? semiconductor components industries, llc, 2009 august, 2009 ? rev. 2 1 publication order number: mmbt3416lt3/d MMBT3416LT3G general purpose amplifier npn silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v ebo 4.0 vdc collector current ? continuous i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://onsemi.com sot ? 23 (to ? 236) case 318 style 6 1 2 3 1 gp m marking diagram collector 3 1 base 2 emitter device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. MMBT3416LT3G sot ? 23 (pb ? free) 10,000/tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. gp = device code m = date code* = pb ? free package (note: microdot may be in either location)
MMBT3416LT3G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc emitter ? base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v cb = 25 vdc, i e = 0) i cbo1 ? 100 nadc emitter cutoff current (v eb = 5.0 vdc, i c = 0) i ebo ? 100 nadc on characteristics dc current gain (i c = 2.0 madc, v ce = 4.5 vdc) h fe 75 225 ? collector ? emitter saturation voltage (i c = 50 madc, i b = 3.0 madc) v ce(sat) ? 0.3 vdc base ? emitter saturation voltage (i c = 50 madc, i b = 3.0 madc) v be(sat) 0.6 1.3 vdc small ? signal characteristics collector cutoff current (v cb = 18 vdc, t a = 100 c) i cbo2 ? 15 adc small ? signal current gain (i c = 2.0 madc, v ce = 4.0 vdc, f = 1 khz) h fe 75 ? ? figure 1. turn ? on time figure 2. turn ? off time equivalent switching time test circuits *total shunt capacitance of test jig and connectors 10 k +3.0 v 275 c s < 4.0 pf* 10 k +3.0 v 275 c s < 4.0 p f 1n916 300 ns duty cycle = 2% +10.9 v -0.5 v <1.0 ns 10 < t 1 < 500 s duty cycle = 2% +10.9 v 0 -9.1 v < 1.0 ns t 1
MMBT3416LT3G http://onsemi.com 3 typical noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 3. noise voltage f, frequency (hz) 5.0 7.0 10 20 3.0 figure 4. noise current f, frequency (hz) 2.0 10 20 50 100 200 500 1k 2k 5k 10k 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 bandwidth = 1.0 hz r s = 0 i c = 1.0 ma 100 a e n , noise voltage (nv) i n , noise current (pa) 30 a bandwidth = 1.0 hz r s ? 10 a 300 a i c = 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1k 2k 5k 10 noise figure contours (v ce = 5.0 vdc, t a = 25 c) figure 5. narrow band, 100 hz i c , collector current ( a) 500k figure 6. narrow band, 1.0 khz i c , collector current ( a) 10 2.0 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 7. wideband i c , collector current ( a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the t ransistor referred to the input. (figure 3 = noise current of the t ransistor referred to the input. (figure 4 = boltzman?s constant (1.38 x 10 ? 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 3.0 db 4.0 db 6.0 db 10 db 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1 500k 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 1m 500k 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k bandwidth = 1.0 hz 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db
MMBT3416LT3G http://onsemi.com 4 typical static characteristics figure 8. dc current gain i c , collector current (ma) 400 0.004 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 9. collector saturation region i c , collector current (ma) 1.4 figure 10. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 mps390 4 figure 11. ?on? voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 mps3904 t j = 25 c i c = 1.0 ma 10 ma 100 ma figure 12. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 s duty cycle 2.0% i b = 500 a 400 a 300 a 200 a 100 a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 1.2 1.0 0.8 0.6 0.4 0.2 0 -2.4 0.8 0 -1.6 -0.8 1.0 2.0 5.0 10 20 50 1 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c)
MMBT3416LT3G http://onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 13. turn ? on time i c , collector current (ma) 300 figure 14. turn ? off time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 15. current ? gain ? bandwidth product i c , collector current (ma) figure 16. capacitance v r , reverse voltage (volts) figure 17. input impedance i c , collector current (ma) figure 18. output admittance i c , collector current (ma) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t h , output admittance ( mhos) oe h ie , input impedance (k ) 3.0 5.0 7.0 10 20 30 50 70 100 200 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 vdc t r 10 20 30 50 70 100 200 300 500 700 2.0 5.0 10 20 30 50 3.0 1.0 7.0 70 1 v cc = 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c f = 100 mhz v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.05 t j = 25 c f = 1.0 mhz c ib c ob 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 mps3904 h fe 200 @ i c = 1.0 ma v ce = 10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 1 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c mps3904 h fe 200 @ i c = 1.0 ma
MMBT3416LT3G http://onsemi.com 6 figure 19. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 10 0 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an ? 569) z ja(t) = r(t) r ja t j(pk) ? t a = p (pk) z ja(t) t 1 t 2 p (pk) figure 19a figure 19a. t j , junction temperature ( c) 10 4 -4 0 i c , collector current (na) figure 20. v ce , collector-emitter voltage (volts) 400 2.0 i c , collector current (ma) design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 19a. using the model and the device thermal response the normalized effective transient thermal resistance of figure 19 was calculated for various duty cycles. to find z ja(t) , multiply the value obtained from figure 19 by the steady state value r ja . example: the mps3904 is dissipating 2.0 w peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (d = 0.2) using figure 19 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore t = r(t) x p (pk) x r ja = 0.22 x 2.0 x 200 = 88 c. for more information, see an ? 569. the safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 20 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 19. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 -2 10 -1 10 0 10 1 10 2 10 3 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 v cc = 30 vdc i ceo i cbo and i cex @ v be(off) = 3.0 vdc t a = 25 c current limit thermal limit second breakdown limit 1.0 ms 10 s t c = 25 c 1.0 s dc dc 4.0 6.0 10 20 40 60 100 200 4.0 6.0 8.0 10 20 40 t j = 150 c 100 s
MMBT3416LT3G http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt3416lt3/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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