1 power transistors 2sc5223 silicon npn triple diffusion planar type for high-speed switching n features l high collector to base voltage v cbo l high collector to emitter v ceo n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation (t c =25 c) junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 500 500 7 2.0 1.0 10 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current emitter cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage symbol i cbo i ebo v cbo v ceo v ebo h fe1 h fe2 v ce(sat) v be(sat) conditions v cb = 400v, i e = 0 v eb = 5v, i c = 0 i c = 100 m a, i e = 0 i c = 1ma, i b = 0 i e = 10 m a, i c = 0 v ce = 5v, i c = 50ma v ce = 5v, i c = 330ma i c = 330ma, i b = 33ma i c = 330ma, i b = 33ma min 500 500 7 100 100 typ max 100 10 1.0 1.5 unit m a m a v v v v v unit: mm 1:base 2:collector 3:emitter u type package 6.5 0.1 5.3 0.1 4.35 0.1 4.6 0.1 2.3 0.1 0.75 0.1 123 0.93 0.1 2.5 0.1 0.8max 1.0 0.2 7.3 0.1 1.8 0.1 2.3 0.1 0.5 0.1 0.5 0.1 0.1 0.05 1.0 0.1 6.5 0.2 2.3 5.35 4.35 13.3 0.3 2.3 0.1 5.5 0.2 6.0 1.8 0.75 0.6 3 2.3 2 1 0.5 0.1 1:base 2:collector 3:emitter eiaj:sc?3 u type package (z) unit: mm
2 power transistors 2sc5223 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c c ob v cb 0 200 160 40 120 80 0 12 10 8 6 4 2 without heat sink ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 06 5 4 13 2 0 600 500 400 300 200 100 ta=25?c 5ma 4ma 3ma 2ma 1ma i b =6ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.001 0.01 0.1 1 0.003 0.03 0.3 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =10 ?5?c 25?c t c =100?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.001 0.01 0.1 1 0.003 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.001 0.01 0.1 1 0.003 0.03 0.3 0 600 500 400 300 200 100 t c =100?c 25?c ?5?c v ce =5v collector current i c ( a ) forward current transfer ratio h fe 1 10 100 1000 3 30 300 0 120 100 80 60 40 20 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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