features low saturation voltage v ce (sat) ?.3 v large current capacitance i c = ? a table 1 absolute maximum ratings (ta = 25?) item symbol rating unit collector to base voltage v cbo ?0 v collector to emitter voltage v ceo ?0 v emitter to base voltage v ebo ? v collector current i c ? a peak collector current i c(peak) * 3 a collector power dissipation p c ** 1 w junction temperature tj 150 c storage temperature tstg ?5 to +150 c * pw 10 ms, duty cycle 20% ** when using the alumina ceramic board (12.5 20 0.7 mm) upak 1. base 2. collector 3. emitter 1 2 3 table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo ?0 v i c = ?0 ?, i e = 0 collector to emitter breakdown voltage v (br)ceo ?0 v i c = ? ma, r be = emitter to base breakdown voltage v (br)ebo 5v i c = ?0 ?, i e = 0 collector cutoff current i cbo ? ? v cb = ?0 v, i e = 0 collector cutoff current i ceo ? ? v ce = ?0 v, r be = emitter cutoff current i ebo ? ? v eb = ? v, i c = 0 dc current transfer ratio h fe 1 120 300 v ce = ? v, i c = ?.5 a* dc current transfer ratio h fe 2 40? ce = ? v, i c = ?.5 a* collector to emitter saturation voltage v ce(sat) ?.3 v i c = ? a, i b = ?0 ma* base to emitter saturation voltage v be(sat) ?.2 v i c = ? a, i b = ?0 ma* * pulse test ** marking is ?s? preliminary 2SB1519 silicon pnp epitaxial high voltage amplifier
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