jiang su changjiang electronic s technolog y co ., ltd to - 92 plastic - encapsulate transistors pcr 100 - 6 ? - 8 silicon planar pnpn thyristor features current - i gt : 200 | a i trms : 0.8 a v drm : pcr100 - 6 o 400 v pcr100 - 8 o 600 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characte ristics ? t amb =25 ?? unless otherwise specified ? p arameter s ymbol t est conditions min max unit on state voltage * v tm i tm =1a 1.7 v gate trigger voltage v gt v ak =7v 0.8 v p eak repetitive forward and reverse blocking voltage pcr100 - 6 pcr100 - 8 v drm and v rrm i drm = 10 | a ,v max =1010 v 400 600 v peak forward or reverse blocking current i drm i rrm v ak = rated v drm or v rrm 10 a holding current i h i hl = 20 ma , av = 7 v 5 ma a2 5 15 a a1 15 30 a a 30 80 a gate trigger cur rent i gt b v ak =7v 80 200 a * f orward current applied for 1 ms maximum duration ? duty cycle ? 1% ? 1 2 3 to ?a 92 1.kathode 2.gate 3 . anode
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
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