? semiconductor components industries, llc, 2007 march, 2007 ? rev. 4 1 publication order number: bc517/d bc517 darlington transistors npn silicon features ? these are pb?free devices* maximum ratings rating symbol value unit collector ?emitter voltage v ces 30 vdc collector ?base voltage v cb 40 vdc collector ?emitter voltage v eb 10 vdc collector current ? continuous i c 1.0 adc total power dissipation @ t a = 25 c derate above t a = 25 c p d 625 12 mw mw/ c total power dissipation @ t a = 25 c derate above t a = 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information BC517G to?92 (pb?free) 5000 units / bulk http://onsemi.com bc517rl1g to?92 (pb?free) 2000 / tape & ree l bc517zl1g to?92 (pb?free) 2000 / ammo pack ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. collector 1 base 2 emitter 3 1 2 3 1 2 bent lead tape & reel ammo pack straight lead bulk pack 3 to?92 case 29 style 17 marking diagram bc 517 ayww a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location)
bc517 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 2.0 madc, i be = 0) v (br)ces 30 ? ? vdc collector ?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 40 ? ? vdc emitter ?base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 10 ? ? vdc collector cutoff current (v ce = 30 vdc) i ces ? ? 500 nadc collector cutoff current (v cb = 30 vdc, i e = 0) i cbo ? ? 100 nadc emitter cutoff current (v cb = 10 vdc, i c = 0) i ebo ? ? 100 nadc on characteristics (note 1) dc current gain (i c = 20 madc, v ce = 2.0 vdc) h fe 30,000 ? ? ? collector ?emitter saturation voltage (i c = 100 madc, i b = 0.1 madc) v ce(sat) ? ? 1.0 vdc collector ?emitter saturation voltage (i c = 10 madc, v ce = 5.0 vdc) v be(on) ? ? 1.4 vdc small?signal characteristics current?gain ? bandwidth product (note 2) (i c = 10 madc, v ce = 5.0 vdc, f = 100 mhz) f t ? 200 ? mhz 1. pulse test: pulse width = 300 s, duty cycle 2.0%. 2. f t = |h fe | ? f test r s i n e n ideal transistor figure 1. transistor noise model
bc517 http://onsemi.com 3 noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 2. noise voltage f, frequency (hz) 50 100 200 500 20 figure 3. noise current f, frequency (hz) figure 4. total wideband noise voltage r s , source resistance (k ) figure 5. wideband noise figure r s , source resistance (k ) 5.0 50 70 100 200 30 10 20 1.0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bandwidth = 1.0 hz r s 0 i c = 1.0 ma 100 a 10 a bandwidth = 1.0 hz i c = 1.0 ma 100 a 10 a e n , noise voltage (nv) i n , noise current (pa) 2.0 5.0 10 20 50 100 200 500 1000 bandwidth = 10 hz to 15.7 khz i c = 10 a 100 a 1.0 ma 8.0 10 12 14 6.0 0 4.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 bandwidth = 10 hz to 15.7 khz 10 a 100 a i c = 1.0 ma v t , total wideband noise voltage (nv) nf, noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
bc517 http://onsemi.com 4 small?signal characteristics figure 6. capacitance v r , reverse voltage (volts) 5.0 7.0 10 20 3.0 figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i c , collector current (ma) figure 9. collector saturation region i b , base current ( a) 2.0 200k 5.0 0.04 4.0 2.0 1.0 0.8 0.6 0.4 0.2 t j = 25 c c, capacitance (pf) 1.5 2.0 2.5 3.0 1.0 0.5 |h fe |, small?signal current gain h fe , dc current gain v ce , collector?emitter voltage (volts) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 c ibo c obo 0.5 1.0 2.0 0.5 10 20 50 100 200 500 v ce = 5.0 v f = 100 mhz t j = 25 c 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 7.0 10 20 30 50 70 100 200 300 500 t j = 125 c 25 c ?55 c v ce = 5.0 v 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t j = 25 c i c = 10 ma 50 ma 250 ma 500 ma figure 10. ?on? voltages i c , collector current (ma) figure 11. temperature coefficients i c , collector current (ma) 1.6 5.0 ?1.0 v, voltage (volts) 1.4 1.2 1.0 0.8 0.6 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 r v , temperature coefficients (mv/ c) t j = 25 c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 ?2.0 ?3.0 ?4.0 ?5.0 ?6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25 c to 125 c ?55 c to 25 c *r vc for v ce(sat) vb for v be 25 c to 125 c ?55 c to 25 c *applies for i c /i b h fe /3.0
bc517 http://onsemi.com 5 figure 12. thermal response t, time (ms) 1.0 () 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 13. active region safe operating area v ce , collector?emitter voltage (volts) 1.0k 0.4 700 500 300 200 100 70 50 30 20 10 0.6 1.0 2.0 4.0 6.0 10 20 40 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse current limit thermal limit second breakdown limit z jc(t) = r(t) ? r jc t j(pk) ? t c = p (pk) z jc(t) z ja(t) = r(t) ? r ja t j(pk) ? t a = p (pk) z ja(t) 1.0 ms 100 s t c = 25 c 1.0 s design note: use of transient thermal resistance dat a figure a t p p p p p t 1 1/f dutycycle t 1 f t 1 t p peak pulse power = p p
bc517 http://onsemi.com 6 package dimensions to?92 (to?226) case 29?11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x?x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 ??? n 2.04 2.66 p 1.50 4.00 r 2.93 ??? v 3.43 ??? 1 t straight lead bulk pack bent lead tape & reel ammo pack style 17: pin 1. collector 2. base 3. emitter on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 bc517/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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