1 publication date: july 2002 skd00078bed variable capacitance diodes MA26V09 silicon epitaxial planar type for vco features ? good linearity and large capacitance-ratio in c d ? v r relation ? small series resistance r d absolute maximum ratings t a = 25 c parameter symbol rating unit reverse voltage (dc) v r 6v junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c marking symbol: 2s unit: mm 0.60 0.05 1.00 0.05 2 1 3 0.39 +0.01 ? 0.03 0.25 0.05 0.25 0.05 0.50 0.05 0.65 0.01 0.15 0.05 2 1 0.35 0.01 0.05 0.03 0.05 0.03 3 electrical characteristics t a = 25 c 3c parameter symbol conditions min typ max unit reverse current (dc) i r v r = 5 v 10 na diode capacitance c d(1v) v r = 1 v, f = 1 mhz 14.9 16.4 pf c d(3v) v r = 3 v, f = 1 mhz 8.4 9.2 capacitance ratio c d(1v) /c d(3v) 1.69 1.87 ? series resistance * r d v r = 3 v, f = 470 mhz 0.35 ? note) 1. rated input/output frequency: 470 mhz 2. * : measuring instrument; yhp model 4191a rf impedance analyzer 1: anode 2: n.c. 3: cathode ml3-n2 package
MA26V09 2 skd00078bed i r ? t a i f ? v f c d ? v r c d ? t a 0 0.2 0.6 0.8 1.0 1.2 0.4 1.4 0 20 40 60 80 100 120 140 160 180 t a = 60 c ? 40 c 25 c forward voltage v f ( v ) forward current i f ( ma ) 1 100 10 06 5 4 13 2 f = 1 mhz t a = 25 c reverse voltage v r ( v ) diode capacitance c d ( pf ) 0 100 80 20 60 40 f = 1 mhz 0.984 1.036 1.032 1.028 1.024 1.020 1.016 1.012 1.008 1.004 1.000 0.996 0.992 0.988 v r = 1 v 3 v c d ( t a ) c d ( t a = 25 c ) ambient temperature t a ( c ) 0.01 10 1 0.1 0 140 60 20 80 120 40 100 v r = 5 v ambient temperature t a ( c ) reverse current i r ( na )
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