1 - 2 ? 2004 ixys all rights reserved 406 fii 30-06d ixys reserves the right to change limits, test conditions and dimensions. features ? npt igbt - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching hiperfred tm diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current isoplus i4-pac tm package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - ul registered e 72873 applications single phaseleg - buck-boost chopper h bridge - power supplies - induction heating - four quadrant dc drives - controlled rectifier three phase bridge - ac drives - controlled rectifier i c25 = 30 a v ces = 600 v v ce(sat) typ. = 1.9 v igbt phaseleg in isoplus i4-pac tm ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys corporation 3540 bassett street, santa clara ca 95054 phone: (408) 982-0700, fax: 408-496-0670 1 5 preliminary data 3 5 4 1 2 igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 600 v v ges 20 v i c25 t c = 25c 30 a i c90 t c = 90c 18 a i cm v ge = 15 v; r g = 47 ? ; t vj = 125c 40 a v cek rbsoa, clamped inductive load; l = 100 h v ces t sc v ce = v ces ; v ge = 15 v; r g = 47 ? ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 100 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 20 a; v ge = 15 v; t vj = 25c 1.9 2.4 v t vj = 125c 2.2 v v ge(th) i c = 0.5 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.6 ma t vj = 125c 0.6 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 50 ns t r 55 ns t d(off) 300 ns t f 30 ns e on 0.92 mj e off 0.68 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 1.1 nf q gon v ce = 300 v; v ge = 15 v; i c = 20 a 65 nc r thjc 1.25 k/w r thjh with heat transfer paste 2.5 k/w inductive load, t vj = 125c v ce = 300 v; i c = 20 a v ge = 15 v; r g = 47 ?
2 - 2 ? 2004 ixys all rights reserved 406 fii 30-06d ixys reserves the right to change limits, test conditions and dimensions. dimensions in mm (1 mm = 0.0394") component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ f c mounting force w ith c lip 20...120 n symbol conditions characteristic values min. typ. max. c p coupling capacity between shorted 40 pf pins and mounting tab in the case d s ,d a pin - pin 1.7 mm d s ,d a pin - backside metal 5.5 mm weight 9g diodes symbol conditions maximum ratings i f25 t c = 25c 30 a i f90 t c = 90c 15 a symbol conditions characteristic values min. typ. max. v f i f = 20 a; t vj = 25c 2.3 2.7 v t vj = 125c 1.6 v i rm i f = 15 a; di f /dt = -400 a/s; t vj = 125c 7 a t rr v r = 300 v; v ge = 0 v 50 ns r thjc (per diode) 2.3 k/w r thjh with heat transfer paste 4.6 k/w
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