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& ' () (' * ( " ( ' ) ) ) ') apm2030n handling code tem p. range package code package code d : so t-89 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm2030n d : apm2030 xxxxx xxxxx - date code lead free code

? 20v/6a , r ds(on) =28m ? (typ.) @ v gs =4.5v r ds(on) =38m ? (typ.) @ v gs =2.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) ? switching regulators ? ? ? ? ? switching converters n-channel mosfet top view of sot-89 g d s g s d (3) (2) (1) note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature.
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# symbol parameter rating unit v dss drain-source voltage 20 v gss gate-source voltage 12 v i d * continuous drain current 6 i dm * pulsed drain current v gs =4.5v 24 a i s * diode continuous forward current 2.3 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 1.47 p d * power dissipation for single operation t a =100 c 0.58 w r ja * thermal resistance-junction to ambient 85 c/w note: *surface mounted on 1in 2 pad area, t 10sec. APM2030ND symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 20 v v ds =18v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 0.5 0.7 1 v i gss gate leakage current v gs =12v, v ds =0v 100 na v gs =4.5v, i ds =6a 28 32 r ds(on) a drain-source on-state resistance v gs =2.5v, i ds =2a 38 45 m ? v sd a diode forward voltage i sd =1.5a, v gs =0v 0.7 1.3 v gate charge characteristics b q g total gate charge 9 11 q gs gate-source charge 3.6 q gd gate-drain charge v ds =10v, v gs =4.5v, i ds =6a 1 nc (t a = 25 c unless otherwise noted) ! " #
(t a = 25 c unless otherwise noted)
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+ APM2030ND symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 2 ? c iss input capacitance 520 c oss output capacitance 110 c rss reverse transfer capacitance v gs =0v, v ds =15v, frequency=1.0mhz 70 pf t d(on) turn-on delay time 17 32 t r turn-on rise time 15 29 t d(off) turn-off delay time 45 56 t f turn-off fall time v dd =10v, r l =10 ? , i ds =1a, v gen =4.5v, r g =6 ? 25 32 ns notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing. $
%& (t a = 25 c unless otherwise noted)
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, '( power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) i d - drain current (a) normalized transient thermal resistance thermal transient impedance square wave pulse duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a =25 o c 0 20406080100120140160 0 1 2 3 4 5 6 7 t a =25 o c,v g =4.5v 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 85 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0.1 1 10 80 0.01 0.1 1 10 50 rds(on) limit 100ms 300 s t c =25 o c 1s 100 s 1ms 10ms dc
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% v ds - drain - source voltage (v) i d - drain current (a) output characteristics r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) t j - junction temperature ( c) gate threshold voltage normalized threshold vlotage '( $
%& 012345 0 2 4 6 8 10 12 14 16 18 20 3v 1.5v 2v v gs =4,5,6,7,8,9,10v 0 4 8 12 16 20 24 0 10 20 30 40 50 60 70 80 v gs =4.5v v gs =2.5v 01234 0 3 6 9 12 15 18 21 24 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 a
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- drain-source on resistance normalized on resistance t j - junction temperature ( c) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) v ds - drain - source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) v gs - gate-source voltage (v) '( $
%& -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 28m ? v gs = 4.5v i ds = 6a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 048121620 0 100 200 300 400 500 600 700 800 frequency=1mhz crss coss ciss 0 4 8 12 16 20 24 0 2 4 6 8 10 v ds =10v i d = 6a
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. millimeters inches dim min. max. min. max. a 1.40 1.60 0.055 0.063 b 0.40 0.56 0.016 0.022 b1 0.35 0.48 0.014 0.019 c 0.35 0.44 0.014 0.017 d 4.40 4.60 0.173 0.181 d1 1.35 1.83 0.053 0.072 e 1.50 bsc 0.059 bsc e1 3.00 bsc 0.118 bsc e 2.29 2.60 0.090 0.102 h 3.75 4.25 0.148 0.167 l 0.80 1.20 0.031 0.047 10 10

sot-89 (reference eiaj ed-7500a registration sc-62) d d1 e b1 e1 b 12 3 l h e a c
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/ millimeters inches dim min. max. min. a 1.50 1.80 a 1.50 a1 0.02 0.08 a1 0.02 b 0.60 0.80 b 0.60 b1 2.90 3.10 b1 2.90 c 0.28 0.32 c 0.28 d 6.30 6.70 d 6.30 e 2.3 bsc 0.09 bsc e1 4.6 bsc 0.18 bsc h 6.70 7.30 h 6.70 l 0.91 1.10 l 0.91 k 1.50 2.00 k 1.50 0 10 0 13 13

sot-223 (reference jedec registration sot-223) 1.5 typ [0.06] 1 typ [0.04] 2.3 [0.092] 3.3 [0.132] 1.5 [0.06] 6.3 [0.252] a c l a 1 b b 1 d h e k e e 1 land pattern recommendation controlling dimension is millimeters values in [ ] are inch
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t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. #*

(ir/convection or vpr reflow)
#* profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
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!$ test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles '+#

t ao e w po p ko bo d1 d f p1 # ! (' table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c
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!! application a b c j t1 t2 w p e 330 3100 213 0. 5 2 0.5 16.4 + 0.3 -0.2 2.5 0.5 16+ 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to-252 7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05 application carrier width cover tape width devices per reel to- 252 16 13.3 2500 ), anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 ,'

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%& a j b t2 t1 c (mm)

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