vishay siliconix 2n7002e document number: 70860 s-83053-rev. e, 29-dec-08 www.vishay.com 1 n-channel 60-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? low on-resistance: 3 ? low threshold: 2 v (typ.) ? low input capacitance: 25 pf ? fast switching speed: 7.5 ns ? low input and output leakage benefits ? low offset voltage ? low-voltage operation ? easily driven without buffer ? high-speed circuits ? low error voltage applications ? direct logic-level interface: ttl/cmos ? drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. ? battery oper ated systems ? solid-state relays product summary v ds (v) r ds(on) ( )i d (ma) 60 3 at v gs = 10 v 240 g s d top v ie w 2 3 to-236 (sot-23) 1 marking code: 7e w l e = part nu m b er code for 2 n 7002e w = w eek code l = lot tracea b ility ordering information: 2 n 7002e-t1-e3 (lead (p b )-free) 2 n 7002e-t1-ge3 (lead (p b )-free and halogen-free) notes: a. pulse width limited by maximum junction temperature. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t a = 25 c i d 240 ma t a = 70 c 190 pulsed drain current a i dm 1300 power dissipation t a = 25 c p d 0.35 w t a = 70 c 0.22 thermal resistance, junction-to-ambient r thja 357 c/w operating junction and storage temperature range t j, t stg - 55 to 150 c
www.vishay.com 2 document number: 70860 s-83053-rev. e, 29-dec-08 vishay siliconix 2n7002e notes: a. for design aid only, not subject to production testing. b. pulse test: pulse width 300 s duty cycle 2 %. c. switching time is essentially independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t a = 25 c, unless otherwise noted parameter symbol test conditions limits unit min. typ. a max. static drain-source breakdown voltage v ds v gs = 0 v, i d = 10 a 60 68 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 122.5 gate-body leakage i gss v ds = 0 v, v gs = 15 v 10 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v, v gs = 0 v , t j = 125 c 500 on-state drain current b i d(on) v gs = 10 v, v ds = 7.5 v 800 1300 ma v gs = 4.5 v, v ds = 10 v 500 700 drain-source on-resistance b r ds(on) v gs = 10 v, i d = 250 ma 1.2 3 v gs = 4.5 v, i d = 200 ma 1.8 4 forward transconductance b g fs v ds = 15 v, i d = 200 ma 600 ms diode forward voltage v sd i s = 200 ma, v gs = 0 v 0.85 1.2 v dynamic a total gate charge q g v ds = 10 v, v gs = 4.5 v i d ? 250 ma 0.4 0.6 nc gate-source charge q gs 0.06 gate-drain charge q gd 0.06 input capacitance c iss v ds = 5 v, v gs = 0 v, f = 1 mhz 21 pf output capacitance c oss 7 reverse transfer capacitance c rss 2.5 switching a, c tu r n - o n t i m e t d(on) v dd = 10 v, r l = 40 i d ? 250 ma, v gen = 10 v, r g = 10 13 20 ns turn-off time t d(off) 18 25
document number: 70860 s-83053-rev. e, 29-dec-08 www.vishay.com 3 vishay siliconix 2n7002e typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. gate-source voltage on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0. 8 1.0 012345 v ds - drain-to-so u rce v oltage ( v ) v gs = 10, 9, 8 , 7, 6 v 3 v 5 v 4 v i d - drain c u rrent (a) v gs - gate-to-so u rce v oltage ( v ) 0 1 2 3 4 0246 8 10 i d at 250 ma i d at 75 ma r ds(on) - on-resistance ( ) t j - j u nction temperat u re (c) 0.0 0.4 0. 8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v at 250 ma r ds(on) - on-resistance ( n ormalized) v gs = 4.5 v at 200 ma transfer characteristics on-resistance vs. drain current threshold voltage variance over temperature 0.0 0.3 0.6 0.9 1.2 01234567 v gs - gate-to-so u rce v oltage ( v ) t j = - 55 c 125 c 25 c i d - drain c u rrent (a) i d - drain c u rrent (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.2 0.4 0.6 0. 8 1.0 v gs = 4.5 v r ds(on) - on-resistance ( ) v gs = 10 v - 0. 8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - j u nction temperat u re (c) v gs(th) - v ariance ( v )
www.vishay.com 4 document number: 70860 s-83053-rev. e, 29-dec-08 vishay siliconix 2n7002e typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70860 . capacitance source-drain diode forward voltage v ds - drain-to-so u rce v oltage ( v ) 0 8 16 24 32 40 0 5 10 15 20 25 c rss c oss c iss c - capacitance (pf) v sd - so u rce-to-drain v oltage ( v ) 0.1 2 1 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 8 5 c 25 c - 55 c i s - so u rce c u rrent (a) gate charge q g - total gate charge (nc) 0.0 0.2 0.4 0.6 0. 8 1.0 0.0 0.1 0.2 0.3 0.4 0.5 v ds = 30 v i d = 0.25 a v gs - gate-to-so u rce v oltage ( v )
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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