application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter 1 2, 4 3 dpak? 1 2 3 4 1 2 3 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ? a drain peak current i d(pulse) * ?0 a body?rain diode reverse drain current i dr ? a channel dissipation pch** 20 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25? 2sj318 l , 2sj318 s silicon p channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss ?0 v i d = ?0 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?00 ? v ds = ?6 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.25 v i d = ? ma, v ds = ?0 v static drain to source on state r ds(on) 0.09 0.13 ? i d = ? a resistance v gs = ?0 v * 0.14 0.19 ? i d = ? a v gs = ? v * forward transfer admittance |y fs | 3.5 5.5 s i d = ? a v ds = ?0 v * input capacitance ciss 580 pf v ds = ?0 v output capacitance coss 520 pf v gs = 0 reverse transfer capacitance crss 215 pf f = 1 mhz turn?n delay time t d(on) 10 ns i d = ? a rise time t r 60 ns v gs = ?0 v turn?ff delay time t d(off) 75 ns r l = 3.3 ? fall time t f ?5 ns body?rain diode forward v df ?.1 v i f = ? a, v gs = 0 voltage body?rain diode reverse t rr ?5 si f = ? a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test 2sj318 l , 2sj318 s
20 15 10 5 0 channel dissipation pch (w) 50 100 150 200 case temperature ta (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d ?0 ?0 ? ? ?.3 ?.1 ?.3 ? ? ?0 ?0 operation in this area is limited by r ds(on) 10 ? 100 ? 1ms ta = 25 ? maximum safe oeparation area pw = 10 ms (1shot) dc operation (tc = 25 ?) ?0 ? ? ? ? 0 ? ? ? ? ?0 ?0v drain to source voltage v (v) ds d drain current i (a) ? v ?.5 v ? v ? v v = ?.5 v gs pulse test typical output charactristics ?0 ? ? ? ? 0 ? ? ? ? ? gain to source voltage v (v) gs d drain current i (a) 75 ? 25 ? tc = ?5 ? v = ?0 v pulse test ds typical transfer characteristics 3 2sj318 l , 2sj318 s
?.0 ?.8 ?.6 ?.4 ?.2 0 ? ? ?2 ?6 ?0 gain to source voltage v (v) gs ds(on) drain to source saturation voltage v (v) ? a ? a pulse test i = ? a d drain to source saturation voltage vs. gate to source voltage 0.5 0.2 0.1 0.05 0.02 0.01 ?.1 ?.2 ?.5 ? ? ? ?0 ?0 ?0 drain current i (a) d static drain to source state resistance ds(on) (?) r v = ? v gs v = ?0 v gs pusle test static drain to source on state resistance vs. drain current 0.4 0.32 0.24 0.16 0.08 0 0 ?0 40 80 120 160 case temperature tc (?) static drain to source on state resistance ds(on) (?) r v = ? v gs v = ?0 v gs pulse test i = ? a d ? a ? a ? a ? a ? a static drain to source on state resistance vs. temperature 20 10 5 1 2 0.5 ?.1 ?.2 ?.5 ? ? ? ?0 forward transfer admittance |yfs| (s) drain current i (a) d tc = 75 ? 25 ? ?5 ? v = ?0 v pulse test ds foeward transfer admittance vs. drain current 2sj318 l , 2sj318 s
200 100 50 20 10 ?.1 ?.2 ?.5 ? ? ? ?0 body?rain diode reverse recovery time t (ns) rr reverse drain current i (a) dr di / dt = 20 a / ? v = 0 ta = 25 ? gs body?rain diode reverse recovery time 2000 1000 500 200 100 50 20 10 0 4 8 ?2 ?6 ?0 ds drain to source voltage v (v) capacitance c (pf) ciss coss crss v = 0 f = 1mhz gs typical capacitance vs. drain to source voltage 0 ?0 ?0 ?0 ?0 ?0 0 ? ? ?2 ?6 ?0 0 8 16 24 32 40 gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs v = ? v ?0 v ?0 v dd v = ? v ?0 v ?0 v dd i = ? a d dynamic input characteristics v gs ds v 500 200 100 50 20 10 5 ?.05 ?.1 ?.2 ?.5 ? ? ? ?0 switching time t (ns) drain current i (a) d t f d(on) t r t d(off) t v = ?0 v, v = ?0 v pw = 2 ?, duty < 1 % gs dd switching characteristics 2sj318 l , 2sj318 s
?0 ? ? ? ? 0 ?.4 ?.8 ?.2 ?.6 ?.0 source to drain forward voltage reverse drain current i (a) dr pulse test ?0 v ? v v = 0, 5 v gs reverse drain current vs. source to drain voltage 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 6.25 ?/w, tc = 25 ? d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impedance vs. pulse width 2sj318 l , 2sj318 s
vin monitor d.u.t. vin ?0 v r l v = ?0 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 ? 90% 10% t f switching time test circuit waveforms 2sj318 l , 2sj318 s
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