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mil -prf -19500/565b 21 may 1999 superseding mil -s -19500/565a 7 october 1987 performance specification sheet semiconductor device, field effect transistor, p -channel, silicon types 2n6895, 2n6896, 2n6897, and 2n6898 jan, jantx, jantxv and jans this specification is approved for use by all depart - ments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for a p -channel, enhancement -mode, mosfet, power transistor. four levels of product assurance are provided for each encapsulated device type as specified in mil-prf-19500. 1.2 physical dimensions . see figures 1 and 2, to -205af (formerly to-39) for 2n6895, to -204aa for 2n6896 and 2n6897; and to -204ae for 2n6898 (formerly to ? 3). 1.3 maximum ratings . unless otherwise specified, t a = +25 c. type p t 1 / t c = +25 c p t t a = +25 c v ds v dg v gs i d1 2 / t c = +25 c i d2 2 / t c = +100 c i s i dm t j and t stg 2n6895 2n6896 2n6897 2n6898 w 8.33 60 100 150 w 0.6 4 4 4 v dc 100 v dc 100 v dc 20 a dc 1.16 6.0 12 25 a dc 0.74 3.8 7.6 15.8 a dc 1.16 6.0 12 25 a( pk) 5 20 30 60 c -55 to +150 1 / derate linearly t c > +25 c ? 2n6895 (0.067 w/ c), 2n6896 (0.48 w/ c), 2n6897 (0.8 w/ c), 2n6898 (1.2 w/ c). 2 / derate above t c = +25 c according to the formula k rated p i d ) ( = where p(rated) = p t ? (t c = -25) (w/ c) watts; k = max r ds(on) at t j =+150 c. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. this is an advance copy of the dated document. the final document from defense automated printing service may be slightly different in format due to electronic conversion processes. actual technical content will be the same. the documentation and process conversion measures necessary to comply with this revision shall be completed by 21 august 1999 inch-pound beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: commander, defense supply center columbus, attn: dscc-vat, 3990 east broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/565b 2 1.4 primary electrical characteristics at t c = +25 c. type min v (br)dss v gs = 0 v i d = -1.0 ma dc v gs( th )1 v ds 3 v gs i d = -1.0 ma dc max i dss1 v gs = 0 v max r ds(on) 1 / v gs = -10 v dc r q jc v ds = 80 percent of rated v ds t j = +25 c at i d1 t j = +150 c at i d2 2n6895 2n6896 2n6897 2n6898 v dc -100 v dc min max -2.0 -4.0 m a dc -1.0 ohm 3.65 0.6 0.3 0.2 ohm 6.15 1.67 0.69 0.24 c/w 15.0 2.083 1.25 0.83 1 / pulsed (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.1.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconduc tor devices, general specification for. standard military mil -std -750 - test methods for semiconductor devices. (unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the standardization documents order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of this specification and the references cited herein, the text of this specification takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.3 associated specification . the individual item requirements shall be in accordance with mil-prf-19500 and as specified herein.
mil-prf-19500/565b 3 figure 1. physical dimensions for 2n6895 (to -205af).
mil-prf-19500/565b 4 ltr 1 / dimensions notes inches millimeters min max min max cd .305 .335 7.75 8.51 ch .160 .180 4.07 4.57 hd .335 .370 8.51 9.40 h .009 .041 0.23 1.04 j .028 .034 0.71 0.86 2 k .029 .045 0.74 1.14 3 ld .016 .021 0.41 0.53 7,8 ll .500 .750 12.70 19.05 7,8 ls .200 tp 5.08 tp 6 lu .016 .019 0.41 0.48 7,8 l 1 .050 1.27 7,8 l 2 .250 6.35 7,8 p .100 2.54 5 q .050 1.27 4 r .010 0.25 9 a 45 tp 45 tp 6 notes: 1. dimensions are in in ches. metric equivalents are given for general information only. 2. beyond radius (r) maximum, j shall be held for a minimum length of 0.011 (0.028 mm). 3. dimension k measured from maximum hd. 4. outline in this zone is not controlled. 5. dimension cd sh all not vary more than 0.010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane 0.054 + 0.001, -0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 7. lu applies between l 1 and l 2 . ld applies between l 2 and l minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all three leads. 9. radius (r) applies to both inside corners of tab. 10. drain is electrically connected to the case. figure 1. physical dimensions for 2n6895 (to ? 205af) continued.
mil-prf-19500/565b 5 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. these dimensions should be measured at points 0.050 inch (1.27 mm) and 0.055 inch (1.40 mm) below seating plane. measurement will be made at the seating plane. 4. the seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall. 5. mounting holes shall be deburred on the seating plane side. 6. drain is electrically connected to the case. figure 2. physical dimensions of transistor 2n6896,2n6897, 2n6898 (to -204aa and to-204) . 1 / dimensions symbol inches millimeters notes min max min max cd .875 22.23 ch .250 .360 6.35 9.14 hr .495 .525 12.57 13.34 hr 1 .131 .188 3.33 4.78 ht .060 .135 1.52 3.43 ld .038 .043 0.97 1.09 ll .312 .500 7.92 12.70 ll 1 .050 1.27 mhd .151 .161 3.84 4.09 mhs 1.177 1.197 29.90 30.40 ps .420 .440 10.67 11.18 3, 5 ps 1 .205 .225 5.21 5.72 3, 5 s 1 .655 .675 16.64 17.15
mil-prf-19500/565b 6 3. 2 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf- 19500 and as follows: c - - - - - - - - - - - - - - - - - - - - - coulomb. 3.3 interface requirements and physical dimensions . the interface requirements and physical dimensions shall be as specified in mil -prf -19500, mil-hdbk-6100 and figures 1 and 2, to -205af (formerly to-39) for 2n6895, to -204aa for 2n6896 and 2n6897; and to -204ae for 2n6898 herein. 3.3.1 lead material and finish . lead material shall be kovar, alloy 52 for t0-205af, and a copper core or plated core is permitted lead finish shall be solderable in accordance with mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.3.2 internal construction . multiple chip construction shall not be permitted. 3.4 marking . marking shall be in accordance with mil-prf-19500. at the option of the manufacturer, marking of country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.5 electrostatic discharge protection . the devices covered by this specification require electrostatic protection. 3.5.1 handling . mos devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. the following handling practices shall be followed: a. devices shall be handled on benches with conductive handling devices. b. ground test equipment, too ls, and personnel handling devices. c. do not handle devices by the leads. d. store devices in conductive foam or carriers. e. avoid use of plastic, rubber, or silk in mos areas. f. maintain relative humidity above 50 percent if practical. g. care sha ll be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. gate must be terminated to source, r 100 k, whenever bias voltage is to be applied drain to source. 3.6 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i. 3.7 electrical test requirements . the electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.8 qualification . devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.2 ). 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500 and table ii herein. alternate flow is allowed for qualification inspection in accordance with figure 4 of mil-prf-19500.
mil-prf-19500/565b 7 4.2.1 group e inspection . group e inspection shall be conducted in accordance with mil-prf-19500. 4.3 screening (jans, jantx, and jantxv levels only) . screening shall be in accordance with table iv of mil-prf-19500 and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of mil -prf -19500) measurement jans level jantx and jantxv levels 3 test condition g test condition g 1 / 2 / method 3470 (see 4.5.4) method 3470 (see 4.5.4) 1 / method 3161 (see 4.5.3) method 3161 (see 4.5.3) 9 i gss1, i dss1 , gate stress test (see 4.5.5), subgroup 2 of table i herein gate stress test (see 4.5.5), subgroup 2 of table i herein 10 method 1042, test condition b method 1042, test condition b 11 subgroup 2 of table i herein; i gss1 , i dss1 , r ds(on)1 , v gs( th )1 , d i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. d i dss1 = .2 m a dc or 100 percent of initial value, whichever is greater. subgroup 2 of table i herein. i gss1 , i dss1 , r ds(on)1 , v gs( th )1 12 method 1042, test condition a and test condition c. (see 4.3.1) method 1042, test condition a 13 subgroups 2 and 3 of table i herein; d i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. d i dss1 = .2 m a dc or 100 percent of initial value, whichever is greater. d r ds(on)1 = 20 percent of initial value. d v gs( th )1 = 20 percent of initial value. subgroup 2 of table i herein; d i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. d i dss1 = .2 m a dc or 100 percent of initial value, whichever is greater. d r ds(on)1 = 20 percent of initial value. d v gs( th )1 = 20 percent of initial value. 1 / shall be performed anytime before screen 9. 2 / method 3470 is optional if performed as a sample in group a, subgroup 5. 4.3.1 power burn-in . power burn-in conditions are as follows: mil-std-750, method 3161, condition c, t a = +25 c, -5 c, +10 c, v ds = 10 v min.; i d adjusted to meet a junction temperature of 140 c, - 5 c, + 10 c, t = 240 hours. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500. alternate flow is allowed for quality conformance inspection in accordance with figure 4 of mil-prf-19500. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. electrical measurements (end-points) shall be in accordance with the inspections of table ii herein. 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table via (jans) and table vib (jan, jantx, and jantxv) of mil-prf-19500 and herein. electrical measurements (end-points) shall be in accordance with the inspections of table ii herein.
mil-prf-19500/565b 8 4.4.2.1 group b inspection table via (jans) of mil-prf-19500 . subgroup method conditions 3 1051 test condition g. 4 1042 test condition d; 2,000 cycles. the heating cycle shall be 1 minute minimum. 2n6895 , v ds = -10 v dc, p t = 4 w at t a = +25 c 3 c. 2n6897, 2n6898, v ds = -20 v dc, p t = 0.6 w at t a = +25 c 3 c. 5 1042 accelerated steady-state ope ration life; test condition c; t a = + 25 c, - 5 c, + 10 c, v ds = 10 v min.; i d adjusted to meet a junction temperature of 140 c, - 0 c, + 10 c, t = 240 hours. 5 2037 bond strength (al-au die interconnects only); test conditi on a. 6 3161 see 4.5.2. 4.4.2.2 group b inspection, table vib (jantx and jantxv) of mil-prf-19500 . subgroup method condition 2 1051 test condition g, 25 cycles. 3 1042 test condition d, 2,000 cycles. the heating cycle shall be 1 minute mini mum. 4.4.3 group c inspection . group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil-prf-19500 and as follows. electrical measurements (end-points) shall be in accordance with the inspections of table ii herein. subgroup method condition 2 2036 test condition e . 6 1042 test condition d, 6,000 cycles. the heating cycle shall be 1 minute minimum. 4.4.4 group e inspection . group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in table ix of mil-prf-19500 and as follows. electrical measurements (end-points) shall be in accordance with the inspections of table ii herein. 1 / subgroup method condition sampling plan e1 105 1 test condition g, 500 cycles 45 devices, c = 0 electrical measurements see table ii, steps 1, 2, 3, 4, 5, 6, and 7. e2 1042 test condition a, 1,000 hours. 45 devices, c = 0 electrical measurements see table ii, steps 1, 2, 3, 4, 5, 6, and 7. e2 1042 test condition b, 1,000 hours. 45 devices, c = 0 electrical measurements see table ii, steps 1, 2, 3, 4, 5, 6, and 7. e3 not applicable e4 3161 r q jc see 1.4 5 devices, c = 0 e5 not applicable _______ 1 / a separate sample may be pulled for each test.
mil-prf-19500/565b 9 4.5 methods of inspection . methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil -std -750. 4.5.2 thermal impedance . thermal impedance measurements shall be performed in accordance with method 3161 of mil -std -750. r q jc(max) = (2n6895 = 15.0 c/w, 2n6896 = 2.083 c/w, 2n6897 = 1.25 c/w, 2n6898 = 0.83 c/w. t h = steady-state (see mil -std -750, method 3161 for definition). 2n6895 2n6896 2n6897 2n6898 i m 10 ma 10 ma 10 ma 10 ma i h 0.6 a 2 a 3.5 a 4 a v h 10 v 20 v 20 v 25 v t md 10 ? 80 m s 10 ? 80 m s 10 ? 80 m s 10 ? 80 m s t sw 10 m s max. 10 m s max. 10 m s max. 10 m s max. 4.5.3 thermal response ( d v sd measurements) . the d v sd measurements shall be performed in accordance with mil-std-750, method 3161. the d v sd conditions (i h and v h ) and maximum limit shall be derived by each vendor from the thermal response curves (see figure 3) and shall be specified in the certificate of conformance prior to qualification. the following parameter measurements shall apply. 2n6895 2n6896 2n6897 2n6898 i m 10 ma 10 ma 10 ma 10 ma i h 0.6 a 2 a 3.5 a 4 a v h 10 v 20 v 20 v 25 v t md 10 ? 80 m s 10 ? 80 m s 10 ? 80 m s 10 ? 80 m s t sw 10 m s max. 10 m s max. 10 m s max. 10 m s max. 4.5.4 unclamped inductive switching . a. peak current (i d ) 2n6895 1 a 2n6896 2.7 a 2n6897 5 a 2n6898 5.9 a b. p eak gate voltage (v gs ) ................................ ............................ 10 v. c. gate to source resistor (r gs ) ................................ ................... 25 w r gs 200 w . d. initial case temperature (t c ) ................................ ..................... +25 c, +10 c, -5 c. e. inductance (l) ................................ ................................ ............. 100 m h 10 percent. f. number of pulses to be applied ................................ .................. 1 pulse minimum. g. pulse repetition rate ................................ ................................ .... none. 4.5.5 gate stress test . v gs = - 30 v minimum. t = 250 m s minimum.
mil-prf-19500/565b 10 table i. group a inspection. inspection 1 / mil -std -750 symbol limits unit method conditions min max subgroup 1 visual and mechanical inspection 2071 subgroup 2 breakdown voltage, drain to source 3407 bias condition c, v gs = 0 v; i d = -1.0 ma dc v (br)dss -100 gate to source voltage (threshold) 3403 v ds > v gs ; i d = -0.25 ma dc v gs( th ) 1 -2.0 -4.0 v dc gate current 3411 bias condition c; v ds = 0 v; v gs = +20 and -20 v dc i gss1 100 na dc drain current 3413 v gs = 0; bias condition c; v ds = -80 v i dss1 -1.0 m a dc static drain to source on -state resistance 2n6895 2n6896 2n6897 2n6898 3421 v gs = -10 v dc; condition a; pulsed (see 4.5.1) i d = -0.74 a dc i d = -3.8 a dc i d = -7.6 a dc i d = -15.8 a dc r ds(on)1 3.65 0.6 0.3 0.2 ohms drain to source on -state voltage 2n6895 2n6896 2n6897 2n6898 3405 v gs = 10 v dc; condition a; pulsed (see 4.5.1) i d = -1.16 a dc i d = -6.0 a dc i d = -12.0 a dc i d = -25.0 a dc v ds(on)1 -6.0 -6.0 -4.8 -6.0 v forward voltage (source drain diode) 2n6895 2n6896 2n6897 2n6898 4011 pulsed (see 4.5.1); v gs = 0 v i s = -1.16 a dc i s = -6.0 a dc i s = -12.0 a dc i s = -25.0 a dc v sd -0.8 -1.6 v see footnotes at end of table.
mil-prf-19500/565b 11 table i. group a inspection - continued. inspection 1 / mil -std -750 symbol limits unit method conditions min max subgroup 2 continued forward transconductance 2n6895 2n6896 2n6897 2n6898 3475 pulsed (see 4.5.1), i d = rated i d 2 =(see 1.3). g fs 0.2 1.0 2.0 4.0 s subgroup 3 high temperature operation: t c = t j = +125 c gate to source voltage(threshold) 3403 v ds > v gs , i d = -0.25 ma dc v gs( th )2 -1.0 v dc gate current 3411 bias condition c, v ds = 0 v; v gs = +20 v dc and -20 v dc i gss2 200 na dc drain current 3413 bias condition c, v gs = 0 v, v ds = -80 v i dss2 - 50 m a dc static drain to source on-state resistance 2n6895 2n6896 2n6897 2n6898 3421 v gs = -10 v dc, pulsed (see 4.5.1) i d = - 0.74 a dc i d = - 3.8 a dc i d = - 7.6 a dc i d = - 15.8 a dc r ds(on)2 5.66 0.96 0.465 0.24 ohms low temperature operation: t c = t j = -55 c gate to source voltage (threshold) 3403 v ds > v gs , i d = -0.25 ma v gs( th )3 -5.0 v dc subgroup 4 switching time test 3472 i d = rated i d2 (see 1.3); v gs = 10 v dc; r gen =15 w r gs =15 w , v dd = 50 percent of rated v ds (see 1.3); turn -on delay time 2n6895 2n6896 2n6897 2n6898 v dd = -50 v dc i d = - 0.74 v dc i d = - 3.8 v dc i d = - 7.6 v dc i d = - 15.8 v dc t d(on) 25 60 60 50 ns see footnotes at end of table.
mil-prf-19500/565b 12 table i. group a inspection - continued. inspection 1 / 4 / mil -std -750 symbol limits unit method conditions min max rise time 2n6895 2n6896 2n6897 2n6898 v dd = -50 v dc i d = - 0.74 v dc i d = - 3.8 v dc i d = - 7.6 v dc i d = - 15.8 v dc t r 45 100 175 250 ns subgroup 4 - continued. turn -off delay time 2n6895 2n6896 2n6897 2n6898 v dd = -50 v dc i d = - 0.74 v dc i d = - 3.8 v dc i d = - 7.6 v dc i d = - 15.8 v dc t d(off) 45 150 275 400 ns fall time 2n6895 2n6896 2n6897 2n6898 v dd = -50 v dc i d = - 0.74 v dc i d = - 3.8 v dc i d = - 7.6 v dc i d = - 15.8 v dc t f 50 100 175 250 ns subgroup 5 safe operating area high voltage test electrical measurements see figure 4. v ds = 80 percent of rated v ds (see 1.3) see table iii, steps 1, 2, 3, 4, 5, 6, and 7 subgroup 6 not applicable subgroup 7 gate charge 3471 condition a or b test 1 on -state gate charge 2n6895 2n6896 2n6897 2n6898 q g (on) 2.2 13 31 50 4.7 24 58 117 nc see footnotes at end of table.
mil-prf-19500/565b 13 table i. group a inspection - continued. inspection 1 / mil -std -750 symbol limits unit method conditions min max subgroup 7 - continued. test 2 gate to source charge 2n6895 2n6896 2n6897 2n6898 q gs 0.4 1.1 3 6 1.2 5.5 13 25 nc test 3 gate to drain charge 2n6895 2n6896 2n6897 2n6898 q gd 0.9 5.5 14 26 2.9 14.5 36 69 nc reverse recovery time 2n6895 2n6896 2n6897 2n6898 3473 v dd = 30 v; di/ dt =100a/ m s i f = 4 a t rr 340 375 500 750 ns 1 / for sampling plan, see mil-prf-19500.
mil-prf-19500/565b 14 table ii. group a, b, c and e electrical measurements . 1 / 2 / 3 / step inspection mil -std -750 symbol limit unit method conditions min max 1. breakdown voltage drain to source 3407 bias condition c; i d = - 1.0 ma dc, v gs = 0 v v (br)dss - 100 v dc 2. gate to source voltage (threshold) 3403 v ds 3 v gs ; i d = -0.25 ma dc v gs( th )1 -2.0 -4.0 v dc 3. gate current 3411 bias condition c; v gs = + 20 vdc and -20 v dc; v ds = 0 v i gss1 -100 na dc 4. drain current 3413 bias condition c; v ds = -80 v dc; v gs = 0 v i dss1 -50 m a dc 5. static drain to source ?on?- state resistance 2n6895 2n6896 2n6897 2n6898 3421 v gs = -10 v dc; condition a, pulsed (see 4.5.1) i d = - 0.74 v dc i d = - 3.8 v dc i d = - 7.6 v dc i d = - 15.8 v dc r ds(on)1 3.65 0.6 0.3 0.2 ohm 6. drain to source ?on?- state voltage 2n6895 2n6896 2n6897 2n6898 3405 v gs = -10 v dc; condition a, pulsed (see 4.5.1) i d = - 1.16 v dc i d = - 6.0 v dc i d = - 12.0 v dc i d = - 25.0 v dc v ds(on) -6.0 -6.0 -4.8 -6.0 7. forward voltage (source drain diode) 2n6895 2n6896 2n6897 2n6898 4011 pulsed (see 4.5.1), v gs = 0 i s = -1.16 a dc i s = -6.04.0 a dc i s = -12.0 a dc i s = -25.0 a dc v sd -0.8 -1.6 v 8. thermal response 3161 see 4.5.3 d v sd 1 / the electrical measurements for appendix e, table via (jans) of mil-prf-19500 are as follows: a. subgroup 3, see table ii herein, steps 1, 2, 3, 4, 5, 6, and 7. b. subgroup 4, see table ii here in, steps 1, 2, 3, 4, 5, 6, 7, and 8. c. subgroup 5, see table ii herein, steps 1, 2, 3, 4, 5, 6, and 7. 2 / the electrical measurements for appendix e, table vib (jantx and jantxv) of mil-prf-19500 are as follows: a. subgroup 2, see table ii herein, steps 1, 2, 3, 4, 5, 6 and 7. b. subgroups 3 and 6, see table ii herein, steps 1, 2, 3, 4, 5, 6, 7 and 8. 3 / the electrical measurements for appendix e, table vii of mil-prf-19500 are as follows: a. subgroups 2 and 3, see table ii herein, steps 1, 2, 3, 4, 5, 6 and 7. b. subgroup 6, see table ii herein, steps 1, 2, 3, 4, 5, 6, 7 and 8.
mil-prf-19500/565b 15 figure 3. transient thermal response .
mil-prf-19500/565b 16 figure 3. transient thermal response - continued.
mil-prf-19500/565b 17 figure 3. transient thermal response - continued.
mil-prf-19500/565b 18 figure 3. transient thermal response - continued.
mil-prf-19500/565b 19 figure 4. maximum safe operating area .
mil-prf-19500/565b 20 figure 4. maximum safe operating area ? continued.
mil-prf-19500/565b 21 figure 4. maximum safe operating area ? continued.
mil-prf-19500/565b 22 figure 4. maximum safe operating area ? continued.
mil-prf-19500/565b 23 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contacting the responsible packaging activity. 5.2 the req uirements for packaging shall be in accordance with mil-prf-19500. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. issue of dodiss to be cited in the solicitation (see 2.1.1 and 2.2). b. the lead finish as specified (see 3.4.1). c. for die acquisition, sp ecify the janhc or jankc letter version (see figure 2). d. type designation and quality assurance level. 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified manufacturer's qml-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center columbus, dscc-vqe, columbus, oh 43216. 6.4 changes from previous issue . asterisks are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961 - 2084) nasa - na review activities: army - ar, mi, sm navy - as, cg, mc air force - 13, 19, 85, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/565b 2. document date (yymmdd) 990521 3. document title semiconductor device, field effect transistor, p -channel, silicon types 2n6895, 2n6896, 2n6897, and 2n6898 jan, jantx, jantxv and jans 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted (yymmdd) 8. preparing activity a. point of contact: alan barone, b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil c. address : defense supply center columbus, attn: dscc -vqe, 3990 east broad street, columbus, oh 43216 -5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533, fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-68880 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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