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hal 80 0 programmable linear hall effect sensor edition oct. 20, 1999 6251-441-1ds prelimina r y d a t a sheet mic r onas m i c r o n a s
hal 800 2 micronas contents page section title 3 1. introduction 3 1.1. major applications 3 1.2. features 4 1.3. marking code 4 1.4. operating junction temperature range (t j ) 4 1.5. hall sensor package codes 4 1.6. solderability 4 1.7. pin connections and short descriptions 5 2. functional description 5 2.1. general function 7 2.2. digital signal processing and eeprom 9 2.3. calibration procedure 9 2.3.1. general procedure 10 2.3.2. calibration of angle sensor 11 3. specifications 11 3.1. outline dimensions 11 3.2. dimensions of sensitive area 11 3.3. position of sensitive area 12 3.4. absolute maximum ratings 12 3.5. recommended operating conditions 13 3.6. electrical characteristics 14 3.7. magnetic characteristics 14 3.8. typical characteristics 17 4. application notes 17 4.1. application circuit 17 4.2. temperature compensation 18 4.3. ambient temperature 18 4.4. emc and esd 19 5. programming of the sensor 19 5.1. definition of programming pulses 19 5.2. definition of the telegram 21 5.3. telegram codes 22 5.4. number formats 23 5.5. register information 23 5.6. programming information 24 6. data sheet history
hal 800 micronas 3 programmable linear hall effect sensor 1. introduction the hal 800 is an universal magnetic field sensor with a linear output based on the hall effect. the ic is designed and produced in sub-micron cmos technol- ogy and can be used for angle or distance measure- ments if combined with a rotating or moving magnet. the major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at b = 0 mt), and output voltage range are programma- ble in a non-volatile memory. the sensor has a ratio- metric output characteristic, which means that the out- put voltage is proportional to the magnetic flux and the supply voltage. the hal 800 features a temperature compensated hall plate with choppered offset compensation, an a/d converter, digital signal processing, a d/a converter with output driver, an eeprom memory with redun- dancy and lock function for the calibration data, a serial interface for programming the eeprom, and protec- tion devices at all pins. the internal digital signal pro- cessing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. the hal 800 is programmable by modulating the sup- ply voltage. no additional programming pin is needed. the easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input sig- nal (like mechanical angle, distance or current). an individual adjustment of each sensor during the cus- tomers manufacturing process is possible. with this calibration procedure the tolerances of the sensor, the magnet, and the mechanical positioning can be com- pensated in the final assembly. in addition, the temperature compensation of the hall ic can be fit to all common magnetic materials by pro- gramming first and second order temperature coeffi- cients of the hall sensor sensitivity. this enables an operation over the full temperature range with high accuracy. the calculation of the individual sensor characteristics and the programming of the eeprom memory can easily be done with a pc and the application kit from micronas. the hal 800 eases logistic because its characteristics can be programmed in a wide range. therefore, one hall ic type can be used for various applications. the sensor is designed for hostile industrial and auto- motive applications and operates with typically 5 v supply voltage in the ambient temperature range from ? 1.1. major applications due to the sensor?s versatile programming characteris- tics, the hal 800 is the optimal system solution for applications such as: ? contactless potentiometers, ? rotary position measurement, ? linear position detection, ? magnetic field and current measurement. 1.2. features ? high precision linear hall effect sensor with ratiometric output ? multiple programmable magnetic characteristics with non-volatile memory ? digital signal processing ? temperature characteristics programmable for matching all common magnetic materials ? programmable clamping voltages ? programming with a modulation of the supply voltage ? lock function and redundancy for eeprom memory ? operates from ? 40 c up to 150 c ambient temperature ? operates from 4.5 v up to 5.5 v supply voltage ? operates with static magnetic fields and dynamic magnetic fields up to 2 khz ? choppered offset compensation ? overvoltage and reverse-voltage protection at all pins ? magnetic characteristics extremely robust against mechanical stress ? short-circuit protected push-pull output ? emc optimized design
hal 800 4 micronas 1.3. marking code the hal 800 has a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. 1.4. operating junction temperature range (t j ) a: t j = ? 40 c to +170 c k: t j = ? 40 c to +140 c e: t j = ? 40 c to +100 c c: t j = 0 c to +100 c the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). the relationship between ambient temperature (t a ) and junction temperature is explained in section 4.3. on page 18 . 1.5. hall sensor package codes example: HAL800ut-a ty p e : 8 0 0 package: to-92ut temperature range: t j = ? 40 c to +170 c hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ? ordering codes for hall sensors ? . 1.6. solderability package to-92ut: according to iec68-2-58 during soldering reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environ- ments as extreme as 40 c and 90% relative humidity. 1.7. pin connections and short descriptions fig. 1?1: pin configuration type temperature range a k e c hal 800 800a 800k 800e 800c halxxxpa-t temperature range: a, k, e, or c package: ut for to-92ut ty p e : 8 0 0 pin no. pin name type short description 1v dd in supply voltage and programming pin 2 gnd ground 3 out out push pull output 1 2 3 v dd out gnd
hal 800 micronas 5 2. functional description 2.1. general function the hal 800 is a monolithic integrated circuit which provides an output voltage proportional to the mag- netic flux through the hall plate and proportional to the supply voltage. the external magnetic field component perpendicular to the branded side of the package generates a hall voltage. this voltage is converted to a digital value, processed in the digital signal processing unit (dsp) according to the eeprom programming, converted to an analog voltage with ratiometric behavior, and stabi- lized by a push-pull output transistor stage. the func- tion and the parameters for the dsp are detailed explained in section 2.2. on page 7 . the setting of the lock register disables the program- ming of the eeprom memory for all time. this regis- ter cannot be reset. as long as the lock register is not set, the output characteristic can be adjusted by modifying the eeprom registers. the ic is addressed by modulat- ing the supply voltage (see fig. 2 ? 1) . in the supply voltage range from 4.5 v up to 5.5 v, the sensor gener- ates an analog output voltage. after detecting a com- mand, the sensor reads or writes the memory and answers with a digital signal on the output pin. the analog output is switched off during the communica- tion. internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. the circuitry also rejects offset shifts due to mechanical stress from the package. the non-volatile memory is equipped with redundant eeprom cells. in addition, the sensor ic is equipped with devices for overvoltage and reverse volt- age protection at all pins. fig. 2 ? 1: programming with v dd modulation fig. 2 ? 2: HAL800 block diagram v out (v) 5 6 7 8 v dd (v) hal 800a v dd gnd out analog v dd digital internally temperature oscillator switched a/d digital d/a analog out v dd gnd supply eeprom memory lock control digital stabilized supply and protection devices dependent bias protection devices hall plate converter signal processing converter output level detection output 100 ?
hal 800 6 micronas fig. 2 ? 3: details of eeprom and digital signal processing mode register filter tc 6 bit tcsq 5 bit sensi- 14 bit voq 11 bit clamp- 10 bit 11 bit lock 1 bit 1 bit range 2 bit eeprom memory a/d converter digital filter multiplier adder limiter d/a converter digital signal processing adc-readout register 14 bit digital lock control tivity low clamp- high output micronas registers 0 1 2 3 4 5 ? 40 ? 20 0 20 40 mt v b v out clamp-high = 4 v sensitivity = 0.15 v oq = 2.5 v clamp-low = 1 v range = 30 mt fig. 2 ? 4: example for output characteristics 0 1 2 3 4 5 ? 150 ? 100 ? 50 0 50 100 150 mt v b v out clamp-high = 4.5 v sensitivity = ? 0.45 v oq = ? 0.5 v clamp-low = 0.5 v range = 150 mt fig. 2 ? 5: example for output characteristics
hal 800 micronas 7 2.2. digital signal processing and eeprom the dsp is the major part of this sensor and performs the signal conditioning. the parameters for the dsp are stored in the eeprom registers. the details are shown in fig. 2 ? 3 . terminology: sensitivity: name of the register or register value sensitivity: name of the parameter the eeprom registers consist of three groups: group 1 contains the registers for the adaption of the sensor to the magnetic system: mode for selecting the magnetic field range and filter frequency, tc and tcsq for temperature characteris- tics of the magnetic sensitivity. group 2 contains the registers for defining the output characteristics: sensitivity, voq, clamp-low, and clamp-high. the output characteristic of the sensor is defined by these 4 parameters (see fig. 2 ? 4 and fig. 2 ? 5 for examples). ? the parameter v oq (output quiescent voltage) cor- responds to the output voltage at b = 0 mt. ? the parameter sensitivity is defined as: ? the output voltage can be calculated as: the output voltage range can be clamped by setting the registers clamp-low and clamp-high in order to enable failure detection (such as short-circuits to v dd or gnd). group 3 contains the micronas registers and lock for the locking of all registers. the micronas registers are programmed and locked during production and are read-only for the customer. these registers are used for oscillator frequency trimming, a/d converter offset compensation, and several other special settings. the adc converts positive or negative hall voltages (operates with magnetic north and south poles at the branded side of the package) in a digital value. this signal is filtered in the digital filter and is readable in the adc-readout register as long as the lock bit is not set. note: the adc-readout values and the resolution of the system depends on the filter frequency. positive values accord to a magnetic north pole on the branded side of the package. fig. 2 ? 6 and fig. 2 ? 7 show typi- cal adc-readout values for the different magnetic field ranges and filter frequencies. ? 6000 ? 4000 ? 2000 0 2000 4000 6000 ? 200 ? 150 ? 100 ? 50 0 50 100 150 200 mt b adc- readout filter = 500 hz range 150 mt range 90 mt range 75 mt range 30 mt fig. 2 ? 6: typical adc-readout versus magnetic field for filter = 500 hz ? v out ? b sensitivity = v out sensitivity b + v oq ? 1500 ? 1000 ? 500 0 500 1000 1500 ? 200 ? 150 ? 100 ? 50 0 50 100 150 200 mt b adc- readout range 150 mt range 90 mt range 75 mt range 30 mt filter = 2 khz fig. 2 ? 7: typical adc-readout versus magnetic field for filter = 2 khz
hal 800 8 micronas range the range bits are the two lowest bits of the mode register; they define the magnetic field range of the a/d converter. filter the filter bit is the highest bit of the mode register; it defines the ? 3 db frequency of the digital low pass fil- ter tc and tcsq the temperature dependence of the magnetic sensitiv- ity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. the adaption is done by programming the tc (temperature coefficient) and the tcsq registers (quadratic temperature coeffi- cient). thereby, the slope and the curvature of the magnetic sensitivity can be matched to the magnet and the sensor assembly. as a result, the output volt- age characteristic can be fixed over the full tempera- ture range. the sensor can compensate for linear tem- perature coefficients in the range from about -2900 ppm/k up to 700 ppm/k and quadratic coefficients from about -5 ppm/k 2 to 5 ppm/k 2 . please refer to section 4.2. on page 17 for the recommended settings for different linear temperature coefficients. sensitivity the sensitivity register contains the parameter for the multiplier in the dsp. the sensitivity is programma- ble between -4 and 4. for v dd = 5 v the register can be changed in steps of 0.00049. sensitivity = 1 corre- sponds to an increase of the output voltage by v dd if the adc-readout increases by 2048. for all calculations, the digital value from the magnetic field of the a/d converter is used. this digital informa- tion is readable from the adc-readout register. voq the voq register contains the parameter for the adder in the dsp. v oq is the output voltage without external magnetic field (b = 0 mt) and programmable from ? v dd up to v dd . for v dd = 5 v the register can be changed in steps of 4.9 mv. note: if v oq is programmed to a negative voltage, the maximum output voltage is limited to: for calibration in the system environment, a 2-point adjustment procedure (see section 2.3.) is recom- mended. the suitable sensitivity and v oq values for each sensor can be calculated individually by this pro- cedure. clamping voltage the output voltage range can be clamped in order to detect failures like shorts to v dd or gnd. the clamp-low register contains the parameter for the lower limit. the lower clamping voltage is program- mable between 0 v and v dd /2. for v dd = 5 v the reg- ister can be changed in steps of 2.44 mv. the clamp-high register contains the parameter for the higher limit. the higher clamping voltage is pro- grammable between 0 v and v dd . for v dd = 5 v in steps of 2.44 mv. lock by setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. warning: this register cannot be reset! adc-readout this 14-bit register delivers the actual digital value of the applied magnetic field before the signal process- ing. this register can be read out and is the basis for the calibration procedure of the sensor in the system environment. range magnetic field range 0 ? 30 mt...30 mt 1 ? 75 mt...75 mt 2 ? 90 mt...90 mt 3 ? 150 mt...150 mt filter ? 3 db frequency 02 khz 1 500 hz ? v out * 2048 ? adc-readout * v dd sensitivity = v outmax = v oq + v dd
hal 800 micronas 9 2.3. calibration procedure 2.3.1. general procedure for calibration in the system environment, the applica- tion kit from micronas is recommended. it contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input of the register values. in this section, programming of the sensor with this programming tool is explained. please refer to section 5. on page 19 for information about program- ming without this tool. for the individual calibration of each sensor in the cus- tomer application, a two point adjustment is recom- mended (see fig. 2 ? 8 for an example). when using the application kit, the calibration can be done in three steps: step 1: input of the registers which need not be adjusted individually the magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, and low and high clamping voltage are given for this appli- cation. therefore, the values of the following registers should be identical for all sensors of the customer application. ? filter (according to the maximum signal frequency) ? range (according to the maximum magnetic field at the sensor position) ? tc and tcsq (depends on the material of the magnet and the other temperature dependencies of the application) ? clamp-low and clamp-high (according to the application requirements) write the appropriate settings into the hal 800 regis- ters. after writing, the information is stored in an internal ram and not in the eeprom. it is valid until switching off the supply voltage. if the values should be perma- nently stored in the eeprom, the ? store ? command must be used before switching off the supply voltage. step 2: calculation of v oq and sensitivity the calibration points 1 and 2 can be set inside the specified range. the corresponding values for v out1 and v out2 result from the application requirements. for highest accuracy of the sensor, calibration points near the minimum and maximum input signal are rec- ommended. the difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 v. set the system to calibration point 1 and read the reg- ister adc-readout. the result is the value adc- readout1. now, set the system to calibration point 2, read the register adc-readout again, and get the value adc-readout2. with these values and the target values v out1 and v out2 , for the calibration points 1 and 2, respectively, the values for sensitivity and v oq are calculated as: this calculation has to be done individually for each sensor. now, write the calculated values for sensitivity and v oq for adjusting the sensor. use the ? store ? command for permanently storing the eeprom registers. the sensor is now calibrated for the customer application. however, the program- ming can be changed again and again if necessary. step 3: locking the sensor the last step is activating the lock function with the ? lock ? command. the sensor is now locked and does not respond to any programming or reading com- mands. warning: this register cannot be reset! low clamping voltage v out1,2 high clamping voltage v out1 ? v out2 adc-readout1 ? adc-readout2 sensitivity = v dd 2048 * adc-readout1 * sensitivity * v dd 2048 v oq = v out1 ?
hal 800 10 micronas 2.3.2. calibration of angle sensor the following description explains the calibration pro- cedure using an angle sensor as an example. the required output characteristic is shown in fig. 2 ? 8 . ? the angle range is from ? 25 to 25 ? temperature coefficient of the magnet: ? 500 ppm/k step 1: input of the registers which need not to be adjusted individually the register values for the following registers are given for all applications: ? filter select the filter frequency: 500 hz ? range select the magnetic field range: 30 mt ? tc for this magnetic material: 1 ? tcsq for this magnetic material: 12 ? clamp-low for our example: 0.5 v ? clamp-high for our example: 4.5 v enter these values in the software, and use the ? write ? command for writing the values in the regis- ters. step 2: calculation of v oq and sensitivity there are 2 ways to calculate the values for v oq and sensitivity manual calculation: set the system to calibration point 1 (angle 1 = ? 25 ) and read the register adc-readout. for our exam- ple, the result is adc-readout1 = ? 2500. now, set the system to calibration point 2 (angle 2 = 25 ), and read the register adc-readout again. for our example, the result is adc-readout2 = + 2350. with these measurements and the targets v out1 = 4.5 v and v out2 = 0.5 v, the values for sensitivity and v oq are this calculation has to be done individually for each sensor. automatic calibration: use the menu calibrate from the pc software and enter the values 4.5 v for v out1 and 0.5 v for v out2 . set the system to calibration point 1 (angle 1 = ? 25 ), hit the button read adc-readout1, set the system to calibration point 2 (angle 2 = 25 ), hit the button read adc-readout2, and hit the button calculate. the soft- ware will then calculate the appropriate v oq and sen- sitivity. now, write the calculated values into the hal 800 for programming the sensor and use the ? store ? com- mand for permanently storing the eeprom registers. step 3: locking the sensor the last step is activating the lock function with the ? lock ? command. the sensor is now locked and does not respond to any programming or reading com- mands. warning: this register cannot be reset! 4.5 v ? 0.5 v ? 2500 ? 2350 sensitivity = 5v 2048 * = ? 0.3378 v oq = 4.5 v ? 2048 ? 2500 * (? 0.3378) * 5 v = 2.438 v 0 1 2 3 4 5 ? 30 ? 20 ? 10 0 10 20 30 v angle v out clamp-high = 4.5 v clamp-low = 0.5 v calibration point 2 calibration point 1 fig. 2 ? 8: example for output characteristics
hal 800 micronas 11 3. specifications 3.1. outline dimensions fig. 3 ? 1: plastic transistor single outline package (to-92ut) weight approximately 0.14 g dimensions in mm a mechanical tolerance of 50 m applies to all dimensions where no tolerance is explicitly given. 3.2. dimensions of sensitive area 0.25 mm x 0.25 mm 3.3. position of sensitive area sensitive area y 4.06 0.1 x2 4.05 0.1 13.0 min. 1.27 1.27 (2.54) 123 0.42 0.3 1.5 0.36 branded side 0.8 45 0.55 0.48 spgs0014-3-a/1e x1 2.1 0.2 0.75 0.2 to-92ut ? x1 ? x2 ? / 2 0.2 mm y = 1.5 mm 0.2 mm
hal 800 12 micronas 3.4. absolute maximum ratings stresses beyond those listed in the ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 8.5 8.5 v v dd supply voltage 1 ? 14.4 1) 2) 14.4 1) 2) v ? i dd reverse supply current 1 ? 50 1) ma i z current through protection device 1 or 3 ? 300 4) 300 4) ma v out output voltage 3 ? 5 6) ? 5 6) 8.5 3) 14.4 3) 2) v v out ? v dd excess of output voltage over supply voltage 3,1 2 v i out continuous output current 3 ? 10 10 ma t sh output short circuit duration 3 ? 10 min t s storage temperature range ? 65 150 c t j junction temperature range ? 40 ? 40 170 5) 150 c c 1) as long as t jmax is not exceeded 2) t < 10 minutes (v ddmin = ? 15 v for t < 1min, v ddmax = 16 v for t < 1min) 3) as long as t jmax is not exceeded, output is not protected to external 14 v-line (or to ? 14 v) 4) t < 2 ms 5) t < 1000h 6) internal protection resistor = 100 ? symbol parameter pin no. min. typ. max. unit v dd supply voltage 1 4.5 5 5.5 v i out continuous output current 3 ? 1 ? 1ma r l load resistor 3 4.5 ?? k ? c l load capacitance 3 0.33 10 1000 nf
hal 800 micronas 13 3.6. electrical characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 5.5 v, after programming, as not otherwise specified in conditions. typical characteristics for t j = 25 c and v dd = 5 v. symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 7 10 ma t j = 25 c, v dd = 4.5 v to 8.5 v i dd supply current over temperature range 1710ma v ddz overvoltage protection at supply 1 17.5 20 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 31719.5vi o = 10 ma, t j = 25 c, t = 20 ms resolution 3 12 bit ratiometric to v dd 1) e a accuracy error over all 3 ? 202%r l = 4.7 k ? (% of supply voltage) 3) inl non-linearity of output voltage over temperature 3 ? 1 0 1 % % of supply voltage 3) e r ratiometric error of output over temperature (error in v out / v dd ) 3 ? 101% ? v out1 - v out2 ? > 2 v during calibration procedure ? v outcl accuracy of output voltage at clamping low voltage over temperature range 3 ? 45 0 45 mv r l = 4.7 k ? , v dd = 5 v ? v outch accuracy of output voltage at clamping high voltage over temperature range 3 ? 45 0 45 mv r l = 4.7 k ? , v dd = 5 v v outh output high voltage 3 4.65 4.8 v v dd = 5 v, ? 1 ma i out 1ma v outl output low voltage 3 0.2 0.35 v v dd = 5 v, ? 1 ma i out 1ma f adc internal adc frequency ? 120 128 140 khz t j = 25 c f adc internal adc frequency over temperature range ? 110 128 150 khz v dd = 4.5 v to 8.5 v t r(o) response time of output 3 ? 2 1 4 2 ms ms 3 db filter frequency = 500 hz 3 db filter frequency = 2 khz c l = 10 nf, time from 10% to 90% of final output voltage for a steplike signal b step from 0 mt to b max t d(o) delay time of output 3 0.1 0.5 ms t pod power-up time (time to reach stabilized output voltage) 3 2 5 3 ms 3 db filter frequency = 500 hz 3 db filter frequency = 2 khz 90% of v out bw small signal bandwidth ( ? 3db) 3 ? 2 ? khz b ac < 10 mt; 3 db filter frequency = 2 khz v outn noise output voltage pp 3 ? 36mv 2) magnetic range = 90 mt r out output resistance over recom- mended operating range 3 ? 110 ? v outl v out v outh r thja to-92ut thermal resistance junction to soldering point ?? 150 200 k/w 1) output dac full scale = 5 v ratiometric, output dac offset = 0 v, output dac lsb = v dd /4096 2) peak-to-peak value exceeded: 5% 3) if more than 50% of the selected magnetic field range are used
hal 800 14 micronas 3.7. magnetic characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 5.5 v, after programming, as not otherwise specified in conditions. typical characteristics for t j = 25 c and v dd = 5 v. 3.8. typical characteristics symbol parameter pin no. min. typ. max. unit test conditions b offset magnetic offset 3 ? 101mtb = 0 mt, i out = 0 ma, t j = 25 c ? b offset / ? t magnetic offset change due to t j ? 15 0 15 t/k b = 0 mt, i out = 0 ma b hysteresis magnetic hysteresis ? 20 0 20 t range = 30 mt, filter = 500 hz sr magnetic slew rate 3 ? 12 50 ? mt/ms filter frequency = 500 hz filter frequency = 2 khz n meff magnetic rms broadband noise 3 ? 10 ? t bw = 10 hz to 2 khz f cflicker corner frequency of 1/f noise 3 ? 20 hz b = 0 mt f cflicker corner frequency of 1/frms noise 3 ? 100 hz b = 65 mt, t j = 25 c ? 20 ? 15 ? 10 ? 5 0 5 10 15 20 ? 15 ? 10 ? 50 5101520 v ma v dd i dd t a = ? 40 c t a = 25 c t a =150 c fig. 3 ? 2: typical current consumption versus supply voltage 0 2 4 6 8 10 ? 50 0 50 100 150 200 c ma t a i dd v dd = 5 v fig. 3 ? 3: typical current consumption versus ambient temperature
hal 800 micronas 15 0 2 4 6 8 10 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 1.5 ma ma i out i dd t a = 25 c v dd = 5 v fig. 3 ? 4: typical current consumption versus output current ? 40 ? 35 ? 30 ? 25 ? 20 ? 15 ? 10 ? 5 0 5 10 100 1000 10000 hz db f signal v out ? 3 filter: 500 hz filter: 2 khz fig. 3 ? 5: typical output voltage versus signal frequency ? 1 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 0.6 0.8 1.0 45678 v % v dd e r v out /v dd = 0.82 v out /v dd = 0.66 v out /v dd = 0.5 v out /v dd = 0.34 v out /v dd = 0.18 fig. 3 ? 6: typical ratiometric error versus supply voltage 0 20 40 60 80 100 120 ? 50 0 50 100 150 200 c % t a 1/sensitivity tc = 16, tcsq = 8 tc = 0, tcsq = 12 tc = ? 20, tcsq = 12 tc = ? 31, tcsq = 0 fig. 3 ? 7: typical 1/sensitivity versus ambient temperature
hal 800 16 micronas ? 1 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 0.6 0.8 1.0 ? 50 0 50 100 150 200 c mt t a b offset tc = 16, tcsq = 8 tc = 0, tcsq = 12 tc = ? 20, tcsq = 12 fig. 3 ? 8: typical magnetic offset versus ambient temperature ? 1 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 0.6 0.8 1.0 ? 40 ? 20 0 20 40 mt % b inl range = 30 mt fig. 3 ? 9: typical nonlinearity versus magnetic field
hal 800 micronas 17 4. application notes 4.1. application circuit for emc protection, it is recommended to add each a ceramic 4.7 nf capacitor between ground and the sup- ply voltage respectively the output voltage pin. in addi- tion, the input of the controller unit should be pulled- down with a 4.7 kohm resistor and a ceramic 4.7 nf capacitor. please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12 v for 100 ms. all components connected to the v dd line at this time must be able to resist this voltage. fig. 4 ? 1: recommended application circuit 4.2. temperature compensation the relation between the temperature coefficient of the magnet and the corresponding tc and tcsq codes for a linear compensation is given in the following table. in addition to the linear change of the magnetic field with temperature, the curvature can be adjusted, too. for that purpose, tc and tcsq have to be changed to combinations that are not given in the table. please contact micronas for more detailed infor- mation. temperature coefficient of magnet (ppm/k) tc tcsq 700 29 8 600 26 9 500 23 9 400 21 9 300 18 9 200 16 9 100 14 10 out v dd gnd 4.7 nf HAL800 4.7 k ? c 4.7 nf 4.7 nf 01110 ? 100 8 10 ? 200 6 11 ? 300 4 11 ? 400 3 12 ? 500 1 12 ? 600 ? 113 ? 700 ? 313 ? 800 ? 514 ? 900 ? 614 ? 1000 ? 815 ? 1100 ? 915 ? 1200 ? 11 16 ? 1300 ? 13 17 ? 1400 ? 14 17 ? 1500 ? 15 18 ? 1600 ? 17 18 ? 1700 ? 18 18 ? 1800 ? 19 19 ? 1900 ? 20 19 ? 2000 ? 22 20 ? 2100 ? 23 21 ? 2200 ? 24 21 ? 2300 ? 25 22 ? 2400 ? 26 22 ? 2500 ? 27 23 ? 2600 ? 28 23 ? 2700 ? 29 24 ? 2800 ? 30 24 ? 2900 ? 31 26 temperature coefficient of magnet (ppm/k) tc tcsq
hal 800 18 micronas 4.3. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). t j = t a + ? t at static conditions, the following equation is valid: ? t = i dd * v dd * r thja for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the appli- cation. for v dd = 5.5 v, r th = 200 k/w and i dd = 10 ma the temperature difference ? t = 11 k. for all sensors, the junction temperature t j is speci- fied. the maximum ambient temperature t amax can be calculated as: t amax = t jmax ?? t 4.4. emc and esd the hal 800 is designed for a stabilized 5 v supply. interferences and disturbances conducted along the 12 v onboard system (product standards din40839 part 1 or iso 7637 part 1) are not relevant for these applications. for applications with disturbances by capacitive or inductive coupling on the supply line or radiated distur- bances, the application circuit shown in fig. 4 ? 1 is rec- ommended. applications with this arrangement passed the emc tests according to the product standards din 40839 part 3 (electrical transient transmission by capacitive or inductive coupling) and part 4 (radiated distur- bances). please contact micronas for the detailed investigation reports with the emc and esd results.
hal 800 micronas 19 5. programming of the sensor 5.1. definition of programming pulses the sensor is addressed by modulating a serial tele- gram on the supply voltage. the sensor answers with a serial telegram on the output pin. the bits in the serial telegram have a different bit time for the v dd -line and the output. the bit time for the v dd -line is defined through the length of the sync bit at the beginning of each telegram. the bit time for the output is defined through the acknowledge bit. a logical 0 is coded as no voltage change within the bit time. a logical 1 is coded as a voltage change between 50% and 80% of the bit time. after each bit a voltage change occurs. 5.2. definition of the telegram each telegram starts with the sync bit (logical 0), 3 bits for the command (com), the command parity bit (cp), 4 bits for the address (adr), and the address parity bit (ap). there are 3 kinds of telegrams: ? write a register (see fig. 5 ? 2 ) after the ap bit follow 14 data bits (dat) and the data parity bit (dp). if the telegram is valid and the command has been processed the sensor answers with an acknowledge bit (logical 0) on the output. ? read a register (see fig. 5 ? 3 ) after evaluating this command the sensor answers with the acknowledge bit, 14 data bits, and the data parity bit on the output. ? programming the eeprom cells (see fig. 5 ? 4 ) after evaluating this command the sensor answers with the acknowledge bit. after the delay time t w the supply voltage rises up to the programming voltage. fig. 5 ? 1: definition of logical 0 and 1 bit t r t f t p0 t p0 logical 0 v ddh v ddl or t p0 logical 1 v ddh v ddl or t p0 t p1 t p1 table 5 ? 1: telegram parameters symbol parameter pin min. typ. max. unit remarks v ddl supply voltage for low level during programming 155.66v v ddh supply voltage for high level during programming 16.88.08.5v t r rise time 1 0.05 ms t f fall time 1 0.05 ms t p0 bit time on v dd 13.43.53.6mst p0 is defined through the sync bit t pout bit time on output pin 3 4 6 8 ms t pout is defined through the acknowledge bit t p1 voltage change for logical 1 1, 3 50 65 80 % % of t p0 or t pout v ddprog supply voltage for programming the eeprom 1 11.95 12 12.1 v t prog programming time for eeprom 1 95 100 105 ms t rp rise time of programming voltage 1 0.2 0.5 1 ms t fp fall time of programming voltage 1 0 1 ms t w delay time of programming voltage after acknowledge 10.50.71ms
hal 800 20 micronas fig. 5 ? 2: telegram for coding a write command fig. 5 ? 3: telegram for coding a read command fig. 5 ? 4: telegram for coding the eeprom programming sync com cp adr ap dat dp acknowledge v dd v out write sync com cp adr ap dat dp acknowledge v dd v out read sync com cp adr ap t prog acknowledge v dd v out erase, prom, lock, and locki t rp t fp t w v ddprog
hal 800 micronas 21 5.3. telegram codes sync bit each telegram starts with the sync bit. this logical 0 pulse defines the exact timing for t p0 . command bits (com) the command code contains 3 bits and is a binary number. ta b l e 5 ? 2 shows the available commands and the corresponding codes for the hal 800 . command parity bit (cp) this parity bit is 1, if the number of zeros within the 3 command bits is uneven. the parity bit is 0, if the number of zeros is even. address bits (adr) the address code contains 4 bits and is a binary num- ber. ta b l e 5 ? 3 shows the available addresses for the hal 800 registers. address parity bit (ap) this parity bit is 1, if the number of zeros within the 4 address bits is uneven. the parity bit is 0, if the num- ber of zeros is even. data bits (dat) the 14 data bits contain the register information. the registers use different number formats for the data bits. these formats are explained in section 5.4. in the write command the last bits are valid. if for example the tc register (6 bits) is written, only the last 6 bits are valid. in the read command the first bits are valid. if for example the tc register (6 bits) is read, only the first 6 bits are valid. data parity bit (dp) this parity bit is 1, if the number of zeros within the binary number is even. the parity bit is 0, if the number of zeros is uneven. table 5 ? 2: available commands command code explanation read 2 read a register write 3 write a register prom 4 program all nonvolatile registers (except the lock bits) erase 5 erase all nonvolatile registers (except the lock bits) locki 6 lock micronas lockable register lock 7 lock the whole device and switch permanently to the analog-mode please note: the micronas lock bit (locki) has already been set during production and cannot be reset.
hal 800 22 micronas 5.4. number formats binary number: the most significant bit is given as first, the least signif- icant bit as last digit. example: 101001 represents 41 decimal. signed binary number: the first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). example: 0101001 represents +41 decimal 1101001 represents ? 41 decimal two-complementary number: the first digit of positive numbers is 0, the rest of the number is a binary number. negative numbers start with 1. in order to calculate the absolute value of the number, you have to calculate the complement of the remaining digits and to add 1. example: 0101001 represents +41 decimal 1010111 represents ? 41 decimal micronas registers (read only for customers) table 5 ? 3: available register addresses parameter code data bits format customer remark clamp-low 1 10 binary read/write/program low clamping voltage clamp-high 2 11 binary read/write/program high clamping voltage voq 3 11 two compl. binary read/write/program sensitivity 4 14 signed binary read/write/program mode 5 3 binary read/write/program range and filter parameters see ta b le 5 ? 4 for details lockr 6 1 binary lock lock bit adc-readout 7 14 two compl. binary read tc 11 6 signed binary read/write/program tcsq 12 5 binary read/write/program parameter code data bits format remark offset 8 4 two compl. binary adc offset adjustment foscad 9 5 binary oscillator frequency adjustment special 13 6 special settings imlock 14 1 binary lock bit for the micronas registers
hal 800 micronas 23 5.5. register information clamp-low ? the register range is from 0 up to 1023. ? the register value is calculated by: clamp-high ? the register range is from 0 up to 2047. ? the register value is calculated by: voq ? the register range is from ? 1024 up to 1023. ? the register value is calculated by: sensitivity ? the register range is from ? 8192 up to 8191. ? the register value is calculated by: mode ? the register range is from 0 up to 7 and contains the settings for filter and range adc-readout ? this register is read only. ? the register range is from ? 8192 up to 8191. tc and tcsq ? the tc register range is from ? 31 up to 31, ? the tcsq register range is from 0 up to 31. please refer section 4.2. on page 17 for the recom- mended values. 5.6. programming information if you want to change the content of any register (except the lock registers) you have to write the desired value into the corresponding ram register at first. if you want to permanently store the value in the eeprom, you have to send an erase command first and a prom command afterwards. the address within the erase and prom command is not important. erase and prom acts on all registers in parallel. if you want to change all registers of the hal 800 , you can send all writing commands one after each other and send one erase and prom command at the end. low clamping voltage v dd * 2048 clamp-low = high clamping voltage v dd * 2048 clamp-high = v oq v dd * 1024 voq = sensitivity 2048 sensitivity = table 5 ? 4: parameters for the mode register mode filter ? 3 db frequency range magnetic field range 00 2 khz 0 ? 30 mt...30 mt 10 2 khz 1 ? 75 mt...75 mt 20 2 khz 2 ? 90 mt...90 mt 30 2 khz 3 ? 150 mt...150 mt 4 1 500 hz 0 ? 30 mt...30 mt 5 1 500 hz 1 ? 75 mt...75 mt 6 1 500 hz 2 ? 90 mt...90 mt 7 1 500 hz 3 ? 150 mt...150 mt
all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. by this publication, micronas gmbh does not assume responsibil- ity for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh. hal 800 24 micronas micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany order no. 6251-441-1ds 6. data sheet history 1. advance information: ? hal 800 programmable lin- ear hall effect sensor, aug. 24, 1998, 6251-441-1ai. first release of the advance information. 2. final data sheet: ? hal 800 programmable linear hall effect sensor, oct. 20, 1999, 6251-441-1ds. first release of the final data sheet.

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