application low frequency power amplifier features low saturation voltage v ce(sat) 0.2 v large current capacitance. i c = 2 a table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 80 v collector to emitter voltage v ceo 80 v emitter to base voltage v ebo 6v collector current i c 2a collector peak current ic(peak)* 3 a collector power dissipation p c ** 1 w junction temperature tj 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ms, duty cycle 20 % ** when using the alumina ceramic board (12.5 x 20 x 0.7 mm) note: marking is "ks" attention: this device is very sensitive to electro static discharge. it is recommended to adopt appropriate cautions when handling this transistor. upak 1. base 2. collector 3. emitter 4. collector 1 2 3 4 2SD2533 silicon npn epitaxial
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown v (br)cbo 80 v i c = 10 ?, voltage i e = 0 collector to emitter breakdown v (br)ceo 80 v i c = 1 ma, voltage r be = emitter to base breakdown v (br)ebo 6 vi e = 10 ? voltage i c = 0 collector to base cutoff current i cbo 1 av cb = 65 v, i e = 0 collector to emitter cutoff current i ceo 5 av ce = 65 v, r be = emitter to base cutoff current i ebo 1 av eb = 5 v, i c = 0 dc current transfer ratio h fe 1* 120 300 v ce = 2 v, i c = 0.5 a dc current transfer ratio h fe 2* 40 v ce = 2 v, i c = 1.5 a collector to emitter saturation v ce(sat)* 0.11 0.2 v i c =1 a voltage i b = 50 ma base to emitter saturation v be(sat)* 0.85 1.2 v i c =1 a voltage i b = 50 ma gain bandwidth product f t 160 mhz v ce = 2 v, i c = 50 ma collector output capacitance cob 20 pf v cb = 10 v i e = 0 f = 1 mhz * pulse test 2SD2533
2.0 1.5 1.0 0.5 0 ambient temperature ta (?) collector power dissipation pc (w) 50 100 150 200 maximum power dissipation curve 2.0 1.6 1.2 0.8 0.4 0 collector to emitter voltage v (v) ce collector current i (a) c typical output characteristics ta = 25 ? b i = 0 20 ma 18 ma 16 ma 14 ma 12 ma 10 ma 8 ma 6 ma 4 ma 2 ma 0.4 0.8 1.2 1.6 2.0 2.0 1.6 1.2 0.8 0.4 0 base to emitter voltage v (v) be collector current i (a) c typical transfer characteristics 0.2 0.4 0.6 0.8 1.0 v = 2 v ta = 25 ? ce ta = 75 ? 25 ? ?5 ? collector to emitter voltage v (v) ce collector current i (a) c 0.1 0.3 1 3 10 30 100 area of safe operation 5 2 1 0.2 0.5 0.1 0.02 0.05 0.01 0.005 ta = 25 ? 1 shot pulse 1 ms dc operation ic (peak) i (max) c pw = 10 ms ** when using the alumina ceramic board (12.5 x 20 x 0.7 mm) 2SD2533
10 100 1000 dc current transfer ratio h fe collector current i (a) c dc current transfer ratio vs. collector current 200 500 20 50 0.005 0.01 0.03 0.1 0.3 1 3 5 v = 2 v pulse test ce 75 ? 25 ? ta = ?5 ? collector to emitter saturation voltage ce(sat) v (v) collector current i (a) c base to emitter saturation voltage v (v) be(sat) saturation voltage vs. collector current 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 10 2 5 1 0.2 0.5 0.1 0.02 0.01 0.05 25 ? 75 ? ta = ?5 ? ta = 75 ? 25 ? ?5 ? ce(sat) v pulse test i = 20 i c b be(sat) v 1000 gain bandwidth product f (mhz) t collector current i (a) c gain bandwidth product vs. collector current 100 10 20 50 200 500 0.01 0.02 0.05 0.1 0.2 0.5 1 pulse test v = 6 v ce collector to emitter saturation voltage ce(sat) v (v) 10 1 10 100 1000 collector to emitter saturation voltage vs. base current base current i (ma) b 2 5 20 50 200 500 2 5 1 0.2 0.5 0.1 0.02 0.01 0.05 c i = 2 a 0.5 a 1 a ta = 25 ? pulse test 2SD2533
collector output capacitance cob (pf) collector to base voltage v (v) cb 1 collector output capacitance vs. collector to base voltage 500 200 100 20 50 10 2 5 10 20 50 100 i = 0 f = 1 mhz e 4.5 ?0.1 1.8 max 1.5 ?0.1 0.44 max 0.44 max 0.48 max 0.53 max 1.5 1.5 3.0 2.5 ?0.1 4.25 max 0.8 min 1.0 0.4 hitachi code eiaj jedec upak sc?2 upak 1 23 4 package dimensions unit : mm 2SD2533
package dimensions 4.5 ?0.1 1.8 max 1.5 ?0.1 0.44 max 0.44 max 0.48 max 0.53 max 1.5 1.5 3.0 2.5 ?0.1 4.25 max 0.8 min 1.0 0.4 hitachi code eiaj jedec upak sc?2 upak 1 23 4 unit : mm 2SD2533
|
