? by semikron 000131 b 16 ? 23 absolute maximum ratings symbol conditions 1) values units inverter v ces v ges i c i cm i f = ?i c i fm = ?i cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 600 20 22 / 15 44 / 30 36 / 24 72 / 48 v v a a a a bridge rectifier v rrm i d i fsm i 2 t t heatsink = 80 c t p = 10 ms; sin. 180 , t j = 25 c t p = 10 ms; sin. 180 , t j = 25 c 800 25 370 680 v a a a 2 s t j t stg v isol ac, 1 min. ? 40 . . . + 150 ? 40 . . . + 125 2500 c c v characteristics symbol conditions 1) min. typ. max. units igbt - inverter & chopper v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 15 a t j = 25 (125) c v cc = 300 v; v ge = 15 v i c = 15 a; t j = 125 c r gon = r goff = 68 ? inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt ? ? ? ? ? ? ? ? 2,1(2,2) 35 50 250 500 2,2 0,8 ? 2,7(2,8) 70 100 370 750 ? ? 2,0 v ns ns ns ns mj nf k/w diode 2) - inverter v f = v ec v to r t i rrm q rr e off r thjh i f = 25 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 25 a, v r = ? 300 v di f /dt = ? 500 a/ s v ge = 0 v, t j = 125 c per diode ? ? ? ? ? ? ? 1,45(1,4) 0,85 22 25 2,5 0,75 ? 1,7(1,7) 0,9 32 ? ? ? 1,7 v v m ? a c mj k/w diode 2) - chopper v f = v ec v to r t i rrm q rr e off r thjh i f = 10 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 10 a, v r = ? 300 v di f /dt = ? 200 a/ s v ge = 0 v, t j = 125 c per diode ? ? ? ? ? ? ? 1,45(1,4) 0,85 55 13 1,5 0,45 ? 1,7(1,7) 0,9 80 ? ? ? 2,7 v v m ? a c mj k/w diode - rectifier v f r thjh i f = 25 a, t j = 25 c per diode ? ? 1,2 ? ? 2,6 v k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 ? mechanical data m 1 case case to heatsink, si units mechanical outline see page b 16 ? 8 2? m2 2,5 nm skiip 20 nab 06 - skiip 20 nab 06 i miniskiip 2 semikron integrated intelligent power skiip 20 nab 06 skiip 20 nab 06 i 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter case m2 ul recognized file no. e63532 specification of shunts and temperature sensor see part a common characteristics see page b16?3 options also available with single phase rectifier (called 20 neb 06 or 20 neb 06 i 3) ) also available with faster igbts (type ... 063), data sheet on request 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery) 3) with integrated dc and/or ac shunts 4) accuracy of pure shunt, please note that for dc shunt no separate sensing contact is used. r cs(dc) r cs(ac) 5 % 4) 1 % 16,5 m ? 10 m ?
b 16 ? 24 000131 ? by semikron fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) t j = 125 c v ce = 300 v v ge = 15 v i c = 15 a t j = 125 c v ce = 300 v v ge = 15 v r g = 68 ? i cpuls = 15 a v ge = 0 v f = 1 mhz fig. 1 typ. output characteristic, t p = 80 s; 25 c fig. 2 typ. output characteristic, t p = 80 s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce
? by semikron 0698 b 16 C 3 fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v fig. 7 rated current of the igbt i cop / i c = f (t h ) t j = 150 c v ge = 3 15 v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini0607 t h [c] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode 2. common characteristics of miniskiip miniskiip 600 v
miniskiip 2 skiip 20 nab 06 ... skiip 21 nab 06 ... skiip 20 nab 12 ... skiip 22 nab 12 ... circuit case m2 layout and connections for the customers printed circuit board note: the shunts are available only by option i -dc/a isw 0w isv 0v 0u isu i+ b -t l3 l1 l2 +rect -dc -rect g1 u v w +t +dc g3 g5 g2 g6 g4 gb +b -b hauptanschlu? power connector control pin steueranschlu?
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