TLP741J 2002-09-25 1 toshiba photocoupler gaas ired & photo-thyristor TLP741J office machine household use equipment solid state relay switching power supply the toshiba TLP741J consists of a photo ? thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic dip package. peak off ? state voltage: 600 v (min.) trigger led current: 10 ma (max.) on ? state current: 150 ma (max.) ul recognized: ul1577, file no. e67349 bsi approved: bs en60065: 1994 certificate no. 6617 bs en60950: 1992 certificate no. 7366 isolation voltage: 4000 v rms (min.) option (d4) type vde approved: din vde0884 / 08,87 certificate no. 65640 maximum operating insulation voltage: 630 v pk highest permissible over voltage: 6000 v pk (note) when a vde0884 approved type is needed, please designate the ?option (d4)? 7.62 mm pich 10.16 mm pich standard type (lf2) type creepage distance: 7.0 mm (min.) 8.0 mm (min.) clearance: 7.0 mm (min.) 8.0 mm (min.) insulation thickness: 0.5 mm (min.) 0.5 mm (min.) pin configuration (top view) 1 : anode 2 : cathode 3 : n.c. 4 : cathode 5 : anode 6 : gate 5 6 4 2 1 3 unit in mm toshiba 11 ? 7b1 weight: 0.35 g
TLP741J 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 60 ma forward current derating (ta 39c) ? i f / c 0.7 ma / c peak forward current (100 s pulse, 100 pps) i fp 1 a power dissipation p d 100 mw power dissipation derating (ta 25c) ? p d / c 1.0 mw / c reverse voltage v r 5 v led junction temperature t j 125 c peak forward voltage (r gk = 27 k ? ) v drm 600 v peak reverse voltage (r gk = 27 k ? ) v rrm 600 v on state current i t(rms) 150 ma on state current derating (ta 25c) ? i t / c 2.0 ma / c peak on state current (100s pulse, 120 pps) i tp 3 a peak one cycle surge current i tsm 2 a peak reverse gate voltage v gm 5 v power dissipation p d 150 mw power dissipation derating (ta 25c) ? p d / c 2.0 mw / c detector junction temperature t j 100 c storage temperature range t stg 55~125 c operating temperature range t opr 55~100 c lead soldering temperature (10 s) t sol 260 c total package power dissipation p t 250 mw total package power dissipation derating (ta 25c) ? p t / c 3.3 mw / c isolation voltage (ac, 1 min., r.h. 60%) bv s 4000 v rms recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v ac D D 240 v ac forward current i f 15 20 25 ma operating temperature t opr 25 D 85 c gate to cathode resistance r gk D 10 27 k ? gate to cathode capacity c gk D 0.01 0.1 f
TLP741J 2002-09-25 3 individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma 1.0 1.15 1.3 v reverse current i r v r = 5 v D D 10 a led capacitance c t v = 0, f = 1 mhz D 30 D pf ta = 25c D 10 5000 na off state current i drm v ak = 600 v r gk = 27 k ? ta = 85c D 1 150 a ta = 25c D 10 5000 na reverse carrent i rrm v ka = 600 v r gk = 27 k ? ta = 85c D 1 150 a on state voltage v tm i tm = 100 ma D 0.9 1.3 v holding current i h r gk = 27 k ? D 0.2 D ma off state dv / dt dv / dt v ak = 420 v, r gk = 27 k ? D 10 D v/s anode to gate D 20 D detector capacitance c j v = 0, f = 1 mhz gate to cathode D 350 D pf coupled characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit trigger led current i ft v ak = 6 v, r gk = 27 k ? D 5 10 ma turn on time t on i f = 30 ma, v aa = 50 v r gk = 27 k ? D 10 D s coupled dv / dt dv / dt v s = 500 v, r gk = 27 k ? 500 D D v / s capacitance (input to output) c s v s = 0, f = 1 mhz D 0.8 D pf isolation resistance r s v s = 500 v 110 12 10 14 D ? ac, 1 minute 4000 D D ac, 1 second, in oil D 10000 D v rms isolation voltage bv s dc, 1 minute, in oil D 10000 D v dc
TLP741J 2002-09-25 4 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 0 20 60 100 120 60 40 20 100 0 -20 40 80 80 i t (rms) ? ta ambient temperature ta (c) r.m.s. on-state current i t (rms) (ma) 0 20 60 100 120 150 100 50 250 0 -20 40 80 200 i fp ? d r duty cycle ratio d r allowable pulse forward current i fp (ma) 3000 10 3 300 1000 500 3 10 0 30 100 50 3 10 -1 3 10 -2 10 -3 pulse width Q 100s ta = 25c i f ? v f forward voltage v f (v) forward current i f (ma) 100 0.1 0.6 1.8 0.3 1 0.5 1.4 1.6 1.0 1.2 0.8 3 10 5 30 50 ta = 2 5 c i fp ? v fp pulse forward voltage v fp (v) pulse forward current i fp (ma) 1000 1 0.6 3 10 5 2.2 2.6 1.4 1.8 1.0 30 100 50 300 500 pulse width Q 10s repetitive frequency = 100hz ta = 25c ? v f / ? ta ? i f forward current i f (ma) forward voltage temperature coefficient ? v f / ? ta (mv / c) -3.2 -0.4 0.1 -2.8 -2.4 30 50 -2.0 -1.6 -1.2 -0.8 3 5 10 0.3 0.5 1
TLP741J 2002-09-25 5 i ft ? r gk gate-cathode resistance r gk (k ? ) trigger led current i ft (ma) 100 2 1 50 200 30 10 30 50 3 5 10 100 5 ta = 2 5 c v ak = 6v r l = 100 ? i h ? r gk gate-cathode resistance r gk (k ? ) holding current i h (ma) 5 0.1 1 3 200 1 0.5 30 50 3 5 10 100 0.3 ta = 25c t on ? i f forward current i f (ma) turn-on time t on (s) 10 20 40 10 30 0 0 20 30 ta = 25c r l = 100 ? v aa = 50v r gk = 10k ? 27k ? i ft ? ta ambient temperature ta (c) trigger led current i ft (ma) 20 40 80 5 20 3 0 10 60 100 v ak = 6v r l = 100 ? r gk = 10k ? 27k ? i h ? ta ambient temperature ta (c) holding current i h (ma) 20 40 80 0.7 0.1 0 0.3 60 100 0.5 r gk = 10k ? 27k ? dv / dt ? r gk gate-cathode resistance r gk (k ? ) critical rate of rise of off-state voltage dv / dt (v / s) 200 5 1 100 50 100 30 10 30 50 3 5 10 ta = 2 5 c v a k = 200v 400v dv / dt ? c gk gate-cathode capacitance c gk (f) critical rate of rise of off-state voltage dv / dt (v / s) 0.003 0.01 50 500 5 0.001 100 0.005 300 30 10 ta = 85c v ak = 400v r gk = 27k ?
TLP741J 2002-09-25 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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