features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?specially designed for low voltage dc/dc converters ?fast switching for high efficiency maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current t a = 25? i d 12.5 t j = 150? (1) t a = 70? 10.0 a pulsed drain current i dm 50 continuous source current (diode conduction) (1) i s 2.3 maximum power dissipation (1) t a = 25? p d 2.5 w t a = 70? 1.6 operating junction and storage temperature range t j , t stg ?5 to 150 ? maximum junction-to-ambient (1) thermal resistance r ja 50 ?/w notes: (1) surface mounted on fr4 board, t 10 sec. mechanical data case: so-8 molded plastic body terminals: leads solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals mounting position: any weight: 0.5g GF4420 n-channel enhancement-mode mosfet v ds 30v r ds(on) 9 m ? i d 12.5a 7/11/01 5 1 4 0.244 (6.20) 0.228 (5.79) 8 0.157 (3.99) 0.150 (3.81) 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.009 (0.23) 0.004 (0.10) 0.197 (5.00) 0.189 (4.80) 0.069 (1.75) 0.053 (1.35) 0.019 (0.48) 0.010 (0.25) x 45 0 8 0.050(1.27) 0.016 (0.41) 0.009 (0.23) 0.007 (0.18) dimensions in inches and (millimeters) so-8 t rench g en f et 0.245 (6.22) min. 0.035 (0.889) 0.025 (0.635) 0.050 typ. (1.27) 0.165 (4.19) 0.155 (3.94) 0.05 (1.27) 0.04 (1.02) mounting pad layout
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v 1 a v ds =30v, v gs =0v, t j =55 c 5 on-state drain current (2) i d(on) v ds 5v, v gs = 10v 30 a drain-source on-state resistance (2) r ds(on) v gs = 10v, i d = 12.5a 79 m ? v gs = 4.5v, i d = 10.5a 9.5 13 forward transconductance (2) g fs v ds = 15v, i d = 12.5a 50 s dynamic total gate charge q g v ds = 15v, v gs = 5v, i d = 12.5a 31 48 63 108 nc gate-source charge q gs v ds = 15v, v gs =10v 16 gate-drain charge q gd i d = 12.5a 10 turn-on delay time t d(on) 10 16 rise time t r v dd = 15v, r l = 15 ? 10 16 turn-off delay time t d(off) i d 1a, v gen = 10v 105 170 ns fall time t f r g = 6 ? 33 66 input capacitance c iss v gs = 0v 3500 output capacitance c oss v ds = 15v 715 pf reverse transfer capacitance c rss f = 1.0mh z 340 source-drain diode diode forward voltage (2) v sd i s = 2.3a, v gs = 0v 1.1 v source-drain reverse recovery time t rr i f = 2.3a, di/dt = 100a/ s 49 90 ns notes: (1) surface mounted on fr4 board, t 10 sec. (2) pulse test; pulse width 300 s, duty cycle 2% GF4420 n-channel enhancement-mode mosfet g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
0 10 20 30 50 0 0.5 1 1.5 2 2.5 fig. 1 ?output characteristics i d -- drain source current (a) v ds -- drain-to-source voltage (v) 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 01020304050 fig. 4 ?on-resistance vs. drain current r ds(on) -- on-resistance ( ? ) i d -- drain current (a) 0 10 20 40 30 50 1 1.5 2 3 2.5 3.5 4 fig. 2 ?transfer characteristics i d -- drain current (a) v gs -- gate-to-source voltage (v) 40 v gs = 2.5v 0.8 0.6 1.4 1.6 1.2 1 -- 50 -- 25 25 50 75 100 125 150 0 r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 12.5a v gs = 4.5v v gs = 10v t j = 125 c 3.0v 6.0v 4.0v v ds = 10v 10v 3.5v 25 c -- 55 c 0.6 1.4 1.2 1.6 1.8 0.8 1 -- 50 -- 25 25 50 75 100 125 150 0 v gs(th) -- threshold voltage (v) t j -- junction temperature ( c) fig. 3 ?threshold voltage vs. temperature i d = 250 a 4.5v ratings and characteristic curves (t a = 25 c unless otherwise noted) GF4420 n-channel enhancement-mode mosfet
0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 i s -- source current (a) v sd -- source-to-drain voltage (v) t j = 125 c fig. 9 source-drain diode forward voltage 25 c --55 c v gs = 0v 0 2 4 6 8 10 01020 40 30 q g -- gate charge (nc) fig. 7 gate charge 50 60 v gs -- gate-to-source voltage (v) v ds = 15v i d = 12.5a 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 30 20 25 fig. 8 capacitance c -- capacitance (pf) v ds -- drain-to-source voltage (v) c iss c rss c oss f = 1mh z v gs = 0v fig. 6 on-resistance vs. gate-to-source voltage i d = 12.5a 0 0.005 0.01 0.02 0.015 0.025 0.03 2 r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) 46810 t j = 125 c 25 c ratings and characteristic curves (t a = 25 c unless otherwise noted) GF4420 n-channel enhancement-mode mosfet
ratings and characteristic curves (t a = 25 c unless otherwise noted) GF4420 n-channel enhancement-mode mosfet 37 36 38 40 41 42 43 39 -- 50 -- 25 25 50 75 100 125 0 fig. 10 breakdown voltage vs. junction temperature bv dss -- breakdown voltage (v) t j -- junction temperature ( c) 150 i d = 250 a fig. 11 transient thermal impedance fig. 13 maximum safe operating area i d -- drain current (a) v ds -- drain-source voltage (v) 0.01 0.1 0.1 1 1 10 100 10 100 fig. 12 power vs. pulse duration v gs = 10v single pulse on 1-in 2 2oz cu. t a = 25 c r ds(on) limit 100 s 1ms 10ms 100ms 1s dc 10s 0.1 0.01 0 10 20 30 40 50 60 70 1 10 100
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