w w w w br13003 br13003 br13003 br13003 l l l l d d d d jan 200 9 . rev. 0 . cop yright @winsemi semiconductor co.,ltd.,all rights reserved t02-3 high high high high voltage voltage voltage voltage fast-switching fast-switching fast-switching fast-switching npn npn npn npn power power power power transistor transistor transistor transistor features features features features very high switching speed high voltage capability high voltage capability wide soa built-in freewheeling diode general general general general description description description description this device is designed for high voltage, high speed switching characteristics required such as lighting ystem, switching mode power supply. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol parameter test conditions value units v ces collector-emitter voltage v be = 0 4 00 v v ceo collector-emitter voltage i b = 0 2 00 v v ebo emitter-base voltage i c = 0 9.0 v i c collector current 1. 2 a i cp collector pulse current 3.0 a p c total dissipation at t c = 25 10 w t j operation junction temperature 150 t stg storage temperature - 40 ~ 150 symbol parameter value units r j c thermal resistance junction to case 3.12 /w r j a thermal resistance junction to ambient 89 /w
w w w w br13003 br13003 br13003 br13003 l l l l d d d d 2 / 5 . steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( t c =25 unless otherwise noted) note: note: note: note: pulse test : pulse width 300, duty cycle 2% symbol parameter test conditions value units min typ max b v c b b b b o collector-base breakdown voltage ic=0.5ma,ie=0 4 00 v b v ceo collector-emitter breakdown voltage ic=10ma,ib=0 2 00 - - v v ce(sat) collector-emitter saturation voltage ic= 1 00ma,ib= 2 0ma - - 0.5 v v be(sat) base-emitter saturation voltage ic= 1 00ma,ib= 2 0ma - - 1.0 v i cbo collector-base cutoff current vcb= 35 0v,ie=0ma - - 10 0 a i ceo collector-emitter cutoff current vce= 2 00v,ib=0ma - - 2 0 0 a i ebo emitter - base cutoff current veb=9v,ic=0ma - - 20 a h fe dc current gain vce= 5 v,ic=20 0 ma vce=5v, ic=1ma 10 8 - - 40 - ts t f storage time fall time v cc =250v i c =5 i b i b1 =- i b2 =0.04a 2 - - - 4 0.8 ? vfsd
w w w w br13003 br13003 br13003 br13003 l l l l d d d d 3 / 5 fig. fig. fig. fig. 6 6 6 6 power power power power derating derating derating derating fig. fig. fig. fig. 5 5 5 5 safe safe safe safe operation operation operation operation area area area area fig. fig. fig. fig. 4 4 4 4 vbe vbe vbe vbe saturation saturation saturation saturation voltage voltage voltage voltage fig. fig. fig. fig. 1 1 1 1 dc dc dc dc current current current current gain gain gain gain fig. fig. fig. fig. 3 3 3 3 vce vce vce vce saturation saturation saturation saturation voltage voltage voltage voltage fig. fig. fig. fig. 2 2 2 2 dc dc dc dc current current current current gain gain gain gain
w w w w br13003 br13003 br13003 br13003 l l l l d d d d 4 / 5 . steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.7 fig.7 fig.7 fig.7 resistive resistive resistive resistive load load load load switching switching switching switching test test test test circuit circuit circuit circuit fig.8 fig.8 fig.8 fig.8 inductive inductive inductive inductive load load load load switching switching switching switching & & & & rbsoa rbsoa rbsoa rbsoa test test test test circuit circuit circuit circuit
w w w w br13003 br13003 br13003 br13003 l l l l d d d d 5 / 5 to-126 to-126 to-126 to-126 package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm
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