technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1700 v kollektor-dauergleichstrom t c = 80 c i c,nom. 100 a dc-collector current t c = 25 c i c 200 a periodischer kollektor spitzenstrom repetitive peak collctor current t p = 1 ms, t c =80c i crm 200 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 960 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 100 a periodischer spitzenstrom repetitive peak forw. current tp = 1 ms i frm 200 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 2.800 a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 3,4 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 100a, v ge = 15v, t vj = 25 c v ce sat - 2,6 3,2 v collector-emitter saturation voltage i c = 100a, v ge = 15v, t vj = 125 c - 3,1 3,6 v gate-schwellenspannung gate threshold voltage i c = 5m a , v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung g ate charge v ge = -15v ... +15v q g - 1,2 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies - 7 - n f rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,3 - nf kollektor-emitter reststrom v ce = 1700v, v ge = 0v, t vj = 25 c i ces - 0,05 0,2 ma collector-emitter cut-off current v ce = 1700v, v ge = 0v, t vj = 125 c -3 m a gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25 c i ges - - 200 na prepared by: regine mallwitz date of publication: 28.11.2000 approved by: christoph lbke; 28.11.2000 revision: 2 (series) 1(8) BSM100GB170DLC
technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 100a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 15 w , t vj = 25c t d,on - 0,1 - s v ge = 15v, r g = 15 w , t vj = 125c - 0,1 - s anstiegszeit (induktive last) i c = 100a, v ce = 900v rise time (inductive load) v ge = 15v, r g = 15 w , t vj = 25c t r - 0,1 - s v ge = 15v, r g = 15 w , t vj = 125c - 0,1 - s abschaltverz?gerungszeit (ind. last) i c = 100a, v ce = 900v turn off delay time (inductive load) v ge = 15v, r g = 15 w , t vj = 25c t d,off - 0,8 - s v ge = 15v, r g = 15 w , t vj = 125c - 0,9 - s fallzeit (induktive last) i c = 100a, v ce = 900v fall time (inductive load) v ge = 15v, r g = 15 w , t vj = 25c t f - 0,03 - s v ge = 15v, r g = 15 w , t vj = 125c - 0,03 - s einschaltverlustenergie pro puls i c = 100a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 15 w , t vj = 125c, l s = 60nh e on - 50 - mws abschaltverlustenergie pro puls i c = 100a, v ce = 900v, v ge = 15v turn-off energy loss per pulse r g = 15 w , t vj = 125c, l s = 60nh e off - 30 - mws kurzschlu?verhalten t p 10sec, v ge 15v, r g = 15 w sc data t vj 125c, v cc =1000v, v cemax =v ces -l sce di/dt i sc - 400 - a modulinduktivit?t stray inductance module l sce - 30 - nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip pro zweig / per arm r cc'+ee' - 0,6 - m w charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 100a, v ge = 0v, t vj = 25c v f - 2,1 2,5 v forward voltage i f = 100a, v ge = 0v, t vj = 125c - 2,1 2,5 v rckstromspitze i f = 100a, - di f /dt = 1100a/sec peak reverse recovery current v r = 900v, vge = -10v, t vj = 25c i rm -70- a v r = 900v, vge = -10v, t vj = 125c - 105 - a sperrverz?gerungsladung i f = 100a, - di f /dt = 1100a/sec recovered charge v r = 900v, vge = -10v, t vj = 25c q r - 23 - as v r = 900v, vge = -10v, t vj = 125c - 40 - as abschaltenergie pro puls i f = 100a, - di f /dt = 1100a/sec reverse recovery energy v r = 900v, vge = -10v, t vj = 25c e rec - 11 - mws v r = 900v, vge = -10v, t vj = 125c - 20 - mws 2(8) BSM100GB170DLC
technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,13 k/w thermal resistance, junction to case diode/diode, dc - - 0,28 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module d paste 50m / d grease 50m r thck - - 0,012 k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 20 mm luftstrecke clearance 11 mm cti comperative tracking index anzugsdrehmoment f. mech. befestigung max. 5 nm mounting torque anzugsdrehmoment f. elektr. anschlsse terminal connection torque terminals m6 max. 5 nm gewicht weight g 420 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3(8) BSM100GB170DLC
technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc i c [a] v ce [v] i c [a] v ce [v] 0 20 40 60 80 100 120 140 160 180 200 220 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 tj = 25c tj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 20 40 60 80 100 120 140 160 180 200 220 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 19v vge = 15v vge = 13v vge = 11v vge = 9v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4(8) BSM100GB170DLC
technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc i c [a] v ge [v] i f [a] v f [v] 0 20 40 60 80 100 120 140 160 180 200 220 5 6 7 8 9 10 11 12 13 tj = 25c tj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 20 40 60 80 100 120 140 160 180 200 220 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tj = 25c tj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5(8) BSM100GB170DLC
technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc e [mj] i c [a] e [mj] r g [ w ] 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 220 eoff eon erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r gon = r goff =15 w , v ce = 900v, t j = 125c 0 20 40 60 80 100 120 0 10203040506070 eoff eon erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 100a , v ce = 900v , t j = 125c 6(8) BSM100GB170DLC
technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc t [sec] i 1234 r i [k/kw] : igbt 14,51 41,96 62,52 11,01 t i [sec] : igbt 0,0047 0,036 0,061 0,467 r i [k/kw] : diode 52,12 103,26 103,26 21,27 t i [sec] : diode 0,0062 0,0473 0,0473 0,2322 i c [a] v ce [v] z thjc [k / w] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) r g = 15 ohm, t vj = 125c 0 50 100 150 200 0 200 400 600 800 1000 1200 1400 1600 1800 ic,modul ic,chip transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 100 zth:diode zth:igbt 7(8) BSM100GB170DLC
technische information / technical information igbt-module igbt-modules bsm 100 gb 170 dlc 8(8) BSM100GB170DLC
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