1.5-v rated si1032r/x vishay siliconix document number: 71172 s-40574?rev. c, 29-mar-04 www.vishay.com 1 n-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (ma) 5 @ v gs = 4.5 v 200 20 7 @ v gs = 2.5 v 175 20 9 @ v gs = 1.8 v 150 10 @ v gs = 1.5 v 50 features benefits applications low-side switching low on-resistance: 5 low threshold: 0.9 v (typ) fast switching speed: 35 ns 1.8-v operation gate-source esd protection ease in driving switches low offset (error) v oltage low-voltage operation high-speed circuits low battery voltage operation drivers: relays, solenoids, lamps, hammers, displays, memories battery operated systems power supply converter circuits load/power switching cell phones, pagers ordering information: sc-75a (sot-416): si1032r-t1 sc-75a (sot-416): si1032r-t1?e3 (lead free) sc-89 (sot-490): si1032x-t1 sc-89 (sot-490): si1032x-t1?e3 (lead free) top view 2 1 s d g 3 marking code: g sc-75a or sc-89 absolute maximum ratings (t a = 25 c unless otherwise noted) si1032r si1032x parameter symbol 5 secs steady state 5 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 6 v continuous drain current (t j = 150 c) a t a = 25 c i d 200 140 210 200 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 85 c i d 110 100 150 140 ma pulsed drain current a i dm 500 600 m a continuous source current (diode conduction) a i s 250 200 300 240 maximum power dissipation a for sc 75 t a = 25 c p d 280 250 340 300 mw maximum power dissipation a for sc-75 t a = 85 c p d 145 130 170 150 mw operating junction and storage temperature range t j , t stg ? 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v notes c. surface mounted on fr4 board.
si1032r/x vishay siliconix www.vishay.com 2 document number: 71172 s-40574?rev. c, 29-mar-04 specifications (t a = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.40 0.7 1.2 v gate body leakage i gss v ds = 0 v, v gs = 2.8 v 0.5 1.0 gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 1.0 3.0 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 250 ma v gs = 4.5 v, i d = 200 ma 5 drain source on state resistance a r v gs = 2.5 v, i d = 175 m a 7 drain-source on-state resistance a r ds(on) v gs = 1.8 v, i d = 150 m a 9 v ds = 1.5 v, i d = 40 ma 10 forward transconductance a g fs v ds = 10 v, i d = 200 ma 0.5 s diode forward voltage a v sd i s = 150 ma, v gs = 0 v 1.2 v dynamic b total gate charge q g 750 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 150 ma 75 pc gate-drain charge q gd 225 turn-on delay time t d(on) 50 rise time t r v dd = 10 v, r l = 47 25 ns turn-off delay time t d(off) v dd = 10 v , r l = 47 i d 200 ma, v gen = 4.5 v, r g = 10 50 ns fall time t f 25 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (t a = 25 c unless noted) 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.1 0.2 0.3 0.4 0.5 0123456 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs = 5 thru 1.8 v v gs ? gate-to-source voltage (v) ? drain current (ma) i d t j = ? 55 c 125 c 25 c 1 v
si1032r/x vishay siliconix document number: 71172 s-40574?rev. c, 29-mar-04 www.vishay.com 3 typical characteristics (t a = 25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ? on-resistance ( r ds(on) ) 0 20 40 60 80 100 048121620 0.60 0.80 1.00 1.20 1.40 1.60 ? 50 ? 25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 0 50 100 150 200 250 v ds ? drain-to-source voltage (v) c rss c oss c iss v gs = 0 v f = 1 mhz i d ? drain current (ma) v gs = 4.5 v i d = 200 ma v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) 0 10 20 30 40 50 0123456 i d = 175 ma 1000 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (ma) i s v gs = 4.5 v i d = 200 ma v gs = 2.5 v v gs = 1.8 v i d = 175 ma t j = 125 c t j = 25 c t j = 50 c 10 100 v ds = 10 v i d = 150 ma r ds(on) ? on-resiistance (normalized)
si1032r/x vishay siliconix www.vishay.com 4 document number: 71172 s-40574?rev. c, 29-mar-04 typical characteristics (t a = 25 c unless noted) ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 ? 50 ? 25 0 25 50 75 100 125 i d = 0.25 ma threshold voltage variance vs. t emperature variance (v) v gs(th) t j ? temperature ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 25 0 25 50 75 100 125 i gss vs. t emperature t j ? temperature ( c) i gss ? ( a) 0 1 2 3 4 5 6 7 ? 50 ? 25 0 25 50 75 100 125 bv gss vs. t emperature t j ? temperature ( c) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient (sc-75a, si1032r only) square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 500 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm bv gss ? gate-to-source breakdown voltage (v) v gs = 2.8 v
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