2n3819 vishay siliconix document number: 70238 s?04028?rev. d ,04-jun-01 www.vishay.com 7-1 n-channel jfet
v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) ?8 ?25 2 2
excellent high-frequency gain: gps 11 db @ 400 mhz very low noise: 3 db @ 400 mhz very low distortion high ac/dc switch off-isolation high gain: a v = 60 @ 100 a wideband high gain very high system sensitivity high quality of amplification high-speed switching capability high low-level signal amplification high-frequency amplifier/mixer oscillator sample-and-hold very low capacitance switches the 2n3819 is a low-cost, all-purpose jfet which offers good performance at mid-to-high frequencies. it features low noise and leakage and guarantees high gain at 100 mhz. its to-226aa (to-92) package is compatible with various tape-and-reel options for automated assembly (see packaging information). for similar products in to-206af (to-72) and to-236 (sot-23) packages, see the 2n4416/2n4416a/sst4416 data sheet. 1 to-226aa (to-92) top view s d g 2 3
gate-source/gate-drain voltage ?25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward gate current 10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
2n3819 vishay siliconix www.vishay.com 7-2 document number: 70238 s ? 04028 ? rev. d ,04-jun-01
limits parameter symbol test conditions min typ a max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 25 ? 35 gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 2 na ? 3 ? 8 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 2 10 20 ma v gs = ? 15 v, v ds = 0 v ? 0.002 ? 2 na gate reverse current i gss t a = 100 c ? 0.002 ? 2 a gate operating current c i g v dg = 10 v, i d = 1 ma ? 20 drain cutoff current i d(off) v ds = 10 v, v gs = ? 8 v 2 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 150 gate-source voltage v gs v ds = 15 v, i d = 200 a ? 0.5 ? 2.5 ? 7.5 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic f = 1 khz 2 5.5 6.5 common-source forward transconductance c g fs v ds = 15 v v = 0 v f = 100 mhz 1.6 5.5 ms common-source output conductance c g os v gs = 0 v f = 1 khz 25 50 s common-source input capacitance c iss 2.2 8 common-source reverse transfer capacitance c rss v ds = 15 v, v gs = 0 v, f = 1 mhz 0.7 4 pf equivalent input noise voltage c e n v ds = 10 v, v gs = 0 v, f = 100 hz 6 nv ? hz notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nh b. pulse test: pw 300 s, duty cycle 2%. c. this parameter not registered with jedec. on-resistance and output conductance vs. gate-source cutoff voltage 500 0 ? 10 ? 6 300 0 100 60 0 r ds g os r ds @ i d = 1 ma, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v f = 1 khz drain current and transconductance vs. gate-source cutoff voltage 20 0 ? 10 0 10 0 i dss g fs v gs(off) ? gate-source cutoff voltage (v) 80 40 20 400 100 200 ? 2 ? 4 ? 8 v gs(off) ? gate-source cutoff voltage (v) 6 8 4 2 ? 6 ? 2 ? 4 ? 8 12 16 4 8 i dss @ v ds = 15 v, v gs = 0 v g fs @ v ds = 15 v, v gs = 0 v f = 1 khz gos ? output conductance ( s) i dss ? saturation drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) g fs ? forward transconductance (ms)
2n3819 vishay siliconix document number: 70238 s ? 04028 ? rev. d ,04-jun-01 www.vishay.com 7-3 10 0 2 8 6 4 gate leakage current 01020 5 ma 0.1 ma 100 na 10 na 1 na 100 pa 10 pa 1 pa 0.1 pa 0.1 ma i gss @ 25 c t a = 25 c t a = 125 c 5 ma i gss @ 125 c output characteristics output characteristics common-source forward transconductance vs. drain current 0.1 1 10 10 2 0 v gs (off) = ? 3 v t a = ? 55 c 125 c 10 04 10 0 ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.2 v ? 1.0 v v gs = 0 v 15 010 0 ? 0.6 v ? 0.9 v ? 1.2 v ? 1.5 v ? 1.8 v v gs = 0 v ? 0.3 v v dg ? drain-gate voltage (v) i d ? drain current (ma) v ds ? drain-source voltage (v) v ds ? drain-source voltage (v) v gs ? gate-source voltage (v) transfer characteristics v gs(off ) = ? 2 v t a = ? 55 c 125 c v gs ? gate-source voltage (v) transfer characteristics t a = ? 55 c 125 c v gs(off) = ? 3 v 8 6 4 v ds = 10 v f = 1 khz v gs (off) = ? 2 v v gs (off) = ? 3 v 2 8 6 4 268 4 268 3 12 9 6 v ds = 10 v v ds = 10 v 10 0 2 8 6 4 0 ? 0.8 ? 20 ? 3 ? 0.4 ? 1.2 ? 1.6 ? 1.2 ? 0.6 ? 1.8 ? 2.4 1 ma 1 ma 25 c 25 c 25 c ? 1.4 v g fs ? forward transconductance (ms) i g ? gate leakage i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma)
2n3819 vishay siliconix www.vishay.com 7-4 document number: 70238 s ? 04028 ? rev. d ,04-jun-01 v gs ? gate-source voltage (v) transconductance vs. gate-source voltage 10 0 ? 0.8 ? 2 8 0 v gs(off) = ? 2 v t a = ? 55 c 125 c v gs ? gate-source voltage (v) transconductance vs. gate-source voltgage 10 ? 3 ? 0.6 0 0 t a = ? 55 c 125 c v gs(off) = ? 3 v i d ? drain current (ma) i d ? drain current (ma) on-resistance vs. drain current circuit voltage gain vs. drain current 0.1 1 10 300 0 t a = ? 55 c ? 3 v v gs(off) = ? 2 v 10 0.1 100 0 assume v dd = 15 v, v ds = 5 v r l 10 v i d v gs(off) = ? 2 v ? 3 v common-source input capacitance vs. gate-source voltage common-source reverse feedback capacitance vs. gate-source voltage 5 0 ? 20 ? 4 0 f = 1 mhz v ds = 0 v v ds = 10 v 3.0 0 ? 20 0 v ds = 0 v v ds = 10 v v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) f = 1 mhz v ds = 10 v f = 1 khz v ds = 10 v f = 1 khz 6 4 2 240 180 120 60 8 6 4 2 80 60 40 20 1 ? 0.4 ? 1.6 ? 1.2 ? 1.2 ? 1.8 ? 2.4 4 3 2 1 ? 8 ? 12 ? 16 ? 4 ? 8 ? 12 ? 16 2.4 1.8 1.2 0.6 a v g fs r l 1 r l g os 25 c 25 c g fs ? forward transconductance (ms) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) a v ? voltage gain c iss ? input capacitance (pf) c rss ? reverse feedback capacitance (pf)
2n3819 vishay siliconix document number: 70238 s ? 04028 ? rev. d ,04-jun-01 www.vishay.com 7-5 reverse admittance output admittance input admittance forward admittance 100 10 1 0.1 100 1000 b is g is t a = 25 c v ds = 15 v v gs = 0 v common source (ms) 100 10 1 0.1 100 t a = 25 c v ds = 15 v v gs = 0 v common source (ms) ? b is g fs 10 1 0.1 0.01 t a = 25 c v ds = 15 v v gs = 0 v common source ? b rs ? g rs 10 1 0.1 0.01 t a = 25 c v ds = 15 v v gs = 0 v common source b os g os f ? frequency (mhz) f ? frequency (mhz) f ? frequency (mhz) f ? frequency (mhz) equivalent input noise voltage vs. frequency output conductance vs. drain current 10 100 1 k 100 k 10 k 20 0 i d = 5 ma v ds = 10 v 20 0 0.1 1 10 t a = ? 55 c 125 c v gs(off) = ? 3 v i d ? drain current (ma) f ? frequency (hz) (ms) (ms) 200 500 1000 200 500 100 1000 100 200 500 1000 200 500 v ds = 10 v f = 1 khz v gs(off) = ? 3 v 16 12 8 4 16 12 8 4 i d = i dss 25 c e n ? noise voltage nv / hz g os ? output conductance ( s)
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