 2.2 nf c oes f=1mhz nf c res f=1mhz 0.2 nf q g v ge =- 8 v...+ 20 v nc r gint t j =25c ? t d(on) v cc = 300 v i c =50a v ge =15v r g on =22 ? r g off =22 ? t j = 125 c 50 ns t r t j = 125 c 40 ns e on t j = 125 c 2.5 mj t d(off) t j = 125 c 300 n s t f t j = 125 c 30 ns e off t j = 125 c 1.8 mj r th(j-c) per igbt 0.5 k/w
skm50gb063d 2 rev. 2 ? 22.04.2010 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =50a v ge =0v chip t j =25c 1.35 1.60 v t j = 125 c 1.35 1.60 v v f0 t j =25c 1.05 1.2 v t j = 125 c 0.9 1 v r f t j =25c 6.0 8.0 m ? t j = 125 c 9.0 12.0 m ? i rrm i f =50a di/dt off =50a/s v ge =15v v cc = 300 v t j = 125 c 31 a q rr t j = 125 c 3.2 c e rr t j = 125 c 0.48 mj r th(j-c) per diode 1 k/w module l ce 30 nh r cc'+ee' terminal-chip t c =25c 0.65 m ? t c = 125 c 1m ? r th(c-s) per module 0.04 0.05 k/w m s to heat sink m6 3 5 nm m t to terminals m5 2.5 5 nm nm w 160 g semitrans ? 2 gb superfast npt-igbt modules skm50gb063d target data features ? npt = non punch-through igbt technology ? high short circuit capability, self limiting to 6 x ic ? pos. temp.-coeff. of vcesat ? isolated copper baseplate typical applications* ? switched mode power supplies ?ups ? three phase inverters for servo / ac motor speed control
skm50gb063d ? by semikron rev. 2 ? 22.04.2010 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skm50gb063d 4 rev. 2 ? 22.04.2010 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
skm50gb063d ? by semikron rev. 2 ? 22.04.2010 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may not be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. t he use of semikron products in life support appliances and syste ms is subject to prior specification and written approval by semikron . we therefore strongly recommend prior consultation of our pers onal. semitrans 2 gb
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