production process TQPHT 0.5 um phemt foundry service features ? d-mode, -0.8 v vp ? ingaas active layer phemt process ? 0.5 um optical lithography gates ? 17 v d-g breakdown voltage ? high density interconnects: ? 2 global ? 1 local ? high-q passives ? thin film resistors ? high value capacitors ? backside vias optional ? based on production 0.25 m phemt and passives processes ? tom3 fet models available applications ? highly efficient and linear power amplifiers ? low loss, high isolation switches for wireless trans- ceivers and basestations ? higher supply voltage applica- tions ? integrated rf front ends? lna, sw, pa general description triquint?s 0.5 m phemt proces s is based on our production released 0.25 m gate process. TQPHT substitutes lower cost optical lithography in place of e-beam and adds triquint?s unique thick metal scheme. this process is targeted for high efficiency and linearity in power am plifiers, low noise amplifiers, and linear, low loss and high isolation rf switch applications . the TQPHT process offers a d-mode phemt with a ?0.8 v pinch off. the three metal interconnecting layers are encapsu- lated in a high performance dielectric that allows wiring flexibil- ity, optimized die size and plasti c packaging simpli city. precision nicr resistors and high value mim capacitors are included al- lowing higher levels of integrat ion, while maintaining smaller, cost ?effective die sizes. page 1 of 5; rev 2.0 7/22/03 isolation implant pseudomorphic channel n+ metal 2 - 4um metal 1 metal 2 dielectric metal 1 - 2um dielectric dielectric metal 0 nitride isolation implant metal 1 mim metal nicr phemt nicr resistor mim capacitor semi-insulating gaas substrate isolation implant pseudomorphic channel n+ metal 2 - 4um metal 1 metal 2 dielectric metal 1 - 2um dielectric dielectric metal 0 nitride isolation implant metal 1 mim metal isolation implant pseudomorphic channel n+ metal 2 - 4um metal 1 metal 2 dielectric metal 1 - 2um dielectric dielectric metal 0 nitride isolation implant metal 1 mim metal nicr phemt nicr resistor mim capacitor semi-insulating gaas substrate 0.5 um phemt device cross-section fully released production process
production process TQPHT 0.5 um phemt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 2 of 5; rev 2.0 7/22/03 process details @ vds = 3.0v element parameter value units d-mode phemt vp (1ua/um) -0.8 v idss 200 ma/mm idh (ig=1ua/um) 500 ma/mm gm (50% idss) 350 ms/mm breakdown, vds 15 min v ft @ 50% idss 25 ghz common process element details gate length 0.5 m interconnect 3 metal layers mim caps value 630 pf/mm2 resistors nicr 50 ohms/sq bulk 285 ohms/sq vias yes mask layers no vias 12 with vias 14 fmax @ 50% idss 90 ghz coff @vds=0, vgs= -2.5v 0.3 pf/mm ron @ idss 1.8 ohm-mm TQPHT process details maximum ratings storage temperature range -65 to +150 deg c operating temperature range -55 to +150 deg c transistor (vs open; idg = 1ua/um) 17 v capacitor 20 v
production process TQPHT 0.5 um phemt foundry service triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com semiconductors for communications www.triquint.com page 3 of 5; rev 2.0 7/22/03 f req (100.0mhz to 26.10ghz) s(1,1) s(2,2) -8-6-4-202468 -10 10 f req (100.0mhz to 26.10ghz) s(1,2)/0.05 s(2,1) s-parameter data: 300 um device; vds = 3.0v; 50% idss ft versus vgs as a function of vds: 300 um device ft vers us vgs 0 5 10 15 20 25 30 35 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 vgs (volts) ft vds=1.5v vds=3.0v
i-v characteristics: 300 um device gmax versus vgs and frequency: 300 um device production process TQPHT 0.5 um phemt foundry service triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 semiconductors for communications www.triquint.com page 4 of 5; rev 2.0 7/22/03 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com ids versus vgs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0123456789 vds (volts) ids (a) vgs=-0.8v vgs=-0.6v vgs=-0.4v vgs=-0.2v vgs=0v vgs=0.2v vgs=0.4v vg s=0.6v gm ax versus vgs 12 14 16 18 20 22 24 26 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 vgs (volts) gmax (db) freq@2.1ghz freq@4.1ghz freq@6.1ghz freq@8.1ghz freq@10.1ghz freq@12.1ghz
design tool status ? complete design manual now ? device library of circuit elements: fets, diodes, thin film resistors, capacitors, inductors ? design kit for agilent?s ads design environment ? design kit planned for awr microwave office ? layout library in gsd ii format ? cadence development kit with pcells ? layout rule sets for design rule check ? qualified package models for supported package styles please contact your local triquint semi conductor representative/ distributor or foundry services division for additional information: e-mail: sales@triquint.com phone: (5 03) 615-9000 fax: (503) 615-8905 production process TQPHT 0.5 um phemt foundry service triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com semiconductors for communications www.triquint.com page 5 of 5; rev 2.0 7/22/03 prototyping and development ? prototype development quick turn (pdq): ? shared mask set ? run monthly ? hot lot cycle time ? prototype wafer option (pwo): ? customer-specific masks; customer schedule ? 2 wafers delivered ? hot lot cycle time ? with thinning and sawing; optional backside vias process qualification status ? mature process based on tqtx, 150-mm process ? process released to production ? full 150mm wafer process qualification complete ? for more information on quality and reliability, con- tact triquint or visit: www.triquint.com/manufacturing/qr/ applications support services ? tiling of gdsii stream files including pcm ? design rule check services ? layout versus schematic check services ? packaging development engineering ? test development engineering: ? on-wafer ? packaged parts ? thermal analysis engineering ? yield enhancement engineering ? part qualification services ? failure analysis training ? gaas design classes: ? half-day introduction; upon request ? four-day technical training; fall and spring at triquint oregon facility ? for training & pdq schedules, please visit: www.triquint.com/foundry/ manufacturing services ? mask making ? production 150-mm wafer fab ? wafer thinning ? wafer sawing ? substrate vias ? dc diesort testing ? rf on-wafer testing ? plastic packaging ? rf packaged part testing
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