HVM306 silicon epitaxial planar diode for lowpass circuit preliminary rev. 1 jun. 1992 features high capacitance ratio. (n = 10min) low series resistance. low cost. mpak package is suitable for high density surface mounting and high speed assembly. ordering information type no. laser mark package code HVM306 t9 mpak pin arrangement 1 anode
2 anode
3 cathode (top view) 2 1 3 absolute maximum ratings (ta = 25c) item symbol value unit reverse voltage v r 30 v junction temperature tj 125 c storage temperature tstg C55 to +125 c
HVM306 2 electrical characteristics (ta = 25c) item symbol min typ max unit test condition reverse current i r (1) 10nav r = 30v i r (2) 100 v r = 30v, ta= 60c capacitance c 2 29.4 34.3 pf v r = 2v, f = 1mhz c 25 2.67 3.02 v r = 25v, f = 1mhz capacitance ratio n 10.0 c 2 /c 25 series resistance r s 0.75 w c = 9pf, f = 470mhz in out v t lowpass circuit 0 0.2 0.4 0.6 0.8 1.0 10 10 ? forward voltage v (v) f forward current i (ma) f 10 ? 10 ? 10 1.0 10 10 ? ? ? fig.1 forward current vs. forward voltage
HVM306 3 0102030 40 50 10 3 10 ? reverse voltage v (v) r reverse current i (na) r 10 ? 10 ? 10 10 10 1 2 ? fig.2 reverse current vs. reverse voltage reverse voltage v (v) r 1 10 100 10 1 capacitance c (pf) 0.5 f = 1mhz 30 fig.3 capacitance vs. reverse voltage (1)
HVM306 4 reverse voltage v (v) r 1 10 60 50 40 30 20 10 0 capacitance c (pf) 0.5 f = 1mhz 30 fig.4 capacitance vs. reverse voltage (2) 1 10 0.0 0.4 0.6 0.8 1.0 reverse voltage v (v) r series resistance r ( ) w 0.5 30 s 0.2 f = 470mhz fig.5 series resistance vs. reverse voltage
HVM306 5 0.5 1 10 ?.5 ?.0 ?.5 0.0 reverse voltage v (v) r l f = d (logc)/ d (logv r ) ?.0 30 fig.6 linearity factor vs. reverse voltage package dimensions 0.16 0 ?0.10 + 0.10 ?0.06 0.4 + 0.10 ?0.05 0.95 0.95 1.9 2.8 + 0.3 ?0.1 2.8 + 0.2 ?0.6 0.65 + 0.1 ?0.3 1.5 0.65 + 0.1 ?0.3 1.1 + 0.2 ?0.1 0.3 t 9 laser mark 21 3 hitachi code jedec code eiaj code weight (g) mpak(1) sc-59a 0.011 1 2 3 anode anode cathode unit: mm
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