vishay siliconix si2305cds document number: 64847 s10-0720-rev. c, 29-mar-10 www.vishay.com 1 p-channel 8 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices ? dc/dc converter product summary v ds (v) r ds(on) ( ) i d (a) d q g (typ.) - 8 0.035 at v gs = - 4.5 v - 5.8 12 nc 0.048 at v gs = - 2.5 v - 5.0 0.065 at v gs = - 1.8 v - 4.3 ordering information: SI2305CDS-T1-GE3 (lead (pb)-free and halogen-free) g to-236 (sot-23) s d top view 2 3 1 * marking code si2305cds (n5)* s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. b. t = 5 s. c. maximum under steady stat e conditions is 175 c/w. d. t c = 25 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 8 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 5.8 a t c = 70 c - 4.7 t a = 25 c - 4.4 a, b t a = 70 c - 3.5 a, b pulsed drain current (10 s pulse width) i dm - 20 continuous source-drain diode current t c = 25 c i s - 1.4 t a = 25 c - 0.8 a, b maximum power dissipation t c = 25 c p d 1.7 w t c = 70 c 1.1 t a = 25 c 0.96 a, b t a = 70 c 0.62 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, c t 5 s r thja 100 130 c/w maximum junction-to-foot (drain) steady state r thjf 60 75
www.vishay.com 2 document number: 64847 s10-0720-rev. c, 29-mar-10 vishay siliconix si2305cds notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 8 v v ds temperature coefficient v ds /t j i d = - 250 a - 9 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 8 v, v gs = 0 v - 1 a v ds = - 8 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 4.4 a 0.028 0.035 v gs = - 2.5 v, i d = - 3.8 a 0.039 0.048 v gs = - 1.8 v, i d = - 2 a 0.053 0.065 forward transconductance a g fs v ds = - 4 v, i d = - 4.4 a 17 s dynamic b input capacitance c iss v ds = - 4 v, v gs = 0 v, f = 1 mhz 960 pf output capacitance c oss 330 reverse transfer capacitance c rss 300 total gate charge q g v ds = - 4 v, v gs = - 8 v, i d = - 4.4 a 20 30 nc total gate charge q g v ds = - 4 v, v gs = - 4.5 v, i d = - 4.4 a 12 18 gate-source charge q gs 1.5 gate-drain charge q gd 3.1 gate resistance r g f = 1 mhz 1 5.1 10.2 tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 1.1 i d ? - 3.5 a, v gen = - 4.5 v, r g = 1 20 30 ns rise time t r 20 30 turn-off delay time t d(off) 40 60 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 1.1 i d ? - 3.5 a, v gen = - 8 v, r g = 1 10 15 rise time t r 10 15 turn-off delay time t d(off) 35 55 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.4 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 3.5 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3.5 a, di/dt = 100 a/s, t j = 25 c 35 55 ns body diode reverse recovery charge q rr 14 25 nc reverse recovery fall time t a 16 ns reverse recovery rise time t b 19
document number: 64847 s10-0720-rev. c, 29-mar-10 www.vishay.com 3 vishay siliconix si2305cds typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds -- drain-to-so u rce v oltage ( v ) i d - drain c u rrent(a) v gs = 5 v thr u 2 v v gs = 1.5 v v gs = 1 v 0.00 0.03 0.06 0.09 0.12 0.15 0 5 10 15 20 r ds(on) - on-resistance ( ) i d -- drain c u rrent (a) v gs =2.5 v v gs = 1. 8 v v gs = 4.5 v 0 2 4 6 8 04 8 12 16 20 i d = 4.4 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 6.4 v v ds =2 v v ds =4 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 v gs - gate-to-so u rce v oltage ( v ) i d - drain c u rrent(a) t c = 125 c t c = - 55 c t c = 25 c c rss 0 300 600 900 1200 1500 1 8 00 0246 8 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d = 4.4 a v gs =2.5 v v gs =4.5 v , 1. 8 v
www.vishay.com 4 document number: 64847 s10-0720-rev. c, 29-mar-10 vishay siliconix si2305cds typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 150 c v sd - so u rce-to-drain v oltage ( v ) i s - so u rce c u rrent (a) t j =25 c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v gs(th) ( v ) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r ds(on) - on-resistance ( ) v gs - gate-to-so u rce v oltage ( v ) i d = 2 a, t j = 25 c i d = 4.4 a, t j = 25 c i d = 2 a, t j = 125 c i d = 4.4 a, t j = 125 c 0 5 10 15 20 25 30 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 0.01 10 i d - drain c u rrent (a) 0.1 t a = 25 c single p u lse limited b yr ds(on) * b v dss limited dc 1 s, 10 s 100 ms 10 ms 1 ms
document number: 64847 s10-0720-rev. c, 29-mar-10 www.vishay.com 5 vishay siliconix si2305cds typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) d - drain c u rrent (a) i power, junction-to-case 0.0 0.4 0. 8 1.2 1.6 2.0 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 64847 s10-0720-rev. c, 29-mar-10 vishay siliconix si2305cds typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64847 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 d u ty cycle = 0.5 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =175 c/ w 3. t jm -- t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted single p u lse normalized thermal transient impedance, junction-to-foot 1 0.1 0.01 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
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