uf3a ? u f 3k 1 o f 2 ? 20 00 w on- t op e l e c t ron i cs uf3a ? uf3k 3.0a surface mount ultra fast rectifier features ! glass passivated die construction ! ideally suited for automatic assembly b ! low forward voltage drop, high efficiency ! surge overload rating to 100a peak d ! low power loss a ! ultra-fast recovery time f ! plastic case material has ul flammability classification rating 94v-o c h g e mechanical data ! case: molded plastic ! terminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! weight: 0.21 grams (approx.) maximum ratings and electrical characteristics @t a =25c unless otherwise specified characteristic symbol uf3a uf3b uf3d uf3g uf3j uf3k unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 v rms reverse voltage v r(rms) 35 70 140 280 420 560 v average rectified output current @t l = 75c i o 3.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) @t a = 55c i fsm 100 a forward voltage @i f = 3.0a v fm 1.0 1 .4 1.7 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 10 500 a reverse recovery time (note 1) t rr 50 100 ns typical junction capacitance (note 2) c j 75 50 pf typical thermal resistance (note 3) r jl 15 k/w operating and storage temperature range t j, t stg -50 to +150 c note: 1. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a, 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 land area. wte power semiconductors smc/do-214ab dim min max a 5.59 6.22 b 6.60 7.11 c 2.75 3.25 d 0.152 0.305 e 7.75 8.13 f 2.00 2.62 g 0.051 0.203 h 0.76 1.27 all dimensions in mm
u f 3 a ? u f 3 k 2 of 2 ? 20 0 0 w on- t op e l e c t ron i cs 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under test t rr se t tim e bas e fo r 10 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 5 0 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 100 1000 0 20 40 60 8 0 100 120 140 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics t = 100 c j t = 25 c j 0.01 0.1 1.0 10 0 0.4 0.8 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f t - 25 c j pulse width = 300 s m 1.2 1.6 2.0 u f 3 a - u f 3 d u f 3 g u f 3 j - u f 3 k 0 2 5 5 0 7 5 10 0 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 forward surge current derating curve single half sine-wave (jedec method) t = 150 c j 0 1 . 5 3 .0 25 50 75 100 125 150 i average forward current (a) (av), t , l e a d t emper a tur e ( c ) fig. 1 forward current derating curve l
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