2001-12-06 page 1 IDP30E60 idb30e60 preliminary data fast switching emcon diode product summary v rrm 600 v i f 30 a v f 1.45 v t jmax 175 c feature 600 v emcon technology fast recovery soft switching low reverse recovery charge low forward voltage 175c operating temperature easy paralleling p-to220-3.smd p-to220-2-2. pin 1 pin 2 pin 3 c a - nc c a marking d30e60 d30e60 type package ordering code IDP30E60 p-to220-2-2. q67040-s4488 idb30e60 p-to220-3.smd q67040-s4376 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 600 v continous forward current t c =25c t c =90c i f 52.3 34.9 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 117 maximum repetitive forward current t c =25c, t p limited by t jmax , d =0.5 i frm 81 power dissipation t c =25c t c =90c p tot 142.9 80.9 w operating and storage temperature t j , t stg -55...+175 c soldering temperature 1.6mm(0.063 in.) from case for 10s t s 255 c
2001-12-06 page 2 IDP30E60 idb30e60 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1.05 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - 35 62 - electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics reverse leakage current v r =600v, t j =25c v r =600v, t j =150c i r - - - - 50 2500 a forward voltage drop i f =30a, t j =25c i f =30a, t j =150c v f - - 1.45 1.45 2 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2001-12-06 page 3 IDP30E60 idb30e60 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics reverse recovery time v r =400v, i f =30a, d i f /d t =1000a/s, t j =25c v r =400v, i f =30a, d i f /d t =1000a/s, t j =125c v r =400v, i f =30a, d i f /d t =1000a/s, t j =150c t rr - - - 126 171 178 - - - ns peak reverse current v r =400v, i f = 30a, d i f /d t =1000a/s, t j =25c v r =400v, i f =30a, d i f /d t =1000a/s, t j =125c v r =400v, i f =30a, d i f /d t =1000a/s, t j =150c i rrm - - - 19 22 24 - - - a reverse recovery charge v r =400v, i f =30a, d i f /d t =1000a/s, t j =25c v r =400v, i f =30a, d i f /d t =1000a/s, t j =125c v r =400v, i f =30a, d i f /d t =1000a/s, t j =150c q rr - - - 1100 1950 2150 - - - nc reverse recovery softness factor v r =400v, i f =30a, d i f /d t =1000a/s, t j =25c v r =400v, i f =30a, d i f /d t =1000a/s, t j =125c v r =400v, i f =30a, d i f /d t =1000a/s, t j =150c s - - - 4 4.6 4.8 - - -
2001-12-06 page 4 IDP30E60 idb30e60 preliminary data 2 diode forward current i f = f( t c ) parameter: t j 175c 25 50 75 100 125 c 175 t c 0 5 10 15 20 25 30 35 40 45 a 55 i f 1 power dissipation p tot = f ( t c ) parameter: t j 175 c 25 50 75 100 125 c 175 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 150 p tot 3 typ. diode forward current i f = f ( v f ) 0 0.5 1 1.5 v 2.5 v f 0 10 20 30 40 50 60 70 a 90 i f -55c 25c 100c 150c 4 typ. diode forward voltage v f = f ( t j ) -60 -20 20 60 100 c 160 t j 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v 2 v f 15a 30a 60a
2001-12-06 page 5 IDP30E60 idb30e60 preliminary data 5 typ. reverse recovery time t rr = f ( d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 100 150 200 250 300 350 400 ns 500 t rr 60a 30a 15a 6 typ. reverse recovery charge q rr = f ( d i f /d t ) parameter: v r = 400v, t j = 125 c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 1000 1200 1400 1600 1800 2000 2200 nc 2600 q rr 15a 30a 60a 7 typ. reverse recovery current i rr = f ( d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 6 8 10 12 14 16 18 20 22 a 26 i rr 60a 30a 15a 8 typ. reverse recovery softness factor s = f(400) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 3 4 5 6 7 8 9 10 12 s 60a 30a 15a
2001-12-06 page 6 IDP30E60 idb30e60 preliminary data 9 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w IDP30E60 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2001-12-06 page 7 IDP30E60 idb30e60 preliminary data to-220-2-2 symbol [mm] [inch] min max min max a 9.70 10.10 0.3819 0.3976 b 15.30 15.90 0.6024 0.6260 c 0.65 0.85 0.0256 0.0335 d 3.55 3.85 0.1398 0.1516 e 2.60 3.00 0.1024 0.1181 f 9.00 9.40 0.3543 0.3701 g 13.00 14.00 0.5118 0.5512 h 17.20 17.80 0.6772 0.7008 j 4.40 4.80 0.1732 0.1890 k 0.40 0.60 0.0157 0.0236 l m n p 1.10 1.40 0.0433 0.0551 t u v w x 0.00 0.40 0.0000 0.0157 0.26 typ. 6.6 typ. 0.51 typ. 13.0 typ. 7.5 typ. 0.295 typ. 2.4 typ. 0.095 typ. 4.4 typ. 0.173 typ. 2.54 typ. 0.1 typ. dimensions 0.41 typ. 1.05 typ. a u v w g m t j f l x p d c k n b h e
2001-12-06 page 8 IDP30E60 idb30e60 preliminary data symbol [mm] [inch] minmaxminmax a 9.80 10.00 0.3858 0.3937 b c 1.25 1.75 0.0492 0.0689 d 0.95 1.15 0.0374 0.0453 e f 0.72 0.85 0.0283 0.0335 g h 4.30 4.50 0.1693 0.1772 k 1.28 1.40 0.0504 0.0551 l 9.00 9.40 0.3543 0.3701 m 2.30 2.50 0.0906 0.0984 n p 0.00 0.20 0.0000 0.0079 q 3.30 3.90 0.1299 0.1535 r s 1.70 2.50 0.0669 0.0984 t 0.50 0.65 0.0197 0.0256 u v w x y z 9.40 typ. 0.3701 typ. 16.15 typ. 0.6358 typ. 6.43 typ. 0.2532 typ. 4.60 typ. 0.1811 typ. 10.8 typ. 0.4252 typ. 1.35 typ. 0.0532 typ. 14.1 typ. 0.5551 typ. 8 max 8 ma x dimensions 2.54 typ. 0.1 typ. 5.08 typ. 0.2 typ. 1.3 typ. 0.0512 typ. to-220-3-45 (p-to220smd)
2001-12-06 page 9 IDP30E60 idb30e60 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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