marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc mcl reserves the right to update or change this specification without notice 462/sm/02703/200 issue 1 a marconi company hemt lna 37-42ghz features 20db gain 3 db noise figure description this datasheet shows the performance of a 37 ? 42ghz gallium arsenide low noise amplifier . this product is intended for use in fixed-point and point to point microwave systems. the lna has a single drain supply, with access to each of the gates to enable customer optimization. the die is fabricated using caswell technology's 0 .20 m m gate length, phemt process and is fully protected using silicon nitride passivation for excellent performance and reliability. electrical performance ambient temperature 22 3 c, z o = 50 w , vdd=2v, vg1 & 2 set for id1/2=12ma, vg3 set for id3=20ma u.o.s parameter conditions min typ max units small signal gain 37 ? 40ghz 18 20 db input return loss 3 7 ? 40ghz 6 10 db output return loss 37 ? 40ghz 6 10 db noise figure 37 ? 40ghz 3 4 db stage 1 drain current by adjustment of vg1 12 ma stage 2 drain current by adjustment of vg2 12 ma stage 3 drain current by adjustment of vg3 20 ma p1db 38ghz 8 dbm ip3 38ghz 20 dbm notes all parameters measured on wafer P35-5117-000-200
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc mcl reserves the right to update or change this specification without notice 462/sm/02703/200 issue 1 a marconi company rfow performance ( vd id1,id2,id3) (2v,12ma,12ma,20ma) (2v,20ma,20ma,20ma) gain (db) 0 5 10 15 20 25 30 37 38 39 40 41 42 frequency (ghz) gain (db) reverse isolation (db) 0 20 40 60 80 37 38 39 40 41 42 frequency (ghz) isolation (db) input return loss (db) 0 5 10 15 20 37 38 39 40 41 42 frequency (ghz) return loss (db) output return loss (db) 0 5 10 15 20 37 38 39 40 41 42 frequency (ghz) return loss (db) noise figure (db) 2.0 2.5 3.0 3.5 4.0 37 37.5 38 38.5 39 39.5 40 frequency (ghz) noise figure (db)
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc mcl reserves the right to update or change this specification without notice 462/sm/02703/200 issue 1 a marconi company typical s-parameters (rfow) (vd= 2v ,id1 & 2=12ma, id3=20ma) frequency s11 s21 s12 s22 ( ghz) mag angle mag angle mag angle mag angle 37 0.50 33.4 13.46 11.5 0.0012 -38.9 0.31 132.7 37.2 0.47 32 13.74 5.4 0.0011 -50 0.30 130.2 37.4 0.44 31 13.99 -0.9 0.0007 12.2 0.28 128.6 37.6 0.42 29.5 14.26 -7.5 0.0006 -29.3 0.27 127.4 37.8 0.39 30 14.50 -14.1 0.0007 -76.3 0.26 126.2 38 0.37 30.8 14.68 -20.8 0.0001 177.4 0.24 125.1 38.2 0.35 32.2 14.95 -27.6 0.0004 35.4 0.24 125 38.4 0.34 34.4 15.10 -34.4 0.0003 -1.1 0.22 123.2 38.6 0.33 37.1 15.31 -41 0.0004 25.4 0.21 122.4 38.8 0.33 39.6 15.31 -48.1 0.0005 41.6 0.20 120.3 39 0.33 41.5 15.31 -54.8 0.0005 48.3 0.19 119.2 39.2 0.33 42.8 15.43 -61.2 0.0009 70.1 0.18 118.4 39.4 0.33 45.1 15.52 -67.9 0.0007 86.6 0.17 117.8 39.6 0.34 47.2 15.58 -74.4 0.0009 98.6 0.16 118.7 39.8 0.35 46.6 15.59 -81.2 0.0008 121.2 0.15 119.9 40 0.37 47.5 15.56 -88.1 0.0014 96.5 0.15 121.6 40.2 0.39 47.3 15.51 -94.8 0.0015 81.9 0.14 122.4 40.4 0.41 46.7 15.44 -101.6 0.0015 61.9 0.14 122.3 40.6 0.42 45.1 15.21 -108.3 0.0012 89.3 0.14 121.8 40.8 0.43 43.6 14.99 -114.6 0.0016 91.7 0.13 124 41 0.44 43.4 14.81 -120.4 0.0016 86.3 0.12 123.1 41.2 0.45 41.6 14.79 -126.5 0.0018 95.6 0.11 127 41.4 0.47 40.3 14.74 -132.7 0.0016 92.7 0.11 131.5 41.6 0.48 37.5 14.55 -139.2 0.002 98.7 0.11 134.5 41.8 0.49 35 14.33 -145.5 0.0029 73.5 0.11 139 42 0.51 31.9 14.26 -151.8 0.0029 59.3 0.12 141
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc mcl reserves the right to update or change this specification without notice 462/sm/02703/200 issue 1 a marconi company chip outline die size: 2.16 x 0.94mm rf bond pads (1 & 4): 120 m m x 120 m m all other bond pads: 120 m m x 120 m m die thickness: 100 m m pad details pad function 1 rf input 2 n/c 3 vdd 4 rf output 5 vg3 6 n/c 7 vg2 8 vg1
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc mcl reserves the right to update or change this specification without notice 462/sm/02703/200 issue 1 a marconi company handling and assembly information gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. dice are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. gaas products from caswell technology?s phemt foundry process are 100 m m thick and have through gaas vias to enable grounding to the circuit. windows in the surface passivation above the bond pads are provided to allow wire bonding to the die. the surface to which the die are to be attached should be cleaned with a proprietary de-greasing cleaner. conductive epoxy mounting is recommended. recommended epoxies are ablestick 84-1lmi or 84-1lmit cured at 150 c for 1 hour in a nitrogen atmosphere. the epoxy should be applied sparingly to avoid encroachment of the epoxy on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. eutectic mounting can be used and entails the use of a gold-tin ( ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface. the preferred method of mounting is the use of a machine such as a mullins 8-140 die bonder. this utilises a heated collet and workstation with a facility for applying a scrubbing action to ensure total wetting and avoid the formation of voids. dry nitrogen gas is directed across the work piece. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280 c (note: gold germanium with a higher melting temperature should be avoided, in particular for mmics). the work station temperature should be 310 c 10 c. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. the strength of the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing. the P35-5117-000-200 amplifier die has gold bond pads. the recommended wire bonding procedure uses 25 m m (0.001?) 99.99% pure gold wire with 0.5-2% elongation. thermo-compression wedge bonding is preferred though thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. a work station temperature of 260 c 10 c with a wedge tip temperature of 120 c 10 c is recommended. the wedge force should be 45 5 grams. bonds should be made from the bond pads on the die to the package or substrate. the rf bond pads at the input and output are 120 m m x 120 m m; all other bond pads are 120 m m x 120 m m. the P35-5117-000-200 has been designed to include the inductance of two 25 m m bond wires at both the input and output, facilitating the integration of the die into a 50 w environment, these should be kept to a minimum length. operating and biasing of the P35-5117-000-200 the P35-5117-000-200 is a three-stage low noise amplifier. the drain biases for all three stages (vd1, vd2 & vd3) are linked on chip and 2 volts should be connected to vdd. the gate voltages (vg1, vg2 & vg3) are set to give 12ma of drain current in each of the first two stages and 20ma in the third stage drain. the separate gate voltage supplies for all stages can be combined into single supply (vgg). dc bias supplies should be decoupled to ground using 100pf chip capacitors placed close to the chip with short bondwires to the amplifier bond pads.
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc mcl reserves the right to update or change this specification without notice 462/sm/02703/200 issue 1 a marconi company typical bonding detail absolute maximum ratings max vdd + 5v max vgg -2v max channel temperature 150 c storage temperature -65 c to +150 c ordering information P35-5117-000-200
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