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savantic semiconductor product specification silicon npn power transistors 2SD866 2SD866a description with to-220c package low collector saturation voltage excellent linearity of h fe high collector current applications for power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit 2SD866 130 v cbo collector-base voltage 2SD866a open emitter 150 v 2SD866 80 v ceo collector-emitter voltage 2SD866a open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cm collector current-peak 15 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD866 2SD866a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD866 80 v (br)ceo collector-emitter breakdown voltage 2SD866a i c =0.2a; i b =0 100 v v cesat collector-emitter saturation voltage i c =5 a;i b =0.25 a 0.5 v v besat base-emitter saturation voltage i c =5 a;i b =0.25 a 1.5 v i cbo collector cut-off current v cb =100v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe-1 dc current gain i c =0.1a ; v ce =2v 45 h fe-2 dc current gain i c =3a ; v ce =2v 60 260 f t transition frequency i c =0.5a ; v ce =10v 30 mhz switching times t on turn-on time 0.5 s t s storage time 1.5 s t f fall time i c =3a;i b1 =-i b2 =0.3 a 0.1 s h fe-2 classifications r q p 60-120 90-180 130-260
savantic semiconductor product specification 3 silicon npn power transistors 2SD866 2SD866a package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)

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