4-1 fsgye035r radiation hardened, segr resistant n-channel power mosfets fairchild star*power? rad hard mosfets have been specifically developed for high performance applications in a commercial or military space environment. star*power mosfets offer the system designer both extremely low r ds(on) and gate charge allowing the development of low loss power subsystems. star*power gold fets combine this electrical capability with total dose radiation hardness up to 100k rads while maintaining the guaranteed performance for single event effects (see) which the fairchild fs families have always featured. the fairchild family of star*power fets includes a series of devices in various voltage, current and package styles. the portfolio consists of star*power and star*power gold products. star*power fets are optimized for total dose and r ds(on) while exhibiting see capability at full rated voltage up to an let of 37. star*power gold fets have been optimized for see and gate charge combining see performance to 80% of the rated voltage for an let of 82 with extremely low gate charge characteristics. this mosfet is an enhancement-mode silicon-gate power field effect transistor of the vertical dmos (vdmos) structure. it is specifically designed and processed to be radiation tolerant. the mosfet is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. as with conventional mosfets these radiation hardened mosfets offer ease of voltage control, fast switching speeds and ability to parallel switching devices. reliability screening is available as either txv or space equivalent of mil-prf-19500. *current is limited by the package capability formerly available as type ta45224w. features ? 20a*, 60v, r ds(on) = 0.030 w ? uis rated ? total dose - meets pre-rad specifications to 100k rad (si) ? single event - safe operating area curve for single event effects - see immunity for let of 82mev/mg/cm 2 with v ds up to 80% of rated breakdown ? dose rate - typically survives 3e9 rad (si)/s at 80% bv dss - typically survives 2e12 if current limited to i as ? photo current - 1.2na per-rad (si)/s typically ? neutron - maintain pre-rad specifications for 3e13 neutrons/cm 2 - usable to 3e14 neutrons/cm 2 symbol packaging smd.5 ordering information rad level screening level part number/brand 10k engineering samples fsgye035d1 100k txv fsgye035r3 100k space FSGYE035R4 tm d g s data sheet july 2001 file number 5006 i tle b jec t ho y w s () e ato o ci o m ar g e d e e o n es o c e w m ar ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-2 absolute maximum ratings t c = 25 o c, unless otherwise specified fsgye035r units drain to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v ds 60 v drain to gate voltage (r gs = 20k w ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v dgr 60 v continuous drain current t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 20 (note) a t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 20 (note) a pulsed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 80 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gs 30 v maximum power dissipation t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 42 w t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 17 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 w/ o c single pulsed avalanche current, l = 100 m h, (see test figure) . . . . . . . . . . . . . . . . . . . . . . i as 57 a continuous source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i s 20 a pulsed source current (body diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i sm 80 a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c lead temperature (during soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l (distance >0.063in (1.6mm) from case, 10s max) 300 o c weight (typical) 1.0 (typical) g caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. *current is limited b y the packa g e capabilit y electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 1ma, v gs = 0v 60 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 1ma t c = -55 o c--5.5v t c = 25 o c 2.0 - 4.5 v t c = 125 o c1.0--v zero gate voltage drain current i dss v ds = 48v, v gs = 0v t c = 25 o c--25 m a t c = 125 o c--250 m a gate to source leakage current i gss v gs = 30v t c = 25 o c - - 100 na t c = 125 o c - - 200 na drain to source on-state voltage v ds(on) v gs = 12v, i d = 20a - - 0.600 v drain to source on resistance r ds(on)12 i d = 20a, v gs = 12v t c = 25 o c - 0.025 0.030 w t c = 125 o c--0.051 w turn-on delay time t d(on) v dd = 30v, i d = 20a, r l = 1.5 w , v gs = 12v, r gs = 7.5 w --20ns rise time t r --55ns turn-off delay time t d(off) --30ns fall time t f --15ns total gate charge q g(12) v gs = 0v to 12v 30v < v dd < 48v, i d = 20a -2428nc gate charge source q gs -1012nc gate charge drain q gd -57nc gate charge at 20v q g(20) v gs = 0v to 20v - 56 - nc threshold gate charge q g(th) v gs = 0v to 2v - 3 - nc plateau voltage v (plateau) i d = 20a, v ds = 15v - 6 - v input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz - 1550 - pf output capacitance c oss -540- pf reverse transfer capacitance c rss -13-pf thermal resistance junction to case r q jc - - 1.67 o c/w fsgye035r ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-3 source to drain diode specifications parameter symbol test conditions min typ max units forward voltage v sd i sd = 20a - - 1.2 v reverse recovery time t rr i sd = 20a, di sd /dt = 100a/ m s - - 110 ns reverse recovery charge q rr -0.31- m c electrical specifications up to 100k rad t c = 25 o c, unless otherwise specified parameter symbol test conditions min max units drain to source breakdown volts (note 3) bv dss v gs = 0, i d = 1ma 60 - v gate to source threshold volts (note 3) v gs(th) v gs = v ds , i d = 1ma 2.0 4.5 v gate to body leakage (notes 2, 3) i gss v gs = 30v, v ds = 0v - 100 na zero gate leakage (note 3) i dss v gs = 0, v ds = 48v - 25 m a drain to source on-state volts (notes 1, 3) v ds(on) v gs = 12v, i d = 20a - 0.600 v drain to source on resistance (notes 1, 3) r ds(on)12 v gs = 12v, i d = 20a - 0.030 w notes: 1. pulse test, 300 m s max. 2. absolute value. 3. insitu gamma bias must be sampled for both v gs = 12v, v ds = 0v and v gs = 0v, v ds = 80% bv dss . single event effects (seb, segr) note 4 test symbol environment (note 5) applied v gs bias (v) (note 7) maximum v ds bias (v) (note 6 ) typical let (mev/mg/cm) typical range ( m ) single event effects safe operating area seesoa 37 36 -5 60 60 32 -2 60 60 32 -4 30 82 28 0 48 82 28 -2 30 notes: 4. testing conducted at brookhaven national labs or texas a&m. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. ion species: let = 37, br or kr; let = 60, i or xe; let = 82, au 7. does not exhibit single event burnout (seb) or single event gate rupture (segr). performance curves unless otherwise specified figure 1. single event effects safe operating area figure 2. typical see signature curve 40 0 0 let = 60mev/m g /cm 2 , range = 32 m let = 37mev/m g /cm 2 , range = 36 m let = 82mev/m g /cm 2 , range = 28 m v ds (v) -4 60 20 -6 -2 10 30 50 70 v gs ( v ) fluence = 1e5 ions/cm 2 ( typical ) -1 -3 -5 v ds 40 0 0 60 20 20 70 50 30 10 40 5 10 15 25 30 35 negative v gs bias (v) let = 37 let = 82 let = 60 fsgye035r ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-4 figure 3. typical drain inductance required to limit gamma dot current to i as figure 4. maximum continuous drain current vs temperature figure 5. forward bias safe operating area figure 6. basic gate charge waveform figure 7. typical normalized r ds(on) vs junction temperature figure 8. typical output characteristics performance curves unless otherwise specified (continued) 300 100 10 limiting inductance (henry) drain supply (v) 1000 ilm = 10a 300a 1e-4 1e-5 1e-6 30 100a 30a 1e-7 1e-3 i d , drain (a) t c , case temperature ( o c) 150 100 50 0 -50 0 12 4 8 20 16 24 100 10 1 1 10 100 i d , drain current (a) v ds , drain-to-source voltage (v) t c = 25 o c 100 m s operation in this area may be limited by r ds(on) 10ms 1ms 200 200 charge q gd q g v g q gs 12v 2.5 2.0 1.5 1.0 0.5 -80 -40 0 40 80 120 160 t j , junction temperature ( o c ) normalized r ds(on) pulse duration = 250ms, v gs = 12v, i d = 20a 0 10 8 6 4 2 0 80 40 0 i d , drain-to-source current (a) 100 60 20 v ds , drain-to-source voltage (v) v gs = 8v v gs = 10v v gs = 12v v gs = 14v v gs = 6v fsgye035r ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-5 figure 9. normalized maximum transient thermal response figure 10. unclamped inductive switching performance curves unless otherwise specified (continued) normalized thermal response (z q jc ) t, rectangular pulse duration (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 0.001 0.01 0.1 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z q jc + t c single pulse 0.01 0.02 0.05 0.1 0.5 0.2 p dm t 1 t 2 10 100 10 1 1 t av , time in avalanche (ms) 10 i as , avalanche current (a) t av = (l/r) ln [(i as *r) / (1.3 rated bv dss - v dd ) + 1] t av = (l) (i as ) / (1.3 rated bv dss - v dd ) if r = 0 starting t j = 150 o c starting t j = 25 o c if r 1 0 200 .01 .1 test circuits and waveforms figure 11. unclamped energy test circuit figure 12. unclamped energy waveforms t p v gs 20v l + - v ds v dd dut vary t p to obtain required peak i as 0v 50 w 50 w 50v-150v i as + - electronic switch opens when i as is reached current transformer v dd v ds bv dss t p i as t av fsgye035r ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-6 screening information screening is performed in accordance with the latest revision in effect of mil-prf-19500, (screening information table). figure 13. resistive switching test circuit figure 14. resistive switching waveforms test circuits and waveforms v ds dut r gs 0v v gs = 12v v dd r l t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs t on delta tests and limits (jantxv equivalent, jans equivalent) t c = 25 o c, unless otherwise specified parameter symbol test conditions max units gate to source leakage current i gss v gs = 30v 20 (note 8) na zero gate voltage drain current i dss v ds = 80% rated value 25 (note 8) m a drain to source on resistance r ds(on) t c = 25 o c at rated i d 20% (note 9) w gate threshold voltage v gs(th) i d = 1.0ma 20% (note 9) v notes: 8. or 100% of initial reading (whichever is greater). 9. of initial reading. screenin g information test jantxv equivalent jans equivalent unclamped inductive switching v gs(peak) = 20v, l = 0.1mh; limit = 57a v gs(peak) = 20v, l = 0.1mh; limit = 57a thermal response t h = 10ms; v h = 25v; i h = 1a; limit = 74mv t h = 10ms; v h = 25v; i h = 1a; limit = 74mv gate stress v gs = 45v, t = 250 m sv gs = 45v, t = 250 m s pind optional required pre burn-in tests (note 10) mil-prf-19500 group a, subgroup 2 (all static tests at 25 o c) mil-prf-19500 group a, subgroup 2 (all static tests at 25 o c) steady state gate bias (gate stress) mil-prf-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours mil-prf-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours interim electrical tests (note 10) all delta parameters listed in the delta tests and limits table all delta parameters listed in the delta tests and limits table steady state reverse bias (drain stress) mil-prf-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 160 hours mil-prf-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 240 hours pda 10% 5% final electrical tests (note 10 mil-prf-19500, group a, subgroup 2 mil-prf-19500, group a, subgroups 2 and 3 note: 10. test limits are identical pre and post burn-in. additional tests parameter symbol test conditions max units safe operating area soa v ds = 48v, t = 10ms 3.5 a thermal impedance d v sd t h = 100ms; v h = 25v; i h = 1a 165 mv fsgye035r ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-7 rad hard data packages - fairchild power transistors txv equivalent 1. rad hard txv equivalent - standard data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet d. group a - attributes data sheet e. group b - attributes data sheet f. group c - attributes data sheet g. group d - attributes data sheet 2. rad hard txv equivalent - optional data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet - pre and post burn-in read and record data d. group a - attributes data sheet e. group b - attributes data sheet - pre and post read and record data for intermittent operating life (subgroup b3) - bond strength data (subgroup b3) - pre and post high temperature operating life read and record data (subgroup b6) f. group c - attributes data sheet - pre and post read and record data for intermittent operating life (subgroup c6) - bond strength data (subgroup c6) g. group d - attributes data sheet - pre and post rad read and record data class s - equivalents 1. rad hard s equivalent - standard data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data f. group a - attributes data sheet g. group b - attributes data sheet h. group c - attributes data sheet i. group d - attributes data sheet 2. rad hard max. s equivalent - optional data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data - x-ray and x-ray report f. group a - attributes data sheet - subgroups a2, a3, a4, a5 and a7 data g. group b - attributes data sheet - subgroups b1, b3, b4, b5 and b6 data h. group c - attributes data sheet - subgroups c1, c2, c3 and c6 data i. group d - attributes data sheet - pre and post radiation data fsgye035r ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-8 fsgye035r smd.5 3 pad ceramic leadless chip carrier d 1 e 1 e 2 d 2 b a d e 1 - gate 2 - source 3 - drain 1 2 3 symbol inches millimeters notes min max min max a 0.108 0.118 2.74 2.99 - b 0.090 0.100 2.28 2.54 - d 0.291 0.301 7.39 7.64 - d 1 0.281 0.291 7.13 7.39 - d 2 0.070 0.080 1.78 2.03 - e 0.395 0.405 10.03 10.28 - e 1 0.220 0.230 5.58 5.84 - e 2 0.120 0.130 3.04 3.30 - notes: 1. no current jedec outline for this package. 2. controlling dimension: inch. 3. revision 2 dated 11-99. ?2001 fairchild semiconductor corporation fsgye035r rev. a1
4-9 fsgye035r trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensi g na? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optpelectronics? quiet series? silent switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 s y ncfet? tin y lo g ic? trutranslation? uhc? ultrafet ? vcx? star*power is used under license disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fsgye035r rev. a1 ?2001 fairchild semiconductor corporation
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