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mil-prf-19500/423d 10 august 1998 superseding mil-prf-19500/423c 29 august 1997 performance specification sheet semiconductor device, transistor, npn, silicon, switching types 2n5581 and 2n5582, jan, jantx, and jantxv this specification is approved for use by the depart- ment of the air force and is available for use by all departments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the performance requirements for npn silicon switching transistors. three levels of pro duct assurance are provided for each device type as specified in mil-prf-19500. 1.2 physical dimensions. see 3.3 (similar to to-46). 1.3 maximum ratings. p t t a = +25 q c p t t c = +25 q c v cbo v ceo i c t op w 0.5 1/ w 2.0 2/ v dc 75 v dc 50 ma dc 800 q c -55 to +200 1/ derate linearly 2.86 mw/ q c above t a = +25 q c. 2/ derate linearly 11.43 mw/ q c above t c = +25 q c. 1.4 primary electrical characteristics. h fe2 v ce = 10 v dc h fe4 v ce = 10 v dc _ h fe v ce = 20 v dc i c = 20 ma dc cobo v cb = 10 v dc switching i c = 1.0 ma dc i c = 150 ma dc 1/ f = 100 mhz i e = 0 100 khz d f d 1 mhz t on t off t on + t off min max 2n5581 2n5582 35 75 2n5581 2n5582 40 100 120 300 2.5 5.0 pf 8 ns 35 ns 300 ns 18 1/ pulsed (see 4.5.1). amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. this is an advance copy of the dated document. the final document from defense automated printing service may be slightly different in format due to electronic conversion processes. actual technical content will be the same. the documentation and process conversion measures necessary to comply with this revision shall be completed by 10 november 1998. inch-pound beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this docume nt should be addressed to: commander, defense supply center columbus, attn: dscc-vat, 3990 east broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/423d 2 dimensions symbol inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7 ll .500 .750 12.70 19.05 7 lu .016 .019 0.41 0.48 7 l1 --- .050 --- 1.27 7 l2 .250 --- 6.35 --- 7 q --- .040 --- 1.02 4 tl .028 .048 0.71 1.22 4 tw .036 .046 0.91 1.17 3 r --- .007 --- 0.18 10, 11 d 45 q tp 45 q tp 6 notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with ansi y14.5m, diameters are equivalent to i x symbology. 12. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 1. physical dimensions.
mil-prf-19500/423d 3 2. applicable documents 2.1 general. the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not i nclude documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 specifications, standards, and handbooks. the following specifications, standards, and handbooks form a part of this docu ment to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devices, general specification for. standard military mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the standardizatio n document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.3 order of precedence. in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. nothing in this docume nt, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 associated specification. the individual item requirements shall be in accordance with mil-prf-19500, and as specified he rein. 3.2 abbreviations, symbols, and definitions. abbreviations, symbols, and definitions used herein shall be as specified in mil -prf- 19500. 3.3 interface requirements and physical dimensions. the interface requirements and physical dimensions shall be as specified in mil-prf-19500, mil-hdbk-6100, and herein. 3.3.1 lead finish. lead finish shall be solderable as defined in mil-prf-19500, mil-std-750, and herein. where a choice of l ead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4 marking. marking shall be in accordance with mil-prf-19500. 3.5 electrical performance characteristics. unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table i. 3.6 electrical test requirements. the electrical test requirements shall be the subgroups specified in paragraphs 4.4.2 and 4 .4.3. 3.7 qualification. devices furnished under this specification shall be products that are authorized by the qualifying activit y for listing on the applicable qualified products list before contract award (see 4.2 and 6.4 ).
mil-prf-19500/423d 4 4. verification 4.1 classification of inspections. the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4). 4.2 qualification inspection. qualification inspection shall be in accordance with mil-prf-19500. 4.3 screening (jantx and jantxv levels only). screening shall be in accordance with table iv of mil-prf-19500, and as specifi ed herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv measurements of mil-prf-19500) jantx and jantxv levels 3c thermal impedance (see 4.3.2) 9 not applicable 10 48 hours minimum 11 i cbo2 ,h fe4 12 see 4.3.1 80 hours minimum 13 subgroup 2 of table i herein; ' i cbo2 = 100% of initial value or5 na dc, whichever is greater; ' h fe4 = +15% 4.3.1 power burn-in conditions. power burn-in conditions are as follows: t a = room ambient as defined in 4.5 of the general requirements of mil-std-750. v cb = 10 - 30 v dc; p t = 400 mw. note: no heat sink or forced air cooling on the devices shall be permitted. 4.3.2 thermal impedance (z t jx measurements) . the z t jx measurements shall be performed in accordance with mil-std-750, method 3131. a. i m measurement current ---------------------- 5 ma. b. i h forward heating current ------------------- 200 ma (min). c. t h heating time ---------------------------------- 25 - 30 ms. d. t md measurement delay time ---------------- 60 p s max. e. v ce collector-emitter voltage --------------- 10 v dc minimum the maximum limit for z t jx under these test conditions are z t jx (max) = 72 q c/w. 4.4 conformance inspection. conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. if alternate screening is being performed per mil-prf-19500, a sample of screened devices shall be submitted to and pass the requirements of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied per 4.4.2). 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein.
mil-prf-19500/423d 5 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the conditions specified as follows for jan, jantx, and jantxv group b testing herein. electrical measurements (end-points) and delta requirements for jan, jantx, and jantxv shall be after each following step and shall be in accordance with group a, subgroup 2 and 4.5.2 herein. step method condition 1 1039 steady-state life: test condition b, 340 hours, v cb = 10 -30 v dc,t j = 150 q c min. no heat sink or forced- air cooling on the devices shall be permitted. n = 45 devices, c = 0 2 1039 the steady state life test of step 1 shall be extended to 1,000 hrs for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life (non-operating), t = 340 hrs, t a = +200 q c. n = 22, c = 0 1/ separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new assembly lot option is exercised, the failed assembly lot shall be scrapped. 4.4.2.1 group b sample selection. samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group b herein for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the conditions specified for subgroup tes ting in table vii of mil-prf-19500, and as follows. electrical measurements (end points) and delta requirements shall be in accordance with group a, subgroup 2 and 4.5.2 herein. subgroup method condition c2 2036 test condition e. c6 not applicable 4.4.3.1 group c sample selection. samples for subgroups in group c shall be chosen at random from any inspection lot contai ning the intended package type and lead finish procured to the same specification which is submitted to and passes group a tests for conformance inspection. testing of a subgroup using a single device type enclosed in the intended package type shall be conside red as complying with the requirements for that subgroup. 4.4.4 group e inspection. group e inspection shall be performed for qualification or re-qualification only. the tests spe cified in table ii herein must be performed to maintain qualification. 4.5 method of inspection. methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of mil-std-750. 4.5.2 delta requirements. delta requirements shall be as specified below: step inspection mil-std-750 symbol limit unit method conditions 1 collector-base cutoff current 3036 bias condition d, v cb = 60 v dc ' i cb02 1/ 100% of initial value or 8 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed see 4.5.2 ' h fe4 1/ 25% change from initial reading. 1/ devices which exceed the group a limits for this test shall not be accepted.
mil-prf-19500/423d 6 table i. group a inspection inspection 1/ mil-std-750 limit unit method conditions symbol min max subgroup 1 2 / visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 solderability 3/ resistance to solvents 3/, 4 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3/ 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements group a, subgroup 2 bond strength 3/ 2037 precondition t a = +250 q c at t = 24 hrs or t a = 300 q c at t = 2 hrs n = 11 wires, c = 0 subgroup 2 collector to base cutoff current 3036 bias condition d, v cb = 75 v dc i cbo1 10 p a dc emitter to base cutoff current 3061 bias condition d, v eb = 6 v dc i ebo1 10 p a dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 10 ma dc; pulsed (see 4.5.1) v (br)ceo 50 v dc collector to base cutoff current 3036 bias condition d; v cb = 60 v dc i cbo2 10 na dc emitter to base cutoff current 3061 bias condition d; v eb = 4 v dc i ebo2 10 na dc forward-current transfer ratio 3076 v ce = 10 v dc; i c = 0.1 ma dc h fe1 2n5581 30 2n5582 50 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 1.0 ma dc h fe2 2n5581 35 2n5582 75 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc h fe3 2n5581 40 2n5582 100 see footnotes at end of table.
mil-prf-19500/423d 7 table i. group a inspection inspection 1/ mil-std-750 limit unit method conditions symbol min max subgroup 2 - continued forward-current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed(see 4.5.1) h fe4 2n5581 40 120 2n5582 100 300 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 500 ma dc; pulsed see 4.5.1 h fe5 2n5581 20 2n5582 collector-emitter saturation voltage 3071 i c = 150 ma dc; i b = 15 ma dc pulsed (see 4.5.1) v ce(sat)1 30 0.3 v dc collector-emitter saturation voltage 3071 i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) v ce(sat)2 1.0 v dc base-emitter saturation voltage 3066 test condition a; i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v be(sat)1 0.6 1.2 v dc base-emitter saturation voltage 3066 test condition a; i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) v be(sat)2 2.0 v dc subgroup 3 high temperature operation t a = +150 q c collector to base cutoff current 3036 bias condition d;v cb = 60 v dc i cbo3 10 p a dc low temperature operation t a = -55 q c forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc h fe6 2n5581 15 2n5582 35 subgroup 4 small-signal short- circuit forward current transfer ratio 3206 v ce = 10 v dc; i c = 1 ma dc; f = 1 khz h fe 2n5581 30 2n5582 50 magnitude of small-signal short- circuit forward current transfer ratio 3306 v ce = 20 v dc; i c = 50 ma dc; f = 100 mhz /h fe / 2.5 open circuit output capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz < f < 1 mhz c obo 8pf see footnotes at end of table.
mil-prf-19500/423d 8 table i. group a inspection - continued inspection 1/ mil-std-750 limit unit method conditions symbol min max subgroup 4 - continued input capacitance (output open- circuited) turn-on time 3240 v eb = 0.5 v dc; i c = 0; 100 khz < f < 1 mhz (see figure 2) c ibo t on 25 35 pf ns turn-off time (see figure 3) t off 300 ns pulse response (see figure 4) t on + t off 18 ns subgroups 5 and 6 not required subgroup 7 decap internal visual (design verification) 2075 n = 1 device, c = 0 1/ for sampling plan see mil-prf-19500. 2/ for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3/ separate samples may be used. 4/ not required for laser marked devices.
mil-prf-19500/423d 9 table ii. group e inspection (all quality levels) - for qualification only inspection mil-std-750 qualification method conditions subgroup 1 temperature cycling (air to air) hermetic seal fine leak gross leak electrical measurements subgroup 2 intermittent life electrical measurements subgroup 3 not applicable subgroup 4 not applicable subgroup 5 not applicable 1051 1071 1037 test condition c, 500 cycles see group a, subgroup 2 and 4.5.3 herein. intermittent operation life: v cb = 10 v dc , 6,000 cycles, ' t j t +100 q c; forced air cooling allowed on cooling cycle only. see group a, subgroup 2 and 4.5.2 herein. 12 devices c = 0 45 devices c = 0
mil-prf-19500/423d 10 notes: 1. the rise time (t r ) and fall time (t f ) of the applied pulse shall be d 2.0 ns; duty cycle d 2 percent; generator source impedance shall be 50 ohms. 2. output sampling oscilloscope: z in t 100 k : ; c in d 12 pf; rise time d 5.0 ns. figure 2. saturated turn-on switching time test circuit.
mil-prf-19500/423d 11 notes: 1. the rise time (t r ) and fall time (t f ) of the applied pulse shall be d 2.0 ns; duty cycle d 2 percent; generator source impedance shall be 50 ohms. 2. output sampling oscilloscope: z in t 100 k : ; c in d 12 pf; rise time d 0.2 ns. figure 3. saturated turn-off switching time test circuit.
mil-prf-19500/423d 12 notes: 1. the rise time (t r ) and fall time (t f ) of the applied pulse shall be d 2.0 ns; duty cycle d 2 percent; generator source impedance shall be 50 ohms. 2. output sampling oscilloscope: z in t 100 k : ; c in d 12 pf; rise time d 0.2 ns. figure 4. nonsaturated turn-on switching time test circuit.
mil-prf-19500/423d 13 5. packaging 5.1 packaging. for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging act ivity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contact ing the responsible packaging activity. 5.2 marking. unless otherwise specified (see 6.2), marking shall be in accordance with mil-std-129. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes. the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements. acquisition documents should specify the following: a. lead finish (see 3.3.1). b. type designation and product assurance level. 6.3 changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the p revious issue due to the extensiveness of the changes. 6.4 qualification. with respect to products requiring qualification, awards will be made only for products which are, at th e time of award of contract, qualified for inclusion in qualified products list qpl-19500 whether or not such products have actually been so li sted by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the prod ucts that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contr acts or purchase orders for the products covered by this specification. information pertaining to qualification of products may be obta ined from defense supply center columbus, dscc-vqe, columbus, oh 43216. custodian: preparing activity: army - cr dla - cc navy - ec air force - 17 (project 5961-2048-03) review activities: air force - 13, 19, 85, 90
mil-prf-19500/423d 14 standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on cu rrent contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced doc ument(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/423d 2. document date 10 august 1998 3. document title semiconductor device, transistor, npn, silicon, switching types 2n5581 and 2n5582, jan, jantx, and jantxv 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vat columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense quality and standardization office 5203 leesburg pike, suite 1403, falls church, va 22041-3466 telephone (703) 756-2340 dsn 289-2340 dd form 1426, oct 89 previous editions are obsolete

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