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| jmnic product specification silicon npn power transistors 2SC3451 description ? with to-3pn package ? high breakdown voltage and high reliability. ? fast switching speed ? wide area of safe operation applications ? 500v/15a switching r egulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i cm collector current-peak 25 a i b base current 4 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
jmnic product specification 2 silicon npn power transistors 2SC3451 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = ?t 500 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 800 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.2a 1.0 v v besat base-emitter saturation voltage i c =6a ;i b =1.2a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =1.2a ; v ce =5v 15 50 h fe-2 dc current gain i c =6a ; v ce =5v 8 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 160 pf f t transition frequency i c =1.2a ; v ce =10v 18 mhz switching times t on turn-on time 0.5 | s t stg storage time 3.0 | s t f fall time i c =7a;r l =28.6 |? i b1 =1.4a; i b2 =-2.8a v cc =200v 0.3 | s ? h fe-1 classifications l m n 15-30 20-40 30-50 jmnic product specification 3 silicon npn power transistors 2SC3451 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) jmnic product specification 4 silicon npn power transistors 2SC3451 |
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