EPA030C-70 updated 01/06/2005 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 1 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised january 2005 features ? non-hermetic low cost ceramic 70mil package ? +22.0 dbm output power at 1db compression ? 8.0 db power gain at 18ghz ? 0.3 x 300 micron recessed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxial heterojunction profile provices extra high power efficiency and high reliability ? idss sorted in 10ma per bin range electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameters/test conditions 1 min typ max units 19.5 22.0 p 1db output power at 1db compression f = 12ghz v ds = 6v, i ds 50% i dss f = 18ghz 22.0 dbm 9.5 11.5 g 1db gain at 1db compression f = 12ghz v ds = 6v, i ds 50% i dss f = 18ghz 8.0 db pae power added efficiency at 1db compression v ds = 6v, i ds 50% i dss f = 12ghz 45 % i dss saturated drain current v ds = 3 v, v gs = 0 v 50 90 130 ma g m transconductance v ds = 3 v, v gs = 0 v 60 95 ms v p pinch-off voltage v ds = 3 v, i ds = 1.0 ma -1.0 -2.5 v bv gd drain breakdown voltage i gd = 1.0ma -11 -15 v bv gs source breakdown voltage i gs = 1.0ma -7 -14 v r th thermal resistance 310* o c/w notes: * overall rth depends on case mounting. maximum ratings at 25 o c symbol parameters absolute 1 continuours 2 v ds drain to source voltage 10 v 6 v v gs gate to source voltage -6 v -3 v i ds drain current idss 65 ma i gsf forward gate current 15 ma 2.5 ma p in input power 19 dbm @ 3db compression t ch channel temperature 175c 150c t stg storage temperature -65/+175c -65/+150c p t total power dissipation 440mw 370mw note: 1. exceeding any of the above ra tings may result in permanent damage. 2. exceeding any of the abov e ratings may reduce mttf below design goals.
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