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photocoupler ps2703-1 high isolation voltage high collector to emitter voltage type sop multi photocoupler ? nepoc series ? description t he ps2703-1 is an optically coupled isolator containing a gaas li ght emitting diode and an npn silicon phototransistor. t h is is mounted in a plastic sop (small ou tline package) for high density applications. t h is package has shield effect to cut off ambient light. features ? high isolation voltage (bv = 3 750 vr.m.s.) ? high collector to emitter voltage (v ce o = 120 v) ? sop (small outline package) ty pe ? each isolated channel per package ? high-speed sw itching (t r , t f = 10 s t yp.) ? t aping product number: ps2703-1-f 3 , f 4 ? safety standards ? ul approved: f ile no. e72422 ? bsi approved: f ile no. 8219/8220 ? csa approved: f ile no. ca 101391 ? din en60747-5-2 (vde0884 pa rt2) approved (option) applications ? hy brid ic ? t e lephone/f a x ? f a /oa equipment ? programmable logic controllers ? pow e r supply the mark ? show s major rev i sed points. document no. pn10242ej02v0ds (2nd edition) date published march 2006 cp(k) ? nec compound semiconductor devices, ltd. 1988, 2006
ps2703-1 package dimensions (in millimeters) ps2703-1 4.00.5 7.00.3 4.4 0.50.3 0.15 +0.10 ?0.05 top view 1. anode 2. cathode 3. emitter 4. collector 43 12 2.0 0.10.1 2.1.0.2 2.54 0.4 +0.10 ?0.05 0.25 m marking example 2703 m601 trade mark type number assembly lot no. 1 pin mark m6 0 1 week assembled year assembled (last 1 digit) ctr rank name *1 bar : pb-free remark "ps" and "-1" are omitted from original type number *1 data sheet pn10242ej02v0ds 2
ps2703-1 ordering information part number order number solder plating specification packing sty l e safety standard approval application part number *1 p s 2 7 0 3 - 1 p s 2 7 0 3 - 1 - a p b - f r e e magazine ca se 100 pcs standard products ps2703-1 ps2703-1-f3 PS2703-1-F3-A embossed tape 3 500 pcs/reel (ul, bsi, csa p s 2 7 0 3 - 1 - f 4 p s 2 7 0 3 - 1 - f 4 - a a p p r o v e d ) p s 2 7 0 3 - 1 - v p s 2 7 0 3 - 1 - v - a magazine case 100 pcs din en60747-5-2 p s 2 7 0 3 - 1 - v - f 3 p s 2 7 0 3 - 1 - v - f 3 - a embossed tape 3 500 pcs/reel (vde0884 part2) p s 2 7 0 3 - 1 - v - f 4 p s 2 7 0 3 - 1 - v - f 4 - a a p p r o v e d ( o p t i o n ) *1 f o r the application of the safety st andard, follow i ng part number should be used. data sheet pn10242ej02v0ds 3
ps2703-1 absolute maximum ratings (t a = 25 c, unless otherw ise specified) p a r a m e t e r s y m b o l r a t i n g s u n i t diode forw ard current (dc) i f 5 0 m a r e v e r s e v o l t a g e v r 6 v pow e r dissipation derating ? p d / c 0 . 8 mw/ c p o w e r d i s s i p a t i o n p d 8 0 m w peak forw ard current *1 i fp 1 a transistor collector to emitter voltage v ceo 1 2 0 v emitter to collector voltage v eco 6 v c o l l e c t o r c u r r e n t i c 3 0 m a pow e r dissipation derating ? p c / c 1 . 5 mw/ c p o w e r d i s s i p a t i o n p c 1 5 0 m w isolation voltage *2 b v 3 7 5 0 v r . m . s . operating ambient temperature t a ?55 to +100 c storage temperature t st g ?55 to +150 c *1 pw = 100 s, duty cy cle = 1% *2 ac voltage for 1 minute at t a = 25c, rh = 60% betw een input and output pins 1-2 shorted toget her, 3-4 shorted together. data sheet pn10242ej02v0ds 4
ps2703-1 electrical characteristics (t a = 25 c) p a r a m e t e r s y m b o l c o n d i t i o n s m i n . ty p . m a x . u n i t d i o d e f o r w ard v o l t a g e v f i f = 5 ma 1.1 1.4 v r e v e r s e c u r r e n t i r v r = 5 v 5 a t e r m i n a l c a p a c i t a n c e c t v = 0 v, f = 1 mhz 30 pf transistor collector to emitter dark current i ceo i f = 0 ma, v ce = 120 v 100 na coupled current transfer ratio ctr i f = 5 ma, v ce = 5 v 50 150 400 % ( i c /i f ) *1 i f = 1 ma, v ce = 5 v 10 80 collector saturation voltage v ce (s at) i f = 10 ma, i c = 2 ma 0.3 v i s o l a t i o n r e s i s t a n c e r i-o v i-o = 1 kv dc 1 0 11 ? i s o l a t i o n c a p a c i t a n c e c i-o v = 0 v, f = 1 mhz 0.4 pf rise time *2 t r v cc = 5 v, i c = 2 ma, r l = 1 k ? 1 0 s fal l ti me *2 t f 1 0 *1 ct r rank ctr rank ctr (%) conditions k 200 to 400 i f = 5 ma, v ce = 5 v 8 0 t o i f = 1 ma, v ce = 5 v l 100 to 300 i f = 5 ma, v ce = 5 v 2 5 t o i f = 1 ma, v ce = 5 v m 50 to 150 i f = 5 ma, v ce = 5 v 1 0 t o i f = 1 ma, v ce = 5 v *2 t e st circuit for sw itching time pw = 100 s duty cycle = 1/10 pulse input v cc v out r l = 1 k ? 50 ? i f in monitor data sheet pn10242ej02v0ds 5
ps2703-1 typical characteristics (t a = 25c, unless otherw ise specified) 100 50 25 0 75 25 50 75 100 ambient temperature t a (?c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature 200 150 100 50 0 25 50 75 100 ambient temperature t a (?c) transistor power dissipation p c (mw) transistor power dissipation vs. ambient temperature 1.5 mw/?c 10 0.1 0.5 5 1 0.2 0.6 1.0 0.0 0.4 0.8 collector saturation voltage v ce (sat) (v) collector current i c (ma) collector current vs. collector saturation voltage i f = 25 ma 1.5 ma 1 ma 0.5 ma 10 ma 5 ma 2.5 ma 2 ma 10 4 0 8 6 2 61 24 8 collector to emitter voltage v ce (v) collector current i c (ma) collector current vs. collector to emitter voltage 0 i f = 10 ma 4 ma 2 ma 3 ma 1 ma 5 ma 0.5 ma 100 0.1 1 0.01 10 0.6 1.0 1.4 1.6 0.8 1.2 forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage +25 ?c 0 ?c ?25 ?c ?55 ?c t a = +100 ?c +75 ?c +50 ?c 50 000 0.1 500 5 000 10 10 000 1 000 100 50 5 1 0.5 ?60 0 4 0 8 0 ?40 ?20 20 60 100 ambient temperature t a (?c) collector to emitter dark current vs. ambient temperature collector to emitter dark current i ceo (na) v ce = 40 v 24 v 10 v remark t he graphs indicate nominal characteristics. data sheet pn10242ej02v0ds 6
ps2703-1 300 250 150 50 0 200 100 0.1 0.5 5 50 11 0 forward current i f (ma) current transfer ratio ctr (%) current transfer ratio vs. forward current v ce = 5 v v cc = 5v, i c = 2 ma 100 0.1 10 1 10 1 k 10 k 100 load resistance r l ( ? ) switching time vs. load resistance switching time t ( s) t d t f t r t s 1.2 0.4 0.0 1.0 0.6 0.2 0.8 500 11 0 0.5 50 100 5 frequency f (khz) normalized gain g v frequency response r l = 1 k ? 510 ? 300 ? 100 ? i f = 5 ma, v cc = 5 v, ctr = 90 % 1 000 100 10 1 0.1 1 1 0 100 load resistance r l (k ? ) switching time vs. load resistance switching time t ( s) t f t s t r t d 1.2 1.0 0.0 0.4 0.2 0.8 0.6 10 2 10 3 11 0 4 10 5 10 6 time (hr) long time ctr degradation ctr dgradation (relative value) i f = 1 ma, t a = 25 ?c i f = 5 ma, t a = 25 ?c i f = 20 ma, t a = 25 ?c i f = 20 ma, t a = 60 ?c 1.2 0.6 0.0 0.8 1.0 0.4 0.2 02 5 50 100 ?55 ?25 75 ambient temperature t a (?c) normalized current transfer ratio vs. ambient temperature normalized current transfer ratio ctr normalized to 1.0 at t a = 25 ?c, i f = 5 ma, v ce = 5 v remark t he graphs indicate nominal characteristics. data sheet pn10242ej02v0ds 7
ps2703-1 taping specifications (in millimeters) tape direction outline and dimensions (reel) packing: 3 500 pcs/reel 2.00.5 r 1.0 13.00.2 21.00.8 3302.0 1001.0 2.0 0.5 11.9 to 15.4 outer edge of flange 17.51.0 13.51.0 13.00.2 ps2703-1-f3 ps2703-1-f4 1.550.1 2.00.05 4.00.1 1.750.1 4.60.1 2.9 max. 0.3 8.00.1 outline and dimensions (tape) 2.40.1 1.5 +0.1 ?0 7.40.1 5.50.05 12.00.2 data sheet pn10242ej02v0ds 8
ps2703-1 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? t i me of peak reflow temperature 10 seconds or less ? t i me of temperature higher than 220 c 60 seconds or less ? t i me to preheat temperature from 120 to 180 c 120 30 s ? number of reflow s t h ree ? f l ux rosin flux containing small amount of chlorine (t he flux w i th a maximum chlorine content of 0.2 w t % is recommended.) 12030 s (preheating) 220?c 180?c package surface temperature t (?c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260?c max. 120?c (2) wav e soldering ? t e mperature 260 c or below (molten solder temperature) ? t i me 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allow ed to be dipped in solder including plastic mold portion.) ? f l ux rosin flux containing small amount of chlorine (t he flux w i th a maximum chlorine content of 0.2 w t % is recommended.) (3 ) solde r ing by s o lde r ing iron ? peak temperature (l ead part temperature) 350 c or below ? t i me (each pins) 3 seconds or less ? f l ux rosin flux containing small amount of chlorine (t he flux w i th a maximum chlorine content of 0.2 w t % is recommended.) (a) soldering of leads should be made at the poi nt 1.5 to 2.0 mm from the root of the lead. (b) please be sure that the temperatur e of the package w oul d not be heated over 100 c. data sheet pn10242ej02v0ds 9
ps2703-1 (4 ) ca utions ? f l uxes avoid removing the residual flux w i th freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aw are that w hen voltage is applied suddenly bet w een the photocoupler?s i nput and output or betw een collector-emitters at startup, the output transistor may enter the on state, even if the voltage is w i thin the absolute max i mum ratings. 3. measurement conditions of current transfer ra tios ( c tr) , w h ich differ according to photocoupler check the setting values before use, since the forw ard current conditions at ct r measurement differ according to product. w hen using products other than at the specified forw ard current, the char acteristics curves may differ from the standard curves due to ct r value variati ons or the like. t heref ore, check the characte ristics under the actual operating conditions and thoroughly take variations or the like into cons ideration before use. usage cautions 1. protect against static electricity w hen handling. 2. avoid storage at a high te mperature and high humidity . data sheet pn10242ej02v0ds 10
ps2703-1 specification of vde marks license document (vde0884) p a r a m e t e r s y m b o l s p e c k u n i t application classification (din vde 0109) for rated line voltages 300 vr.m.s. iv for rated line voltages 600 vr.m.s. iii climatic test class (din iec 68 teil 1/09.80) 55/100/21 dielectric strength maximum oper ating isolation voltage. test voltage (partial discharge test procedure a for ty pe test and random test) u io rm 7 1 0 v peak u pr = 1.2 u io rm , p d < 5 pc u pr 8 5 0 v peak test voltage (partial discharge test procedure b for all devices test) u pr = 1.6 u io rm , p d < 5 pc u pr 1 1 4 0 v peak highest permissible overvoltage u tr 6 0 0 0 v peak degree of pollution (din vde 0109) 2 clearance distance > 5 mm creepage distance > 5 mm comparative tracking index (din iec 112/vde 0303 part 1) cti 175 material group (din vde 0109) iii a storage temperature range t st g ?55 to +150 c operating temperature range t a ?55 to +100 c isolation resistance, minimum value v io = 500 v dc at t a = 25 c r i s m i n . 10 12 ? v io = 500 v dc at t a max. at least 100 c r i s m i n . 10 11 ? safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) package temperature tsi 150 c current (input current i f , psi = 0) isi 200 ma pow e r (output or total pow er dissipation) psi 300 mw isolation resistance v io = 500 v dc at t a = 175 c (tsi) ris min. 10 9 ? data sheet pn10242ej02v0ds 11
ps2703-1 when the product(s) listed in this document is subject to an y applicab le impor t or e xpor t control la ws and regulation of the au thor ity ha ving competent jur isdiction, such product(s) shall not be impor ted or e xpor ted without obtaining the impor t or e xpor t license . m8e 00. 4 - 0110 the information in this document is current as of march, 2006. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use o f such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility o f customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that t h e possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications o f a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. " standard" : computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots " special" : transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) " specific" : aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. i f customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec' s willingness to support a given application. (note) ( 1 ) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ? data sheet pn10242ej02v0ds 12
ps2703-1 caution gaas products this product uses gallium arsenide (g aas). gaas vapor and pow der are hazardous to human health if inhaled or ingested, so please observe the follow i ng points. ? follow related law s and ordinances w hen disposi ng of the product. if there are no applicable law s and/or ordinances, dispose of the product as recommended below . 1. commission a disposal company able to (w it h a license to) collect, transport and dispose of materials that contain arsenic and other such industrial w a ste materials. 2. exclude the product from general industria l w a ste and household garbage, and ensure that the product is controlled (as industrial w a ste subjec t to special control) up until final disposal. ? do not burn, destroy , cut, crush, or chemically dissolve the product. ? do not lick the product or in any w a y allow it to enter the mouth. nec compound semiconductor de vices hong k ong limited e-mail: ncsd-hk@elhk.nec.com.hk (sales , technical and gener al) hong k ong head office t aipei br anch office k orea br anch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 f ax: +852-3107-7309 f ax: +886-2-2545-3859 f ax: +82-2-558-5209 nec electr onics (eur ope) gmbh http://www .ee .nec.de/ tel: +49-211-6503-0 f ax: +49-211-6503-1327 calif ornia eastern laboratories, inc. http://www .cel.com/ tel: +1-408-988-3500 f ax: +1-408-988-0279 0504 nec compound semiconductor de vices, ltd. http://www .ncsd.necel.com/ e-mail: salesinf o@ml.ncsd.necel.com (sales and gener al) techinf o@ml.ncsd.necel.com (technical) sales division tel: +81-44-435-1573 f ax: +81-44-435-1579 for fur ther inf ormation, please contact

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