document number: 68908 www.vishay.com s10-1738-rev. c, 02-aug-10 1 automotive p-channel 40 v (d-s) 150 c mosfet sq4401dy vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified d ? find out more about vishays automotive grade product requirements at: www.vishay.com/applications notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 40 r ds(on) ( ? ) at v gs = - 10 v 0.014 r ds(on) ( ? ) at v gs = - 4.5 v 0.023 i d (a) - 15.8 configuration single s g d p-channel mosfet s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information package so-8 lead (pb)-free and halo gen-free SQ4401DY-T1-GE3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d - 15.8 a t c = 125 c - 7.1 continuous source curre nt (diode conduction) a i s - 6.5 pulsed drain current b i dm - 63 single pulse avalanche current l = 0.1 mh i as - 30 single pulse avalanche energy e as 45 mj maximum power dissipation b t c = 25 c p d 6 w t c = 125 c 1.2 operating junction and storage temperature range t j , t stg - 55 to + 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 85 c/w junction-to-foot (drain) r thjf 21
www.vishay.com document number: 68908 2 s10-1738-rev. c, 02-aug-10 sq4401dy vishay siliconix notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings may cause permanen t damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the sp ecifications is not implied. exposure to absolute maximum rating conditions for extended peri ods may affect de vice reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 40 v - - - 1.0 a v gs = 0 v v ds = - 40 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 40 v, t j = 150 c - - - 120 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 30 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 10.5 a - 0.011 0.014 ? v gs = - 10 v i d = - 30 a, t j = 125 c - 0.017 0.020 v gs = - 10 v i d = - 30 a, t j = 150 c - 0.019 0.022 v gs = - 4.5 v i d = - 30 a - 0.017 0.023 forward transconductance b g fs v ds = - 15 v, i d = - 10.5 a - 30 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 20 v, f = 1 mhz - 3400 4250 pf output capacitance c oss - 440 550 reverse transfer capacitance c rss - 350 436 total gate charge c q g v gs = - 10 v v ds = - 20 v, i d = - 10.5 a - 74 115 nc gate-source charge c q gs -11- gate-drain charge c q gd -16- turn-on delay time c t d(on) v dd = - 15 v, r l = 15 ? i d ? - 1 a, v gen = - 10 v, r g = 6 ? -5885 ns rise time c t r - 76 105 turn-off delay time c t d(off) -6785 fall time c t f -4455 source-drain diode ratings and characteristics b pulsed current a i sm --- 63a forward voltage v sd i f = - 2.7 a, v gs = 0 v - - 0.8 - 1.1 v
document number: 68908 www.vishay.com s10-1738-rev. c, 02-aug-10 3 sq4401dy vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 0246810 v gs =10vthru5v v gs =4v v d s - drain-to- s ource voltage (v) - drain current (a) i d v gs =3v 0 10 20 30 40 50 0 5 10 15 20 25 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = - 55 c t c = 25 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 010203040 c i ss c o ss c r ss v d s -drain-to- s ource voltage (v) c - capacitance (pf) 0 10 20 30 40 50 0246810 t c = 25 c t c = 125 c t c = - 55 c v gs - g ate-to- s ource voltage (v) - drain current (a) i d 0 0.01 0.02 0.03 0.04 0.05 0 1020304050 v gs =4.5v v gs =10v - on-re s i s tance ( ) r d s (on) i d - drain current (a) 0 2 4 6 8 10 0 1020304050607080 - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v gs i d =10.5a v d s =20 v
www.vishay.com document number: 68908 4 s10-1738-rev. c, 02-aug-10 sq4401dy vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature source drain diode forward voltage breakdown voltage bvdss vs . junction temperature on-resistance vs. gate-to-source voltage threshold voltage 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 i d =10.5a v gs =10v t j - junction temperature (c) (normalized) - on-re s i s tance r d s (on) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v s d - s ource-to-drain voltage (v) - s ource current (a) i s - 50 - 48 - 46 - 44 - 42 - 40 - 50 - 25 0 25 50 75 100 125 150 i d =1ma t j - junction temperature (c) breakdown voltage bvd ss 0.00 0.02 0.04 0.06 0.08 0.10 0246810 t j = 25 c t j = 125 c - on-re s i s tance ( ) r d s (on) v gs - g ate-to- s ource voltage (v) - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =1ma variance (v) v gs (th) t j - temperature (c)
document number: 68908 www.vishay.com s10-1738-rev. c, 02-aug-10 5 sq4401dy vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 0.01 0.1 1 10 100 v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied i d - drain current (a) t c = 25 c single pulse b v dss limited 100 ms 10 s, dc limited by r * ds(on) i dm limited 10 ms 1 s 1 ms 100 100 s 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance 1 0.1 0.01 t 1 t 2 note s : p dm 1. duty cycle, d = 2. per unit ba s e=r thja =84 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s urface mounted duty cycle = 0.5 s ingle pul s e 0.02 0.05
www.vishay.com document number: 68908 6 s10-1738-rev. c, 02-aug-10 sq4401dy vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general g u idelines only to ena b le the u ser to get a ? b all park? indication of part capa b ilities. the data are extracted from single p u lse transient thermal impedance characterist ics which are developed from empirical meas u rements. the latter is valid for the part mo u nted on printed circ u it b oard - fr4, size 1" x 1" x 0.062", do ub le sided with 2 oz. copper, 100 % on b oth sides. the part capa b ilities can widely vary depending on act u al application parameters and operating conditions. vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68908 . 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance 1 0.1 0.01 0.05 s ingle pul s e 0.02
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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