IRGBC40K-S short circuit rated ultrafast fast igbt insulated gate bipolar transistor features ? short circuit rated - 10s @ 125c, v ge = 15v ? switching-loss rating includes all "tail" losses ? optimized for high operating frequency (over 5khz) see fig. 1 for current vs. frequency curve v ces = 600v v ce(sat) 3.2v @v ge = 15v, i c = 25a e c g n-channel pd - 9.1134 description parameter min. typ. max. units r q jc junction-to-case ------ ------ 0.77 r q ja junction-to-ambient, (pcb mount)** ------ ------ 40 c/w r q ja junction-to-ambient, typical socket mount ------ ------ 80 wt weight ------ 2 (0.07) ------ g (oz) parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 42 i c @ t c = 100c continuous collector current 25 a i cm pulsed collector current ? 84 i lm clamped inductive load current ? 84 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 15 mj p d @ t c = 25c maximum power dissipation 160 w p d @ t c = 100c maximum power dissipation 65 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings ** when mounted on 1" square pcb (fr-4 or g-10 material) for recommended footprint and soldering techniques refer to application note #an-994. thermal resistance smd-220 insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power mosfet. they provide substantial benefits to a host of high-voltage, high-current applications. these new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGBC40K-S notes: ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 w , ( see fig. 13a ) ? repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? repetitive rating; pulse width limited by maximum junction temperature. ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 61 92 i c = 25a q ge gate - emitter charge (turn-on) ---- 13 19 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ---- 22 33 v ge = 15v t d(on) turn-on delay time ---- 35 ---- t j = 25c t r rise time ---- 27 ---- ns i c = 25a, v cc = 480v t d(off) turn-off delay time ---- 160 240 v ge = 15v, r g = 10 w t f fall time ---- 130 200 energy losses include "tail" e on turn-on switching loss ---- 0.52 ---- e off turn-off switching loss ---- 1.2 ---- mj see fig. 9, 10, 11, 14 e ts total switching loss ---- 1.7 2.6 t sc short circuit withstand time 10 ---- ---- s v cc = 360v, t j = 125c v ge = 15v, r g = 10 w , v cpk < 500v t d(on) turn-on delay time ---- 34 ---- t j = 150c, t r rise time ---- 28 ---- ns i c = 25a, v cc = 480v t d(off) turn-off delay time ---- 300 ---- v ge = 15v, r g = 10 w t f fall time ---- 310 ---- energy losses include "tail" e ts total switching loss ---- 3.6 ---- mj see fig. 10, 14 l e internal emitter inductance ---- 7.5 ---- nh measured 5mm from package c ies input capacitance ---- 1500 ---- v ge = 0v c oes output capacitance ---- 190 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 17 ---- ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ---- ---- v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 20 ---- ---- v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage ---- 0.46 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 2.1 3.2 i c = 25a v ge = 15v ---- 2.8 ---- v i c = 42a see fig. 2, 5 ---- 2.5 ---- i c = 25a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ---- -13 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 7.0 14 ---- s v ce = 100v, i c = 25a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified)
fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics IRGBC40K-S 0 10 20 30 40 50 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated voltage ideal diodes square wave: triangular wave: clamp voltage: 80% of rated for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = 28w 0.1 1 10 100 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 1 10 100 1000 5 101520 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v = 100v 5s pulse width cc v , gate-to-emitter voltage (v) a
fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGBC40K-S fig. 6 - maximum effective transient thermal impedance, junction-to-case 0 10 20 30 40 50 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge a 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 c ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge t , case temperature (c) a i = 50a i = 25a i = 13a c c c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
IRGBC40K-S fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 0 500 1000 1500 2000 2500 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 20406080 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 25a ce c 1.6 1.7 1.8 1.9 2.0 2.1 2.2 0 102030405060 g total switching losses (mj) r , gate resistance ( w ) a v = 480v v = 15v t = 25c i = 25a cc ge c c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 c t , case temperature (c) total switching losses (mj) r = 10 w v = 15v v = 480v g ge cc a i = 50a i = 25a i = 13a c c c
IRGBC40K-S fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current dimensions in millimeters and (inches) 0.46 (0.018) 0.64 (0.025) 2.54 (0.100) 4.20 (0.165) 4.69 (0.185) 5.08 (0.200) ref. 1.40 (0.055) 1.15 (0.045) 15.49 (0.610) 14.73 (0.580) 1.15 (0.045) min. 0.69 (0.027) 0.93 (0.037) 1.27 (0.050) 1.78 (0.070) 9.91 (0.390) 10.67 (0.420) 10.54 (0.415) 10.29 (0.405) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) max. 2.89 (0.114) 2.64 (0.104) 0.010 (0.004) 5 typ. 2 1.32 (0.052) 1.22 (0.048) 1 2 3 outline smd-220 4 lead assignment s 1 - gate 2 - collector 3 - emitter 4 - collector 0 2 4 6 8 10 0 102030405060 c total switching losses (mj) r = 10 w t = 150c v = 480v v = 15v g c cc ge i , collector-to-emitter current (a) a 1 10 100 1000 1 10 100 100 0 c ce i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j v , collector-to-emitter voltage (v) a
480v 4 x i c @ 25c IRGBC40K-S d.u.t. 50v l v * c ? ? ? ? * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will incr ease to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5 s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v ? ? ? ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
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