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p-to263-15-1 data sheet 1 1999-06-22 trilithic ? bts 780 gp 1overview features ? quad switch driver ? free configureable as bridge or quad-switch ? optimized for dc motor management applications ? ultra low r ds on @25 c: high-side switch: typ. 34 m w , low-side switch: typ. 15 m w ? high peak current capability of typ. 44 a @ 25 c ? low quiescent current of typ. 15 m a @ 25 c ? smd-power-package, optimized for small size and thermal performance ? load and gnd-short-circuit-protected ? operates up to 36 v ? 2-bit status flag diagnosis ? overtemperature shut down with hysteresis ? short-circuit detection and diagnosis ? open-load detection and diagnosis ? c-mos compatible inputs ? internal clamp diodes ? isolated sources for external current sensing ? over- and under-voltage detection with hysteresis ? fast low-side switches for pwm description the bts 780 gp is part of the trilithic family containing one double high-side switch and two low-side switches in one p-to263-15-1 package. silicon instead of heatsink becomes true the ultra low r ds on of this device avoids power dissipation. it saves costs in mechanical construction and mounting and increases the efficiency. type ordering code package bts 780 gp q67006-a9320 p-to263-15-1
bts 780 gp data sheet 2 1999-06-22 the high-side switches are produced in the smart sipmos ? technology. they are fully protected and contain the signal conditioning circuitry for diagnosis (the comparable standard high-side product is the bts 734l1 ). for minimized r ds on the two low-side switches are produced in s-fet logic level technology (the comparable standard product is the buz 100sl ). each drain of these three chips is mounted on separated leadframes (see figure 1 ). the sources of all four power transistors are connected to separate pins. so the bts 780 gp can be used in h-bridge configuration as well as in any other switch configuration. moreover, it is possible to add current sense resistors. all these features open a broad range of automotive and industrial applications.
bts 780 gp data sheet 3 1999-06-22 figure 1 pin configuration (top view) 2 sl1 sl1 1 aep02224 gl1 3 4 gnd gh1 5 6 st1 sh1 7 10 gnd gh2 9 st2 11 12 sh2 sl2 13 14 sl2 gl2 15 18 16 heat-slug 1 molding compound dl1 heat-slug 2 dhvs heat-slug 3 dl2 dhvs 8 17
bts 780 gp data sheet 4 1999-06-22 bold type: pin needs power wiring. pin definitions and functions pin no. symbol function 1, 2 sl1 source of low-side switch 1 3 gl1 gate of low-side switch 1 4, 9 gnd ground 5 gh1 gate of high-side switch 1 6 st1 status of high-side switch 1; open drain output 7 sh1 source of high-side switch 1 8, 17 dhvs drain of high-side switches and power supply voltage heat-slug 2 or heat-dissipator 10 gh2 gate of high-side switch 2 11 st2 status of high-side switch 2; open drain output 12 sh2 source of high-side switch 2 13, 14 sl2 source of low-side switch 2 15 gl2 gate of low-side switch 2 16 dl2 drain of low-side switch 2 heat-slug 3 or heat-dissipator 18 dl1 drain of low-side switch 1 heat-slug 1 or heat-dissipator
bts 780 gp data sheet 5 1999-06-22 figure 2 block diagram driver in out 0 0 l l 0 l 1 1 0 h l h h 1 1 r o1 diagnosis biasing and protection r i 1 r i2 dl2 sh1 dl1 12 7 16 18 1, 2 13, 14 sl2 sl1 r o2 10 4, 9 3 15 gl2 5 6 dhvs 8, 17 sh2 h 11 gl1 gnd gh2 gh1 st2 st1 aeb02225
bts 780 gp data sheet 6 1999-06-22 2 circuit description 2.1 input circuit the control inputs gh1,2 consist of ttl/cmos compatible schmitt-triggers with hysteresis. buffer amplifiers are driven by these stages and convert the logic signal into the form necessary for driving the power output stages. the inputs are protected by esd clamp-diodes. the inputs gl1 and gl2 are connected to a standard n-channel logic level power-mos gate. 2.2 output stages the output stages consist of an ultra low r ds on power-mos h-bridge. protective circuits make the outputs short-circuit proof to ground and load short-circuit proof. in h- bridge configuration, the d-mos body-diodes can be used for freewheeling when commutating inductive loads. if the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes (c.f. bts 734l1 datasheet for a detailed description). 2.3 short-circuit protection (valid only for the high-side switches) the outputs are protected against C output short circuit to ground, and C overload (load short circuit). an internal op-amp controls the drain-source-voltage of the hs-switches by comparing the ds-voltage-drop with an internal reference voltage. above this trippoint the op-amp reduces the output current depending on the junction temperature and the drop voltage. in the case of an overloaded high-side switch the corresponding status output is set to low. if the hs-switches are in off-state-condition internal resistors r o1,2 from sh1,2 to gnd pull the voltage at sh1,2 to low values. on each output pin sh1 and sh2 an output examiner circuit compares the output voltages with the internal reference voltage veo. this results in switching the corresponding status output to low if the source voltage in off-condition is higher then veo. in h-bridge condition this feature can be used to protect the low-side switches against short circuit to v s during the off-period. 2.4 overtemperature protection (valid only for the high-side-switches) the chip also incorporates an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low.
bts 780 gp data sheet 7 1999-06-22 2.5 under-voltage-lockout (uvlo) when v s reaches the switch-on voltage v uv on the ic becomes active with a hysteresis. the high-side output transistors are switched off if the supply voltage v s drops below the switch off value v uv off . 2.6 over-voltage-lockout (ovlo) when v s reaches the switch-off voltage v ov off the high-side output transistors are switched off with a hysteresis. the ic becomes active if the supply voltage v s drops below the switch-on value v ov on . 2.7 open load detection open load is detected by current measurement in the high-side switches during on- condition. if the output current drops below an internally fixed level (open circuit detection current) the error flag is set with a delay. 2.8 status flag the status flag outputs are open drain outputs with zener-diodes which require pull-up resistors, c.f. the application circuit on page 16 . various errors as listed in the table diagnosis are detected by switching the open drain outputs st1 or st2 to low.
bts 780 gp data sheet 8 1999-06-22 3 truthtable and diagnosis (valid only for the high-side-switches) flag gh1 gh2 sh1 sh2 st1 st2 remarks inputs outputs normal operation; identical with functional truth table 0 0 1 1 0 1 0 1 l l h h l h l h 1 1 1 1 1 1 1 1 stand-by mode switch1 active switch2 active both switches active open load at high-side switch1 open load at high-side switch2 0 0 1 0 1 x 0 1 x 0 0 1 z z h l h x l h x z z h 1 1 0 1 1 1 1 1 1 1 1 0 detected detected short circuit to dhvs at high-side switch1 short circuit to dhvs at high-side switch2 0 0 1 0 1 x 0 1 x 0 0 1 h h h l h x l h x h h h 0 1 1 1 1 1 1 1 1 0 1 1 detected detected overtemperature high-side switch1 0 1 x x l l x x 1 0 1 1detected overtemperature high-side switch2 x x 0 1 x x l l 1 1 1 0detected overtemperature both high-side switch 0 x 1 0 1 x l l l l l l 1 0 0 1 0 0 detected detected over- and under-voltage x x l l 1 1 not detected inputs: outputs: status: 0 = logic low z = output in tristate condition 1 = no error 1 = logic high l = output in sink condition 0 = error x = dont care h = output in source condition x = voltage level undefined
bts 780 gp data sheet 9 1999-06-22 4 characteristics note: maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. 4.1 absolute maximum ratings C40 c < t j < 150 c parameter symbol limit values unit remarks min. max. high-side-switches (pins dhvs, gh1,2 and sh1,2) supply voltage v s C 0.3 43 v C hs-drain current i dhs C 30 * a * internally limited hs-input current i gh C 2 2 ma pin gh1 and gh2 hs-input voltage v gh C 10 16 v pin gh1 and gh2 status output st status output current i st C 5 5 ma pin st1 and st2 low-side-switches (pins dl1,2, gl1,2 and sl1,2) break-down voltage v (br)dss 50 C v v gs = 0 v; i d 1 ma ls-drain current i dls C30aC ls-drain current i dls C50a t < 1 ms; n< 0.1 ls-input voltage v gl C 10 14 v pin gl1 and gl2 temperatures junction temperature t j C 40 150 cC storage temperature t stg C 50 150 cC
bts 780 gp data sheet 10 1999-06-22 note: in the operating range the functions given in the circuit description are fulfilled. 4.2 operating range parameter symbol limit values unit remarks min. max. supply voltage v s v uv off 36 v after v s rising above v uv on input voltages v gh C 0.3 15 v C input voltages v gl C 9 13 v C status output current i st 0 2 ma pin st1 or st2 hs-junction temperature t jhs C 40 150 cC ls-junction temperature t jls C 40 150 cC 4.3 thermal resistances (one hs-ls-path active) parameter symbol limit values unit remarks min. max. ls-junction case r thjcls C 0.5 k/w measured to pin 16 or 18 hs-junction case r thjchs C 0.5 k/w measured to pin 17 junction ambient r thja C 21 k/w measured on test pcb 1) 1) device on 50 mm 33 mm epoxy pcb with 6 cm 2 cooling-area in free air. c.f. pcb description on page 17
bts 780 gp data sheet 11 1999-06-22 4.4 electrical characteristics i sh1 = i sh2 = i sl1 = i sl2 = 0 a; C 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max. current consumption quiescent current i s C1530 m agh1 = gh2 = l v s = 13.2 v t j = 25 c quiescent current i s CC42 m agh1 = gh2 = l v s = 13.2 v supply current i s C24magh1 or gh2 = h supply current i s C48magh1 and gh2 = h under-voltage-lockout (uvlo) switch-on voltage v uv on C5.27v v s increasing switch-off voltage v uv off 3.5 4.2 5.0 v v s decreasing switch on/off hysteresis v uv hy C1Cv v uv on C v uv off over-voltage-lockout (ovlo) switch-off voltage v ov off 36 C 43 v v s increasing switch-on voltage v ov on 35CCv v s decreasing switch off/on hysteresis v ov hy C0.5Cv v ov off C v ov on
bts 780 gp data sheet 12 1999-06-22 high-side-switches 1, 2 static drain-source on-resistance r ds on h C 3440m w i sh =2a t j = 25 c static drain-source on-resistance r ds on h CC75m w i sh =2a leakage current i hslk CC10 m a v gh = v sh = 0 v body-diode forward-voltage @ i fh = 2 a v fh C0.81.2v t j = C 40 c v fh C0.71.1v t j = 25 c v fh C0.50.8v t j = 150 c clamp-diode leakage- current ( i fh + i sh ) i lkcl CC10ma i fh = 2 a short circuit to gnd initial peak sc current i scp 47 55 66 a t j = C 40 c initial peak sc current i scp 35 44 54 a t j = 25 c initial peak sc current i scp 29 36 45 a t j = 85 c initial peak sc current i scp 21 27 34 a t j = 150 c short circuit to v s off-state examiner- voltage v eo 234v v gh = 0 v output pull-down-resistor r o 4 1030k w C open circuit detection current i ocd 0.05 C 1.2 a C 4.4 electrical characteristics (contd) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; C 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max.
bts 780 gp data sheet 13 1999-06-22 switching times switch-on-time; to 90% v sh t on C 130 300 m s12 w resistive load v s = 13.2 v switch-off-time; to 10% v sh t off C 260 450 m s12 w resistive load v s = 13.2 v control inputs gh 1, 2 h-input voltage threshold v ghh C2.83.3vC l-input voltage threshold v ghl 1.5 2.3 C v C input voltage hysteresis v ghhy C0.5CvC h-input current i ghh 20 50 90 m a v gh = 5 v l-input current i ghl 42550 m a v gh = 0.4 v input series resistance r i 2.5 4.2 6 k w C zener limit voltage v ghz 5.4 6.1 C v i gh = 1.6 ma low-side-switches 1, 2 static drain-source on-resistance r ds on l C 1520m w i sl =2a v gl = 5 v t j = 25 c static drain-source on-resistance r ds on l CC35m w i sh =2a leakage current i lkl C < 1 100 m a v gl = 0 v v ds = 18 v body-diode forward-voltage @ i fl = 2 a v fl C0.81.2v t j = C 40 c v fl C0.71.1v t j = 25 c v fl C0.50.8v t j = 150 c 4.4 electrical characteristics (contd) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; C 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max.
bts 780 gp data sheet 14 1999-06-22 control inputs gl1, 2 gate-threshold-voltage v gl(th) 0.6 1.6 2.4 v v gl = v dsl i dl = 130 m a transconductance g fs C5Cs v dsl = 20 v ; i dl = 20 a status flag output st low output voltage v stl C0.30.6v i st = 1.6 ma leakage current i stlk C0.42 m a v st = 5 v zener-limit-voltage v stz 5.4 6.1 C v i st = 1.6 ma thermal shutdown thermal shutdown junction temperature t jsd 160 C 190 cC thermal switch-on junction temperature t jso 150 C 180 cC temperature hysteresis d t C10C c d t = t jsd C t jso note: shutdown temperatures are guaranteed by design 4.4 electrical characteristics (contd) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; C 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max.
bts 780 gp data sheet 15 1999-06-22 figure 3 test circuit hs-source-current named during short circuit named during open circuit named during leakage-cond. i sh1,2 i scp i ocd i hslk 10 5 driver in out 0 0 l l 0 l 1 1 0 h l h h 1 1 diagnosis biasing and protection r i 1 r i2 dl2 sh1 dl1 12 7 16 18 1, 2 13, 14 sl2 sl1 4, 9 3 15 gl2 6 dhvs 8, 17 sh2 h 11 gl1 gnd gh2 gh1 st2 st1 v s =12 v c l 100 m f c s 470 nf i fh1, 2 i s i sl1 i sl2 i sh2 r o1 r o2 i dl2, i lkl i dl1, i lkl i sh1 v dsh2 - v fh2 v dsh1 - v fh1 v eo1 v dsl1 - v fl1 v uvon v uvoff v gl2 v gl(th)2 v gl1 v gl(th)1 v gh2 v gh1 v st2 v stl2 v stz2 v st1 v stl1 v stz1 v eo2 v dsl2 - v fl2 aes0226
bts 780 gp data sheet 16 1999-06-22 figure 4 application circuit driver in out 0 0 l l 0 l 1 1 0 h l h h 1 1 r o1 diagnosis biasing and protection r i 1 r i2 m v cc dl2 sh1 dl1 12 7 16 18 1, 2 13, 14 sl2 sl1 c q 22 m f m p r o2 st1 do1 1n4001 10 gh2 gnd 4, 9 10 k w r s 3 gl1 15 gl2 tle 4278g watchdog resest q r wd r q 100 k w 5 6 d c s 10 m f gnd v s =12 v i c d 47 n f dhvs 8, 17 sh2 h d1 z39 r q 100 k w 11 r s 10 k w st2 gh1 aes02227 gnd
bts 780 gp data sheet 17 1999-06-22 5 test-pcb the printed circuit board is made of 1.5 mm thick standard fr4 material with double sided copper plating of 35 m m thickness. the 28 mm 21 mm cooling area is through- connected by a 1.1 mm 1.1 mm pattern of vias with 0.5 mm diameter. figure 5 test-pcb outline 6 solder pad for reflow soldering hl lh tm3 28 21 bts78xlpmini1.1 bts780 str application board for high-current-motorbridge dl1 sl1 dhvs sl1 dl2 34 50 bottom top (component side) dimensions in mm aea02732 21.6 8.4 16 9.5 0.4 0.8 4 1 p-to263-15-1 (plastic transistor single outline package ) hlg09223 dimensions in mm
bts 780 gp data sheet 18 1999-06-22 7 package outlines a 8? max. b a 0.25 m 0.1 typical 0.2 21.6 8.3 1) 8.2 1) (15) 0.2 9.25 0.3 1 0...0.15 0.8 0.1 0.1 1.27 4.4 b 0.5 0.1 0.3 2.7 4.7 0.5 0.05 1) 0.1 all metal surfaces tin plated, except area of cut. 2.4 14x1.4 8.4 1) 8.18 0.15 1 0.2 0.15 5.56 4.8 1) p-to263-15-1 (plastic transistor single outline package ) gpt09151 sorts of packing package outlines for tubes, trays etc. are contained in our data book package information. dimensions in mm smd = surface mounted device

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