any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel silicon mosfet dc/dc converter applications ordering number:enn5316a 2SK2555 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 81000ts (koto) ta-0529 no.5316C1/4 6.5 2.3 0.5 1.5 5.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3 package dimensions unit:mm 2083b [2SK2555] features low on-resistance. ultrahigh-speed switching. 4v drive. 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp unit:mm 2092b [2SK2555] 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp-fa 5.0 6.5 0.85 0.7 0.6 1.5 5.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3
2SK2555 no.5316C2/4 specifications absolute maximum ratings at ta = 25?c ?c ?c electrical characteristics at ta = 25?c tc=25?c switching time test circuit pw=10 s d.c. 1% 10v 0v p. g 50 g s d i d =6a r l =2.5 v dd =15v v out 2SK2555 v in v in r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e c r u o s - o t - n i a r dv s s d 0 3v e g a t l o v e c r u o s - o t - e t a gv s s g 5 2 v ) c d ( t n e r r u c n i a r di d 2 1a ) e s l u p ( t n e r r u c n i a r di p d w p e l c y c y t u d , s 0 1 % 18 4a n o i t a p i s s i d r e w o p e l b a w o l l ap d 1w 0 3w e r u t a r e p m e t l e n n a h ch c t 0 5 1 e r u t a r e p m e t e g a r o t sg t s t 0 5 1 + o t 5 5 C r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e g a t l o v n w o d k a e r b e c r u o s - o t - n i a r dv s s d ) r b ( i d v , a m 1 = s g 0 =0 3v t n e r r u c n i a r d e g a t l o v e t a g - o r e zi s s d v s d v , v 0 3 = s g 0 =0 0 1a t n e r r u c e g a k a e l e c r u o s - o t - e t a gi s s g v s g v , v 0 2 = s d 0 =0 1 a e g a t l o v f f o t u cv ) f f o ( s g v s d i , v 0 1 = d a m 1 =0 . 15 . 2v e c n a t t i m d a r e f s n a r t d r a w r o f| s f y |v s d i , v 0 1 = d a 6 =68s e c n a t s i s e r e t a t s - n o e c r u o s - o t - n i a r d c i t a t s r s d 1 ) n o (i d v , a 6 = s g v 0 1 =6 36 4m w r s d 2 ) n o (i d v , a 4 = s g v 4 =8 58 7m w e c n a t i c a p a c t u p n is s i cv s d z h m 1 = f , v 0 1 =0 5 6f p e c n a t i c a p a c t u p t u os s o cv s d z h m 1 = f , v 0 1 =0 8 4f p e c n a t i c a p a c r e f s n a r t e s r e v e rs s r cv s d z h m 1 = f , v 0 1 =0 9f p e m i t y a l e d n o - n r u tt d ) n o (t i u c r i c t s e t d e i f i c e p s e e s5 1s n e m i t e s i rt r t i u c r i c t s e t d e i f i c e p s e e s0 7 1s n e m i t y a l e d f f o - n r u tt d ) f f o (t i u c r i c t s e t d e i f i c e p s e e s0 5s n e m i t l l a ft f t i u c r i c t s e t d e i f i c e p s e e s5 4s n e g r a h c e t a g l a t o tg qv s d v , v 0 1 = s g i , v 0 1 = d a 1 =0 2c n e g r a h c e c r u o s - o t - e t a gs g qv s d v , v 0 1 = s g i , v 0 1 = d a 1 =3c n e g r a h c " r e l l i m " n i a r d - o t - e t a gd g qv s d v , v 0 1 = s g i , v 0 1 = d a 1 =6c n e g a t l o v d r a w r o f e d o i dv d s i s v , a 6 = s g 0 =0 . 12 . 1v
2SK2555 no.5316C3/4 0 i d -- v gs 20 15 5 10 0 0 13456 2 0 i d -- v ds 20 15 10 5 2 14 810 6 35 9 7 3.8v 3.6v 3.4v 3.2v 3.0v v gs =2.8v it01446 it01447 0 r ds (on) -- v gs 60 70 80 90 100 110 120 50 40 30 20 10 0 8 2121416 610 418 it01448 i d =4a, v gs =4v i d =6a, v gs =10v --60 r ds (on) -- tc 60 70 80 90 100 110 120 130 140 150 50 40 30 20 10 0 40 --40 --20 120 20 60 80 100 160 140 0 it01449 4.0v tc=25 c 5.0v 10.0v v ds =10v tc=75 c --25 c 25 c i d =4a 6a tc=25 c gate-to-source voltage, v gs ? static drain-to-source on-state resistance, r ds (on) ? w static drain-to-source on-state resistance, r ds (on) ? w drain current, i d ? drain-to-source voltage, v ds ? drain current, i d ? gate-to-source voltage, v gs ? case temperature, tc ?c sw time -- i d 7 10 2 5 7 100 3 2 5 3 0.1 23 57 7 1.0 23 23 57 10 it01452 v ds =15v v gs =10v t d (on) t r t d (off) t f 0 ciss, coss, crss -- v ds 3 7 2 5 3 2 5 3 7 2 5 1000 100 10 10 15 20 25 30 5 it01453 f=1mhz ciss coss crss i s -- v sd 5 7 2 0.1 1.0 10 3 5 7 2 3 0.7 0.8 0.9 1.0 1.1 1.2 0.6 0.5 it01451 1.0 10 5 2 2 3 7 5 3 7 0.1 7 3 1.0 22 5 7 3 25 7 5 10 it01450 75 c 25 c tc= --25 c v ds =10v v gs =0 tc=75 c 25 c -- 2 5 c forward transfer admittance, | y fs| s drain current, i d ? | y fs | - i d forward current, i s ? diode forward voltage, v sd ? ciss, coss, crss pf drain-to-source voltage, v ds ? switching time, sw time ns drain current, i d ?
specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2000. specifications and information herein are subject to change without notice. 2SK2555 ps no.5316C4/4 a s o 1.0 10 5 7 3 2 100 5 7 3 2 5 7 1.0 23 57 23 57 10 23 5 it01455 30 35 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 p d -- tc it01456 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 p d -- ta it01480 6 5 4 3 10 9 8 7 1 2 0 0 2 4 6 8 101214161820 v gs -- q g it01454 v ds =10v i d =1a i d =12a i dp =48a dc operation 10ms 1ms 100 s <10 s operation in this area is limited by r ds (on). drain current ,i d ? drain-to-source voltage, v ds ? tc=25 c single pulse gate-to-source voltage, v gs v total gate charge, qg nc allowable power dissipation, p d ? allowable power dissipation, p d ? ambient temperature, ta ?c case temperature, tc ?c
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