product specifications semiconductor technology, inc. 3131 s. e. jay street, stuart, fl 34997 type: BUZ53A ph: (561) 283 - 4500 fax: (561) 286 - 8914 website: http://www.semi - tech - inc.com case outline: to - 204aa (to - 3) high voltage power mosfet n - channel absolute maximum rating: drain ? source voltage v dss 1000 vdc drain ? gate voltage v dgr 1000 vdc drain current ? continuous i d 2.6 adc drain current ? pulsed i dm 10 adc gate ? source voltage v gs 20 vdc power dissipation p d 78 watts i nductive current i l adc operating and storage temperature t j & t stg - 55 to +150 c lead temperature from case t l c electrical characteristics ta @ 25 c parameters symbol test conditions min typ max unit drain source breakdown voltage bv dss v gs = 0v , i d = .25ma 1000 vdc gate threshold voltage v gs(th) v ds = v gs , i d = 1.0ma 2.1 4.0 vdc gate ? body leakage current i gss v gs = 20v, v ds = 0v 100 na zero gate voltage drain current i dss v ds = 1000v, v gs = 0v, v ds = 1000v, v gs = 0v, t j = 125 c 0. 25 1.0 ma ma on state drain current i d(on) adc drain source on - resistance r ds(on) v gs = 10v, i d = 1.5a 5.0 ohms forward transconductance g fs v ds = 25v, i d = 1.5a 0.7 mhos drain - source on voltage v ds(on) vdc drain - source - on voltage v ds( on) vdc input capacitance c iss 2100 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v gs = 0v, v ds = 25v, f = 1 mhz 55 pf page 1 of 2
type: BUZ53A drain source diode characteristics symbol min typ max units forward on voltage i f = 5.2a, v gs = 0v v sd 1.3 vdc reverse recovery time i f = 2.6a t rr 2000 ns reverse recovery charge di f /dt = 100a/ m s, v gs = 0v, v r = 100v q rr 15 nc total gate charge q g nc gate ? source charge q gs nc gate ? drain charge q gd nc switching characteristics symbol min typ max units turn - on time t on turn - off time t off delay time (turn on) t d(on) 45 ns rise time t r 60 ns delay time (turn off) t d(off) 140 ns fall time v dd = 30v, i d = 2.0a v gs = 10v, r gs = 50 w rgen = 50 w t f 80 ns thermal characteristics symbol units junction to case r q jc c/w junction to ambient r q ja c/w internal package inductance symbol typ max units interna l drain inductance l d 5.0 nh internal source inductance l s 12.5 nh page 2 of 2
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